Patents by Inventor Kai-Alexander Schreiber
Kai-Alexander Schreiber has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9708182Abstract: A method for producing at least one cavity within a semiconductor substrate includes dry etching the semiconductor substrate from a surface of the semiconductor substrate at at least one intended cavity location in order to obtain at least one provisional cavity. The method includes depositing a protective material with regard to a subsequent wet-etching process at the surface of the semiconductor substrate and at cavity surfaces of the at least one provisional cavity. Furthermore, the method includes removing the protective material at least at a section of a bottom of the at least one provisional cavity in order to expose the semiconductor substrate. This is followed by electrochemically etching the semiconductor substrate at the exposed section of the bottom of the at least one provisional cavity. A method for producing a micromechanical sensor system in which this type of cavity formation is used and a corresponding MEMS are also disclosed.Type: GrantFiled: August 28, 2015Date of Patent: July 18, 2017Assignee: Infineon Technologies AGInventors: Andreas Behrendt, Kai-Alexander Schreiber, Sokratis Sgouridis, Martin Zgaga, Bernhard Winkler
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Publication number: 20160332873Abstract: Methods, apparatuses and devices are described where a main wafer is irreversibly bonded to a carrier wafer and thinned to reduce a thickness of the main wafer, for example down to a thickness of 300 ?m or below.Type: ApplicationFiled: July 29, 2016Publication date: November 17, 2016Inventors: Andre Brockmeier, Christian Kalousek, Katharina Maier, Peter Zorn, Kai-Alexander Schreiber, Francesco Solazzi
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Patent number: 9428381Abstract: Methods, apparatuses and devices are described where a main wafer is irreversibly bonded to a carrier wafer and thinned to reduce a thickness of the main wafer, for example down to a thickness of 300 ?m or below.Type: GrantFiled: March 3, 2014Date of Patent: August 30, 2016Assignee: Infineon Technologies AGInventors: Andre Brockmeier, Christian Griessler, Katharina Maier, Peter Zorn, Kai-Alexander Schreiber, Francesco Solazzi
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Publication number: 20150368097Abstract: A method for producing at least one cavity within a semiconductor substrate includes dry etching the semiconductor substrate from a surface of the semiconductor substrate at at least one intended cavity location in order to obtain at least one provisional cavity. The method includes depositing a protective material with regard to a subsequent wet-etching process at the surface of the semiconductor substrate and at cavity surfaces of the at least one provisional cavity. Furthermore, the method includes removing the protective material at least at a section of a bottom of the at least one provisional cavity in order to expose the semiconductor substrate. This is followed by electrochemically etching the semiconductor substrate at the exposed section of the bottom of the at least one provisional cavity. A method for producing a micromechanical sensor system in which this type of cavity formation is used and a corresponding MEMS are also disclosed.Type: ApplicationFiled: August 28, 2015Publication date: December 24, 2015Inventors: Andreas Behrendt, Kai-Alexander Schreiber, Sokratis Sgouridis, Martin Zgaga, Bernhard Winkler
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Patent number: 9139427Abstract: A method for producing at least one cavity within a semiconductor substrate includes dry etching the semiconductor substrate from a surface of the semiconductor substrate at at least one intended cavity location in order to obtain at least one provisional cavity. The method includes depositing a protective material with regard to a subsequent wet-etching process at the surface of the semiconductor substrate and at cavity surfaces of the at least one provisional cavity. Furthermore, the method includes removing the protective material at least at a section of a bottom of the at least one provisional cavity in order to expose the semiconductor substrate. This is followed by electrochemically etching the semiconductor substrate at the exposed section of the bottom of the at least one provisional cavity. A method for producing a micromechanical sensor system in which this type of cavity formation is used and a corresponding MEMS are also disclosed.Type: GrantFiled: April 17, 2013Date of Patent: September 22, 2015Assignee: Infineon Technologies AGInventors: Andreas Behrendt, Kai-Alexander Schreiber, Sokratis Sgouridis, Martin Zgaga, Bernhard Winkler
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Publication number: 20150246809Abstract: Methods, apparatuses and devices are described where a main wafer is irreversibly bonded to a carrier wafer and thinned to reduce a thickness of the main wafer, for example down to a thickness of 300 ?m or below.Type: ApplicationFiled: March 3, 2014Publication date: September 3, 2015Applicant: Infineon Technologies AGInventors: Andre Brockmeier, Christian Griessler, Katharina Maier, Peter Zorn, Kai-Alexander Schreiber, Francesco Solazzi
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Publication number: 20130270658Abstract: A method for producing at least one cavity within a semiconductor substrate includes dry etching the semiconductor substrate from a surface of the semiconductor substrate at at least one intended cavity location in order to obtain at least one provisional cavity. The method includes depositing a protective material with regard to a subsequent wet-etching process at the surface of the semiconductor substrate and at cavity surfaces of the at least one provisional cavity. Furthermore, the method includes removing the protective material at least at a section of a bottom of the at least one provisional cavity in order to expose the semiconductor substrate. This is followed by electrochemically etching the semiconductor substrate at the exposed section of the bottom of the at least one provisional cavity. A method for producing a micromechanical sensor system in which this type of cavity formation is used and a corresponding MEMS are also disclosed.Type: ApplicationFiled: April 17, 2013Publication date: October 17, 2013Applicant: Infineon Technologies AGInventors: Andreas Behrendt, Kai-Alexander Schreiber, Sokratis Sgouridis, Martin Zgaga, Bernhard Winkler
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Patent number: 7834427Abstract: An integrated circuit including a semiconductor arrangement, a power semiconductor component and an associated production method is disclosed. One embodiment includes a carrier substrate, a first interconnect layer, formed on the carrier substrate and has at least one cutout, an insulating filling layer, formed on the first interconnect layer and the carrier substrate and fills at least one cutout, an SiON layer, formed on the filling layer, and a second interconnect layer, formed over the SiON layer.Type: GrantFiled: February 28, 2007Date of Patent: November 16, 2010Assignee: Infineon Technologies Austria AGInventors: Thomas Detzel, Hubert Maier, Kai-Alexander Schreiber, Stefan Woehlert, Uwe Hoeckele
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Publication number: 20080179669Abstract: An integrated circuit including a semiconductor arrangement, a power semiconductor component and an associated production method is disclosed. One embodiment includes a carrier substrate, a first interconnect layer, formed on the carrier substrate and has at least one cutout, an insulating filling layer, formed on the first interconnect layer and the carrier substrate and fills at least one cutout, an SiON layer, formed on the filling layer, and a second interconnect layer, formed over the SiON layer.Type: ApplicationFiled: February 28, 2007Publication date: July 31, 2008Applicant: INFINEON TECHNOLOGIES AUSTRIA AGInventors: Thomas Detzel, Hubert Maier, Kai-Alexander Schreiber, Stefan Woehlert, Uwe Hoeckele
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Publication number: 20050279382Abstract: A method for cleaning silicon-containing deposits in process chamber is described. Fluorine-containing compounds and additional compounds are used for the cleaning. The deposits are removed using a cleaning gas contains fluorine-containing compounds, at least 50% of which have more than one carbon atom and are C4F8 or C2F6 molecules, and additional compounds, at least 50% of which have at least one oxygen atom and at least 50% are N2O molecules. A pressure in the chamber is between 266 Pa and 665 Pa. The method permits economical and environmentally friendly cleaning of the process chamber.Type: ApplicationFiled: May 27, 2005Publication date: December 22, 2005Inventors: Uwe Höckele, Andrew Johnson, Hans-Georg Kessler, Orest Nowik, Kai-Alexander Schreiber, Mark Sistern, Hubert Winzig