Abstract: Stabilization of energy sensitive semiconductive devices by forming initial electrodes which are exposed through an overlying layer of semiconductor, dipping the exposed first electrode and the semiconductor layer in colloidal solutions, or well stirred suspensions of specified metal hydroxides, such as those of nickel, chromium, cobalt or related metals, followed by rinsing the non-sensitive side of the device in de-ionized water. After air drying, the deposition of an overlying second electrode is carried out by a metallization technique. The device is then heated in air, at 150.degree. C. for four hours.

Abstract: Stabilization of energy sensitive semiconductive devices by forming initial electrodes which are exposed through an overlying layer of semiconductor, dipping the exposed electrodes in solutions containing specified chemicals, such as metallic ion solutions of nickel, cobalt, chromium and related metals, followed by rinsing, drying and the final deposition of an overlying electrode by metallization.