Abstract: There is provided a structure to improve BSI global shutter efficiency. In a sensor pixel circuit, at least one strong electric field is formed at the position of a floating diffusion region to accordingly have the effect of shielding the floating diffusion region. Or, the semiconductor material from the floating diffusion node toward a light incident direction is removed in the manufacturing process such that a depletion region cannot be formed in this direction. Or, a reflection layer or a photoresist layer is formed in the light incident direction to block the light. In these ways, charges generated by the undesired noises are reduced, and noise charges are difficult to reach the floating diffusion region thereby improving the shutter efficiency.

Abstract: A time-of-flight sensor for capturing a three-dimensional (3D) image of an object, includes: a light source for emitting projection light pulses at the object according to a projection signal; an array of pixel circuits for sensing reflection light pulses and storing image charges according to the reflection light pulses; and a processing circuit for calculating a first sum of first portions of the image charges and a second sum of second portions of the image charges to generate a distance information signal of the 3D image of the object simultaneously, wherein in one accumulation period, the first portion of the image charges is generated during a first time period, and the second portion of the image charges is generated during a second time period, wherein the second time period is directly following the first time period in the accumulation period.

Abstract: An image sensor includes a pair of pixel sharing circuits, a second reset transistor, an amplifier transistor, a readout transistor and a control circuit. The pair of pixel sharing circuits connected to a floating diffusion node, each including a photon device, a first reset transistor, a capture transistor, a holding transistor, a capacitor and a sharing transistor. The control circuit is configured to control the first reset transistor, the first capture transistor, the first holding transistor and the sharing transistor of each of the pair of sharing pixel circuits to be turned on or off.

Abstract: A time-of-flight sensor for capturing a three-dimensional (3D) image of an object, includes: a light source for emitting projection light pulses at the object according to a projection signal; an array of pixel circuits for sensing reflection light pulses and storing image charges according to the reflection light pulses; and a processing circuit for calculating a first sum of first portions of the image charges and a second sum of second portions of the image charges to generate a distance information signal of the 3D image of the object simultaneously, wherein in one accumulation period, the first portion of the image charges is generated during a first time period, and the second portion of the image charges is generated during a second time period, wherein the second time period is directly following the first time period in the accumulation period.

Abstract: There is provided a structure to improve BSI global shutter efficiency. In a sensor pixel circuit, at least one strong electric field is formed at the position of a floating diffusion region to accordingly have the effect of shielding the floating diffusion region. Or, the semiconductor material from the floating diffusion node toward a light incident direction is removed in the manufacturing process such that a depletion region cannot be formed in this direction. Or, a reflection layer or a photoresist layer is formed in the light incident direction to block the light. In these ways, charges generated by the undesired noises are reduced, and noise charges are difficult to reach the floating diffusion region thereby improving the shutter efficiency.

Abstract: There is provided a structure to improve BSI global shutter efficiency. In a sensor pixel circuit, at least one strong electric field is formed at the position of a floating diffusion region to accordingly have the effect of shielding the floating diffusion region. Or, the semiconductor material from the floating diffusion node toward a light incident direction is removed in the manufacturing process such that a depletion region cannot be formed in this direction. Or, a reflection layer or a photoresist layer is formed in the light incident direction to block the light. In these ways, charges generated by the undesired noises are reduced, and noise charges are difficult to reach the floating diffusion region thereby improving the shutter efficiency.

Abstract: An image sensor includes a pair of pixel sharing circuits, a second reset transistor, an amplifier transistor, a readout transistor and a control circuit. The pair of pixel sharing circuits connected to a floating diffusion node, each including a photon device, a first reset transistor, a capture transistor, a holding transistor, a capacitor and a sharing transistor. The control circuit is configured to control the first reset transistor, the first capture transistor, the first holding transistor and the sharing transistor of each of the pair of sharing pixel circuits to be turned on or off.

Abstract: There is provided a structure to improve BSI global shutter efficiency. In a sensor pixel circuit, at least one strong electric field is formed at the position of a floating diffusion region to accordingly have the effect of shielding the floating diffusion region. Or, the semiconductor material from the floating diffusion node toward a light incident direction is removed in the manufacturing process such that a depletion region cannot be formed in this direction. Or, a reflection layer or a photoresist layer is formed in the light incident direction to block the light. In these ways, charges generated by the undesired noises are reduced, and noise charges are difficult to reach the floating diffusion region thereby improving the shutter efficiency.

Abstract: An image sensor includes a semiconductor substrate, a plurality of photoelectric transducer devices, a dielectric isolating structure and a plurality of spacers. The semiconductor substrate has a backside surface and a front side surface opposite to the backside surface. The photoelectric transducer devices are disposed on the front side surface. The dielectric isolating structure extends downwards into the semiconductor substrate from the front side surface and penetrates through the backside surface, so as to from a grid structure and isolate the photoelectric transducer devices from each other. The spacers are disposed on a plurality of sidewalls of the grid structure.

Abstract: An image sensor includes a semiconductor substrate, a plurality of photoelectric transducer devices, a dielectric isolating structure and a plurality of spacers. The semiconductor substrate has a backside surface and a front side surface opposite to the backside surface. The photoelectric transducer devices are disposed on the front side surface. The dielectric isolating structure extends downwards into the semiconductor substrate from the front side surface and penetrates through the backside surface, so as to from a grid structure and isolate the photoelectric transducer devices from each other. The spacers are disposed on a plurality of sidewalls of the grid structure.

Abstract: An image sensor includes a semiconductor substrate, a plurality of photoelectric transducer devices and a dielectric isolating structure. The semiconductor substrate has a backside surface and a front side surface opposite to the backside surface. The photoelectric transducer devices are disposed on the front side surface. The dielectric isolating structure extends downwards into the semiconductor substrate from the front side surface and penetrates through the backside surface, so as to from a grid structure and isolate the photoelectric transducer devices from each other.

Abstract: An exemplary method for forming an insulator layer over a silicon carbide substrate includes providing a silicon carbide substrate and anodizing the silicon carbide substrate in a liquid ambient at a temperature of not more than 200° C. to form a silicon dioxide layer thereon. Also provided are silicon carbide transistors and methods for fabricating the same.