Patents by Inventor Kai-Chieh Chuang

Kai-Chieh Chuang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11018170
    Abstract: An image sensor includes a pair of pixel sharing circuits, a second reset transistor, an amplifier transistor, a readout transistor and a control circuit. The pair of pixel sharing circuits connected to a floating diffusion node, each including a photon device, a first reset transistor, a capture transistor, a holding transistor, a capacitor and a sharing transistor. The control circuit is configured to control the first reset transistor, the first capture transistor, the first holding transistor and the sharing transistor of each of the pair of sharing pixel circuits to be turned on or off.
    Type: Grant
    Filed: June 28, 2019
    Date of Patent: May 25, 2021
    Assignee: PIXART IMAGING INC.
    Inventors: Kuan Tang, Jui-Te Chiu, Yi-Cheng Chiu, Chia-Chi Kuo, Kai-Chieh Chuang
  • Publication number: 20210132198
    Abstract: A time-of-flight sensor for capturing a three-dimensional (3D) image of an object, includes: a light source for emitting projection light pulses at the object according to a projection signal; an array of pixel circuits for sensing reflection light pulses and storing image charges according to the reflection light pulses; and a processing circuit for calculating a first sum of first portions of the image charges and a second sum of second portions of the image charges to generate a distance information signal of the 3D image of the object simultaneously, wherein in one accumulation period, the first portion of the image charges is generated during a first time period, and the second portion of the image charges is generated during a second time period, wherein the second time period is directly following the first time period in the accumulation period.
    Type: Application
    Filed: November 5, 2019
    Publication date: May 6, 2021
    Inventors: KUAN TANG, KAI-CHIEH CHUANG, CHIA-CHI KUO, JUI-TE CHIU
  • Publication number: 20210091126
    Abstract: There is provided a structure to improve BSI global shutter efficiency. In a sensor pixel circuit, at least one strong electric field is formed at the position of a floating diffusion region to accordingly have the effect of shielding the floating diffusion region. Or, the semiconductor material from the floating diffusion node toward a light incident direction is removed in the manufacturing process such that a depletion region cannot be formed in this direction. Or, a reflection layer or a photoresist layer is formed in the light incident direction to block the light. In these ways, charges generated by the undesired noises are reduced, and noise charges are difficult to reach the floating diffusion region thereby improving the shutter efficiency.
    Type: Application
    Filed: December 3, 2020
    Publication date: March 25, 2021
    Inventors: Kai-Chieh CHUANG, Yung-Chung LEE, Yen-Min CHANG
  • Patent number: 10930698
    Abstract: There is provided a structure to improve BSI global shutter efficiency. In a sensor pixel circuit, at least one strong electric field is formed at the position of a floating diffusion region to accordingly have the effect of shielding the floating diffusion region. Or, the semiconductor material from the floating diffusion node toward a light incident direction is removed in the manufacturing process such that a depletion region cannot be formed in this direction. Or, a reflection layer or a photoresist layer is formed in the light incident direction to block the light. In these ways, charges generated by the undesired noises are reduced, and noise charges are difficult to reach the floating diffusion region thereby improving the shutter efficiency.
    Type: Grant
    Filed: April 15, 2019
    Date of Patent: February 23, 2021
    Assignee: PIXART IMAGING INC.
    Inventors: Kai-Chieh Chuang, Yung-Chung Lee, Yen-Min Chang
  • Publication number: 20200411571
    Abstract: An image sensor includes a pair of pixel sharing circuits, a second reset transistor, an amplifier transistor, a readout transistor and a control circuit. The pair of pixel sharing circuits connected to a floating diffusion node, each including a photon device, a first reset transistor, a capture transistor, a holding transistor, a capacitor and a sharing transistor. The control circuit is configured to control the first reset transistor, the first capture transistor, the first holding transistor and the sharing transistor of each of the pair of sharing pixel circuits to be turned on or off.
    Type: Application
    Filed: June 28, 2019
    Publication date: December 31, 2020
    Inventors: KUAN TANG, JUI-TE CHIU, YI-CHENG CHIU, CHIA-CHI KUO, KAI-CHIEH CHUANG
  • Publication number: 20190363115
    Abstract: There is provided a structure to improve BSI global shutter efficiency. In a sensor pixel circuit, at least one strong electric field is formed at the position of a floating diffusion region to accordingly have the effect of shielding the floating diffusion region. Or, the semiconductor material from the floating diffusion node toward a light incident direction is removed in the manufacturing process such that a depletion region cannot be formed in this direction. Or, a reflection layer or a photoresist layer is formed in the light incident direction to block the light. In these ways, charges generated by the undesired noises are reduced, and noise charges are difficult to reach the floating diffusion region thereby improving the shutter efficiency.
    Type: Application
    Filed: April 15, 2019
    Publication date: November 28, 2019
    Inventors: Kai-Chieh CHUANG, Yung-Chung LEE, Yen-Min CHANG
  • Patent number: 10079259
    Abstract: An image sensor includes a semiconductor substrate, a plurality of photoelectric transducer devices, a dielectric isolating structure and a plurality of spacers. The semiconductor substrate has a backside surface and a front side surface opposite to the backside surface. The photoelectric transducer devices are disposed on the front side surface. The dielectric isolating structure extends downwards into the semiconductor substrate from the front side surface and penetrates through the backside surface, so as to from a grid structure and isolate the photoelectric transducer devices from each other. The spacers are disposed on a plurality of sidewalls of the grid structure.
    Type: Grant
    Filed: January 17, 2017
    Date of Patent: September 18, 2018
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Shih-Chung Yu, Kai-Chieh Chuang
  • Publication number: 20170125462
    Abstract: An image sensor includes a semiconductor substrate, a plurality of photoelectric transducer devices, a dielectric isolating structure and a plurality of spacers. The semiconductor substrate has a backside surface and a front side surface opposite to the backside surface. The photoelectric transducer devices are disposed on the front side surface. The dielectric isolating structure extends downwards into the semiconductor substrate from the front side surface and penetrates through the backside surface, so as to from a grid structure and isolate the photoelectric transducer devices from each other. The spacers are disposed on a plurality of sidewalls of the grid structure.
    Type: Application
    Filed: January 17, 2017
    Publication date: May 4, 2017
    Inventors: Shih-Chung Yu, Kai-Chieh Chuang
  • Publication number: 20170040357
    Abstract: An image sensor includes a semiconductor substrate, a plurality of photoelectric transducer devices and a dielectric isolating structure. The semiconductor substrate has a backside surface and a front side surface opposite to the backside surface. The photoelectric transducer devices are disposed on the front side surface. The dielectric isolating structure extends downwards into the semiconductor substrate from the front side surface and penetrates through the backside surface, so as to from a grid structure and isolate the photoelectric transducer devices from each other.
    Type: Application
    Filed: October 19, 2015
    Publication date: February 9, 2017
    Inventors: Shih-Chung Yu, Kai-Chieh Chuang
  • Publication number: 20090014730
    Abstract: An exemplary method for forming an insulator layer over a silicon carbide substrate includes providing a silicon carbide substrate and anodizing the silicon carbide substrate in a liquid ambient at a temperature of not more than 200° C. to form a silicon dioxide layer thereon. Also provided are silicon carbide transistors and methods for fabricating the same.
    Type: Application
    Filed: July 3, 2008
    Publication date: January 15, 2009
    Applicant: NATIONAL TAIWAN UNIVERSITY
    Inventors: Jenn-Gwo Hwu, Kai-Chieh Chuang
  • Patent number: D831695
    Type: Grant
    Filed: September 18, 2017
    Date of Patent: October 23, 2018
    Assignee: Avision Inc.
    Inventors: Kai-Chieh Chuang, Ting-Kuo Chu, Hsin-Chen Lee, Yu-Ling Chen, Yung-Ting Hsu
  • Patent number: D858568
    Type: Grant
    Filed: March 1, 2018
    Date of Patent: September 3, 2019
    Assignee: AVISION INC.
    Inventors: Kai-Chieh Chuang, Ting-Kuo Chu, Hsin-Chen Lee, Yu-Ling Chen, Yung-Ting Hsu
  • Patent number: D870148
    Type: Grant
    Filed: March 1, 2018
    Date of Patent: December 17, 2019
    Assignee: AVISION INC.
    Inventors: Kai-Chieh Chuang, Ting-Kuo Chu, Hsin-Chen Lee, Yu-Ling Chen, Yung-Ting Hsu