Patents by Inventor Kahn C. Wu

Kahn C. Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Barometric vent stack-up design to improve water performance
    Patent number: 11956611
    Abstract: A portable electronic device can include a housing at least partially defining an internal volume. The device can include a venting module including a membrane, a porous member, and a support structure. The membrane and porous member can define a fluid path extending a width of the porous member and placing the internal volume in fluid communication with an ambient environment adjacent the housing. The support structure can be coupled to the porous member.
    Type: Grant
    Filed: July 20, 2021
    Date of Patent: April 9, 2024
    Assignee: APPLE INC.
    Inventors: Jiahui Liang, Kahn C. Wu, Stephen L. Frey
  • BAROMETRIC VENT STACK-UP DESIGN TO IMPROVE WATER PERFORMANCE
    Publication number: 20220095055
    Abstract: A portable electronic device can include a housing at least partially defining an internal volume. The device can include a venting module including a membrane, a porous member, and a support structure. The membrane and porous member can define a fluid path extending a width of the porous member and placing the internal volume in fluid communication with an ambient environment adjacent the housing. The support structure can be coupled to the porous member.
    Type: Application
    Filed: July 20, 2021
    Publication date: March 24, 2022
    Inventors: Jiahui Liang, Kahn C. Wu, Stephen L. Frey
  • Method for forming diffusion regions in a silicon substrate
    Patent number: 9018033
    Abstract: A method of manufacturing solar cells is disclosed. The method comprises depositing an etch-resistant dopant material on a silicon substrate, the etch-resistant dopant material comprising a dopant source, forming a cross-linked matrix in the etch-resistant dopant material using a non-thermal cure of the etch-resistant dopant material, and heating the silicon substrate and the etch-resistant dopant material to a temperature sufficient to cause the dopant source to diffuse into the silicon substrate.
    Type: Grant
    Filed: October 23, 2013
    Date of Patent: April 28, 2015
    Assignee: SunPower Corporation
    Inventors: Kahn C. Wu, Steven M. Kraft, Paul Loscutoff, Steven Edward Molesa
  • METHOD FOR FORMING DIFFUSION REGIONS IN A SILICON SUBSTRATE
    Publication number: 20140048133
    Abstract: A method of manufacturing solar cells is disclosed. The method comprises depositing an etch-resistant dopant material on a silicon substrate, the etch-resistant dopant material comprising a dopant source, forming a cross-linked matrix in the etch-resistant dopant material using a non-thermal cure of the etch-resistant dopant material, and heating the silicon substrate and the etch-resistant dopant material to a temperature sufficient to cause the dopant source to diffuse into the silicon substrate.
    Type: Application
    Filed: October 23, 2013
    Publication date: February 20, 2014
    Inventors: Kahn C. Wu, Steven M. Kraft, Paul Loscutoff, Steven Edward Molesa
  • Method for forming diffusion regions in a silicon substrate
    Patent number: 8586397
    Abstract: A method of manufacturing solar cells is disclosed. The method comprises depositing an etch-resistant dopant material on a silicon substrate, the etch-resistant dopant material comprising a dopant source, forming a cross-linked matrix in the etch-resistant dopant material using a non-thermal cure of the etch-resistant dopant material, and heating the silicon substrate and the etch-resistant dopant material to a temperature sufficient to cause the dopant source to diffuse into the silicon substrate.
    Type: Grant
    Filed: September 30, 2011
    Date of Patent: November 19, 2013
    Assignee: SunPower Corporation
    Inventors: Kahn C. Wu, Steven M. Kraft, Paul Loscutoff, Steven Edward Molesa
  • METHOD FOR FORMING DIFFUSION REGIONS IN A SILICON SUBSTRATE
    Publication number: 20130081687
    Abstract: A method of manufacturing solar cells is disclosed. The method comprises depositing an etch-resistant dopant material on a silicon substrate, the etch-resistant dopant material comprising a dopant source, forming a cross-linked matrix in the etch-resistant dopant material using a non-thermal cure of the etch-resistant dopant material, and heating the silicon substrate and the etch-resistant dopant material to a temperature sufficient to cause the dopant source to diffuse into the silicon substrate.
    Type: Application
    Filed: September 30, 2011
    Publication date: April 4, 2013
    Inventors: Kahn C. Wu, Steven M. Kraft, Paul Loscutoff, Steven Edward Molesa