Abstract: A method for reducing contamination in immersion lithography includes retaining a semiconductor wafer on a support surface of a wafer chuck, the wafer chuck having a gap therein, the gap located adjacent an outer edge of the wafer, and the gap containing a volume of immersion lithography fluid therein; and providing a fluid circulation path within the wafer chuck so as to facilitate the radial outward movement of the immersion lithography fluid in the gap, thereby maintaining a meniscus of the immersion lithography fluid at a selected height with respect to a top surface of the semiconductor wafer.

Abstract: A wafer chuck assembly includes a first chuck section configured to hold a semiconductor wafer on a support surface thereof, and a second chuck section removably attached to the first chuck section. The first chuck section has a gap therein, the gap located adjacent an outer edge of the wafer, and the gap containing a volume of immersion lithography fluid therein. A fluid circulation path is configured within the first chuck section so as to facilitate the radial outward movement of the immersion lithography fluid in the gap, thereby maintaining a meniscus of the immersion lithography fluid at a selected height with respect to a top surface of the semiconductor wafer.

Abstract: A method for reducing contamination in immersion lithography includes retaining a semiconductor wafer on a support surface of a wafer chuck, the wafer chuck having a gap therein, the gap located adjacent an outer edge of the wafer, and the gap containing a volume of immersion lithography fluid therein; and providing a fluid circulation path within the wafer chuck so as to facilitate the radial outward movement of the immersion lithography fluid in the gap, thereby maintaining a meniscus of the immersion lithography fluid at a selected height with respect to a top surface of the semiconductor wafer.

Abstract: A wafer chuck assembly includes a first chuck section configured to hold a semiconductor wafer on a support surface thereof, and a second chuck section removably attached to the first chuck section. The first chuck section has a gap therein, the gap located adjacent an outer edge of the wafer, and the gap containing a volume of immersion lithography fluid therein. A fluid circulation path is configured within the first chuck section so as to facilitate the radial outward movement of the immersion lithography fluid in the gap, thereby maintaining a meniscus of the immersion lithography fluid at a selected height with respect to a top surface of the semiconductor wafer.