Patents by Inventor Kai-Cheng SHIE

Kai-Cheng SHIE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11715721
    Abstract: Disclosed herein is an electrical connecting structure having nano-twins copper, including a first substrate having a first nano-twins copper layer and a second substrate having a second nano-twins copper layer. The first nano-twins copper layer includes a plurality of first nano-twins copper grains. The second nano-twins copper layer includes a plurality of second nano-twins copper grains. The first nano-twins copper layer is joined with the second nano-twins copper layer. At least a portion of the first nano-twins copper grains extend into the second nano-twins copper layer, or at least a portion of the second nano-twins copper grains extend into the first nano-twins copper layer.
    Type: Grant
    Filed: September 10, 2021
    Date of Patent: August 1, 2023
    Assignee: NATIONAL YANG MING CHIAO TUNG UNIVERSITY
    Inventors: Chih Chen, Kai-Cheng Shie, Jing-Ye Juang
  • Patent number: 11688054
    Abstract: An auxiliary prediction system is provided to predict reliability of an object after a specific operation is applied to the target object. The auxiliary prediction system includes an image correction module and an analysis module. The image correction module performs an image correction procedure to convert an original image of the target object into a first correction image. The analysis module performs a feature analysis on the first correction image through an artificial intelligence model that has been trained, so as to predict whether the target object has a defect or not after the specific operation.
    Type: Grant
    Filed: September 13, 2021
    Date of Patent: June 27, 2023
    Assignee: NATIONAL YANG MING CHIAO TUNG UNIVERSITY
    Inventors: King-Ning Tu, Chih Chen, Yu-Chieh Lo, Nan-Yow Chen, Kai-Cheng Shie
  • Publication number: 20220392049
    Abstract: An auxiliary prediction system is provided to predict reliability of an object after a specific operation is applied to the target object. The auxiliary prediction system includes an image correction module and an analysis module. The image correction module performs an image correction procedure to convert an original image of the target object into a first correction image. The analysis module performs a feature analysis on the first correction image through an artificial intelligence model that has been trained, so as to predict whether the target object has a defect or not after the specific operation.
    Type: Application
    Filed: September 13, 2021
    Publication date: December 8, 2022
    Inventors: King-Ning TU, Chih CHEN, Yu-Chieh LO, Nan-Yow CHEN, Kai-Cheng SHIE
  • Publication number: 20210407960
    Abstract: Disclosed herein is an electrical connecting structure having nano-twins copper, including a first substrate having a first nano-twins copper layer and a second substrate having a second nano-twins copper layer. The first nano-twins copper layer includes a plurality of first nano-twins copper grains. The second nano-twins copper layer includes a plurality of second nano-twins copper grains. The first nano-twins copper layer is joined with the second nano-twins copper layer. At least a portion of the first nano-twins copper grains extend into the second nano-twins copper layer, or at least a portion of the second nano-twins copper grains extend into the first nano-twins copper layer.
    Type: Application
    Filed: September 10, 2021
    Publication date: December 30, 2021
    Inventors: Chih CHEN, Kai-Cheng SHIE, Jing-Ye JUANG
  • Patent number: 11145619
    Abstract: Disclosed herein is a method of forming an electrical connecting structure having nano-twins copper. The method includes the steps of (i) forming a first nano-twins copper layer including a plurality of nano-twins copper grains; (ii) forming a second nano-twins copper layer including a plurality of nano-twins copper grains; and (iii) joining a surface of the first nano-twins copper layer with a surface of the second nano-twins copper layer, such that at least a portion of the first nano-twins copper grains grow into the second nano-twins copper layer, or at least a portion of the second nano-twins copper grains grow into the first nano-twins copper layer. An electrical connecting structure having nano-twins copper is provided as well.
    Type: Grant
    Filed: April 1, 2020
    Date of Patent: October 12, 2021
    Assignee: National Yang Ming Chiao Tung University
    Inventors: Chih Chen, Kai-Cheng Shie, Jing-Ye Juang
  • Publication number: 20210020599
    Abstract: Disclosed herein is a method of forming an electrical connecting structure having nano-twins copper. The method includes the steps of (i) forming a first nano-twins copper layer including a plurality of nano-twins copper grains; (ii) forming a second nano-twins copper layer including a plurality of nano-twins copper grains; and (iii) joining a surface of the first nano-twins copper layer with a surface of the second nano-twins copper layer, such that at least a portion of the first nano-twins copper grains grow into the second nano-twins copper layer, or at least a portion of the second nano-twins copper grains grow into the first nano-twins copper layer. An electrical connecting structure having nano-twins copper is provided as well.
    Type: Application
    Filed: April 1, 2020
    Publication date: January 21, 2021
    Inventors: Chih CHEN, Kai-Cheng SHIE, Jing-Ye JUANG