Patents by Inventor Kae Lee

Kae Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20060097297
    Abstract: A CMOS image sensor and fabricating method thereof enhances a light-receiving capability of an image sensor by preventing poor light-refraction characteristics at the peripheral part of a microlens. The CMOS image sensor includes at least one microlens formed by anistropic etching to have a focusing centerline, a central lens portion, and a peripheral lens portion, wherein the focusing centerline passes through the central lens portion and wherein the peripheral lens portion surrounds the central lens portion. The central lens portion has a first convex curvature based on a first radius and the peripheral lens portion has second convex curvature based on a second radius, wherein the second radius is greater than the first radius.
    Type: Application
    Filed: November 8, 2005
    Publication date: May 11, 2006
    Inventor: Kae Lee
  • Publication number: 20050142759
    Abstract: Methods for fabricating semiconductor devices are disclosed. An illustrated method includes: etching a semiconductor substrate to form a trench, forming an ONO film on the semiconductor substrate, removing the ONO film from the upper surface of the semiconductor substrate while leaving the ONO film on an inside wall surface of the trench, forming a gate oxide film on the semiconductor substrate adjacent the ONO film, depositing polysilicon on the semiconductor substrate, and selectively removing the polysilicon to form SONOS gate electrodes on the gate oxide film and the trench, respectively. Because opposite sides of the polysilicon gate electrode are covered with an ONO layer, the size of the nitride film may be substantially maximized.
    Type: Application
    Filed: December 29, 2004
    Publication date: June 30, 2005
    Inventor: Kae Lee
  • Publication number: 20050142801
    Abstract: A method of manufacturing a semiconductor device including forming an ONO film on a semiconductor substrate and a hard mask layer on the ONO film, forming a trench by etching the hard mask layer and the ONO film on a field region of the semiconductor substrate using a photo etch process and etching the field region of the semiconductor substrate, and forming a device separator at the trench. The method also includes exposing the ONO film by removing the hard mask layer on the ONO film, and leaving the ONO film only on a prospective SONOS gate in a cell region of the semiconductor substrate and removing the ONO film the remainder region thereof. The method further includes forming a gate oxide film on the semiconductor substrate at an outside of the ONO film, and forming a gate electrode on the gate oxide film and the ONO film, respectively.
    Type: Application
    Filed: December 30, 2004
    Publication date: June 30, 2005
    Applicant: DongbuAnam Semiconductor Inc.
    Inventor: Kae Lee