Patents by Inventor Kae KUMAGAI

Kae KUMAGAI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220093406
    Abstract: A method for processing a substrate includes a step of providing a substrate and a first step. In the step of providing a substrate, a substrate having a first film and a second film formed on the first film and having a pattern formed thereon is provided. In the first step, a protective film is formed on a side wall of the first film by a product generated by sputtering of the second film while a first processing gas is turned into plasma and the first film is etched simultaneously with the sputtering of the second film.
    Type: Application
    Filed: December 2, 2021
    Publication date: March 24, 2022
    Applicant: Tokyo Electron Limited
    Inventors: Yuki IIJIMA, Toru HISAMATSU, Kae KUMAGAI
  • Patent number: 11201062
    Abstract: A method for processing a substrate includes a step of providing a substrate and a first step. In the step of providing a substrate, a substrate having a first film and a second film formed on the first film and having a pattern formed thereon is provided. In the first step, a protective film is formed on a side wall of the first film by a product generated by sputtering of the second film while a first processing gas is turned into plasma and the first film is etched simultaneously with the sputtering of the second film.
    Type: Grant
    Filed: June 24, 2020
    Date of Patent: December 14, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Yuki Iijima, Toru Hisamatsu, Kae Kumagai
  • Publication number: 20210375633
    Abstract: A substrate processing apparatus performs a method of etching a substrate that includes etching the substrate to form a first portion of a recess in the substrate, the first portion of the recess including a bottom surface and a sidewall. The method also includes forming an ammonium fluorosilicate (AFS) layer in or on the sidewall, and then etching the bottom surface to form a second portion of the recess. The etching the bottom surface is performed while maintaining protection of the sidewall with the AFS layer.
    Type: Application
    Filed: May 27, 2020
    Publication date: December 2, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Ryutaro SUDA, Kae KUMAGAI, Maju TOMURA
  • Patent number: 11171012
    Abstract: A substrate processing apparatus performs a method of etching a substrate that includes etching the substrate to form a first portion of a recess in the substrate, the first portion of the recess including a bottom surface and a sidewall. The method also includes forming an ammonium fluorosilicate (AFS) layer in or on the sidewall, and then etching the bottom surface to form a second portion of the recess. The etching the bottom surface is performed while maintaining protection of the sidewall with the AFS layer.
    Type: Grant
    Filed: May 27, 2020
    Date of Patent: November 9, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Ryutaro Suda, Kae Kumagai, Maju Tomura
  • Publication number: 20210143004
    Abstract: A method for processing a substrate includes: (a) exposing a substrate with a pattern formed on a surface thereof to a first reactive species in a chamber, thereby adsorbing the first reactive species onto the surface of the substrate; (b) exposing the substrate to plasma formed by a second reactive species in the chamber, thereby forming a film on the surface of the substrate; and (c) repeating a processing including (a) and (b) two or more times while changing a residence amount of the first reactive species at a time of starting (b).
    Type: Application
    Filed: November 13, 2020
    Publication date: May 13, 2021
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Kae KUMAGAI, Toru HISAMATSU, Masanobu HONDA
  • Publication number: 20200411325
    Abstract: A method for processing a substrate includes a step of providing a substrate and a first step. In the step of providing a substrate, a substrate having a first film and a second film formed on the first film and having a pattern formed thereon is provided. In the first step, a protective film is formed on a side wall of the first film by a product generated by sputtering of the second film while a first processing gas is turned into plasma and the first film is etched simultaneously with the sputtering of the second film.
    Type: Application
    Filed: June 24, 2020
    Publication date: December 31, 2020
    Applicant: Tokyo Electron Limited
    Inventors: Yuki IIJIMA, Toru HISAMATSU, Kae KUMAGAI