Abstract: Provided herein are alloy systems with enhanced Seebeck coefficient and processes for making the same. An alloy system and process for improving the Seebeck coefficient of such an alloy system is disclosed. The process relates to an innovative methodology to preserve Te stoichiometry in electroplated thin films under annealing at high temperatures.

Abstract: A thermal interface material (1) comprises a bulk polymer (2) within which is embedded sub-micron (c. 200 to 220 nm) composite material wires (3) having Ag and carbon nanotubes (“CNTs”) 4. The CNTs are embedded in the axial direction and have diameters in the range of 9.5 to 10 nm and have a length of about 0.7 ?m. In general the pore diameter can be in the range of 40 to 1200 nm. The material (1) has particularly good thermal conductivity because the wires (3) give excellent directionality to the nanotubes (4)—providing very low resistance heat transfer paths. The TIM is best suited for use between semiconductor devices (e.g. power semiconductor chip) and any type of thermal management systems for efficient removal of heat from the device.

Abstract: A thermal interface material (1) comprises a bulk polymer (2) within which is embedded sub-micron (c. 200 to 220 nm) composite material wires (3) having Ag and carbon nanotubes (“CNTs”) 4. The CNTs are embedded in the axial direction and have diameters in the range of 9.5 to 10 nm and have a length of about 0.7 ?m. In general the pore diameter can be in the range of 40 to 1200 nm. The material (1) has particularly good thermal conductivity because the wires (3) give excellent directionality to the nanotubes (4)—providing very low resistance heat transfer paths. The TIM is best suited for use between semiconductor devices (e.g. power semiconductor chip) and any type of thermal management systems for efficient removal of heat from the device.