Abstract: A method includes forming a first conductive feature over a first semiconductor structure; forming a first dielectric layer over the first conductive feature and the first semiconductor structure; removing a portion of the first dielectric layer to expose a top surface of the first conductive feature; forming a second conductive feature over a second semiconductor structure, wherein the first and second conductive features comprise nanotwinned copper; forming a second dielectric layer over the second conductive feature and the second semiconductor structure, wherein the second dielectric layer comprises a same material as the first dielectric layer; removing a portion of the second dielectric layer to expose a top surface of the second conductive feature; and performing a hybrid bonding process to bond the first dielectric layer to the second dielectric layer and bond the first conductive feature to the second conductive feature.

Abstract: Disclosed herein is an electrical connecting structure having nano-twins copper, including a first substrate having a first nano-twins copper layer and a second substrate having a second nano-twins copper layer. The first nano-twins copper layer includes a plurality of first nano-twins copper grains. The second nano-twins copper layer includes a plurality of second nano-twins copper grains. The first nano-twins copper layer is joined with the second nano-twins copper layer. At least a portion of the first nano-twins copper grains extend into the second nano-twins copper layer, or at least a portion of the second nano-twins copper grains extend into the first nano-twins copper layer.

Abstract: An auxiliary prediction system is provided to predict reliability of an object after a specific operation is applied to the target object. The auxiliary prediction system includes an image correction module and an analysis module. The image correction module performs an image correction procedure to convert an original image of the target object into a first correction image. The analysis module performs a feature analysis on the first correction image through an artificial intelligence model that has been trained, so as to predict whether the target object has a defect or not after the specific operation.

Abstract: An auxiliary prediction system is provided to predict reliability of an object after a specific operation is applied to the target object. The auxiliary prediction system includes an image correction module and an analysis module. The image correction module performs an image correction procedure to convert an original image of the target object into a first correction image. The analysis module performs a feature analysis on the first correction image through an artificial intelligence model that has been trained, so as to predict whether the target object has a defect or not after the specific operation.

Abstract: Disclosed herein is an electrical connecting structure having nano-twins copper, including a first substrate having a first nano-twins copper layer and a second substrate having a second nano-twins copper layer. The first nano-twins copper layer includes a plurality of first nano-twins copper grains. The second nano-twins copper layer includes a plurality of second nano-twins copper grains. The first nano-twins copper layer is joined with the second nano-twins copper layer. At least a portion of the first nano-twins copper grains extend into the second nano-twins copper layer, or at least a portion of the second nano-twins copper grains extend into the first nano-twins copper layer.

Abstract: Disclosed herein is a method of forming an electrical connecting structure having nano-twins copper. The method includes the steps of (i) forming a first nano-twins copper layer including a plurality of nano-twins copper grains; (ii) forming a second nano-twins copper layer including a plurality of nano-twins copper grains; and (iii) joining a surface of the first nano-twins copper layer with a surface of the second nano-twins copper layer, such that at least a portion of the first nano-twins copper grains grow into the second nano-twins copper layer, or at least a portion of the second nano-twins copper grains grow into the first nano-twins copper layer. An electrical connecting structure having nano-twins copper is provided as well.

Abstract: Disclosed herein is a method of forming an electrical connecting structure having nano-twins copper. The method includes the steps of (i) forming a first nano-twins copper layer including a plurality of nano-twins copper grains; (ii) forming a second nano-twins copper layer including a plurality of nano-twins copper grains; and (iii) joining a surface of the first nano-twins copper layer with a surface of the second nano-twins copper layer, such that at least a portion of the first nano-twins copper grains grow into the second nano-twins copper layer, or at least a portion of the second nano-twins copper grains grow into the first nano-twins copper layer. An electrical connecting structure having nano-twins copper is provided as well.