Patents by Inventor Kai-Chih Liang
Kai-Chih Liang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240113032Abstract: Interconnect structure packages (e.g., through silicon vias (TSV) packages, through interlayer via (TIV) packages) may be pre-manufactured as opposed to forming TIVs directly on a carrier substrate during a manufacturing process for a semiconductor die package at backend packaging facility. The interconnect structure packages may be placed onto a carrier substrate during manufacturing of a semiconductor device package, and a semiconductor die package may be placed on the carrier substrate adjacent to the interconnect structure packages. A molding compound layer may be formed around and in between the interconnect structure packages and the semiconductor die package.Type: ApplicationFiled: April 25, 2023Publication date: April 4, 2024Inventors: Kai-Fung CHANG, Chin-Wei LIANG, Sheng-Feng WENG, Ming-Yu YEN, Cheyu LIU, Hung-Chih CHEN, Yi-Yang LEI, Ching-Hua HSIEH
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Publication number: 20240023447Abstract: A piezoelectric actuating apparatus including a frame, a rotatable element, an actuating structure, and a sensing structure is provided. The rotatable element is disposed in an accommodating opening and connected to the frame through a rotating shaft structure. The rotatable element is configured to reciprocatingly swing relative to the frame with an axis of the rotating shaft structure. The actuating structure is elastically coupled to the rotatable element through at least one first elastic component. The sensing structure is elastically coupled to the rotatable element through at least one second elastic component. The actuating structure is deformed by receiving a driving signal, and drives the rotatable element to rotate around the axis through the at least one first elastic component. The rotating rotatable element is linked to the sensing structure through the at least one second elastic component to be correspondingly deformed, and outputs a sensing signal.Type: ApplicationFiled: October 11, 2022Publication date: January 18, 2024Applicant: Coretronic MEMS CorporationInventors: Hao-Chien Cheng, Wei-Leun Fang, Kai-Chih Liang, Ming-Ching Wu
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Publication number: 20230081170Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.Type: ApplicationFiled: October 31, 2022Publication date: March 16, 2023Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Alexander KALNITSKY, Yi-Shao LIU, Kai-Chih LIANG, Chia-Hua CHU, Chun-Ren CHENG, Chun-Wen CHENG
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Publication number: 20230056353Abstract: A micro scanning mirror, including a fixed substrate, a lens, and multiple cantilevers, are provided. Each cantilever includes a piezoelectric material structure, multiple first drive electrodes, and multiple second drive electrodes. The piezoelectric material structure includes a connecting part, a folding part, and a fixed part. The connecting part connects the lens along a direction parallel to a central axis of the lens. The folding part has a bending region and multiple drive electrode regions. The fixed part is connected to the fixed substrate, and the folding part is connected to the connecting part and the fixed part. The first drive electrodes and the second drive electrodes are respectively located in the corresponding drive electrode regions in the folding part. The micro scanning mirror of the disclosure can drive a large-sized micro mirror to rotate at an appropriate rotation angle.Type: ApplicationFiled: August 3, 2022Publication date: February 23, 2023Applicant: Coretronic MEMS CorporationInventors: Shih-Chi Liu, Wei-Leun Fang, Kai-Chih Liang, Kai-Chieh Chang, Ming-Ching Wu
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Patent number: 11486854Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.Type: GrantFiled: December 26, 2019Date of Patent: November 1, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Alexander Kalnitsky, Yi-Shao Liu, Kai-Chih Liang, Chia-Hua Chu, Chun-Ren Cheng, Chun-Wen Cheng
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Publication number: 20220165592Abstract: A semiconductor device manufacturing system and a method for manufacturing semiconductor device are provided. The semiconductor device manufacturing system includes a conditioner connected to a semiconductor device manufacturing apparatus, a data collector connected to the conditioner and a processor connected to the data collector. The conditioner is configured to control a temperature and a humidity of an air and deliver the air to the semiconductor device manufacturing apparatus. The data collector is configured to collect data from the conditioner. The processor is configured to receive the data transferred from the data collector.Type: ApplicationFiled: November 24, 2020Publication date: May 26, 2022Inventors: KAI-CHIH LIANG, YU KAI CHEN
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Patent number: 11180365Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.Type: GrantFiled: October 28, 2019Date of Patent: November 23, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Chih Liang, Chia-Hua Chu, Te-Hao Lee, Jiou-Kang Lee, Chung-Hsien Lin
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Publication number: 20200150080Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.Type: ApplicationFiled: December 26, 2019Publication date: May 14, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Alexander KALNITSKY, Yi-Shao LIU, Kai-Chih LIANG, Chia-Hua CHU, Chun-Ren CHENG, Chun-Wen CHENG
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Publication number: 20200062588Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.Type: ApplicationFiled: October 28, 2019Publication date: February 27, 2020Inventors: Kai-Chih Liang, Chia-Hua Chu, Te-Hao Lee, Jiou-Kang Lee, Chung-Hsien Lin
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Patent number: 10520467Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.Type: GrantFiled: March 5, 2018Date of Patent: December 31, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Alexander Kalnitsky, Yi-Shao Liu, Kai-Chih Liang, Chia-Hua Chu, Chun-Ren Cheng, Chun-Wen Cheng
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Patent number: 10457550Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.Type: GrantFiled: October 15, 2018Date of Patent: October 29, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Chih Liang, Chia-Hua Chu, Te-Hao Lee, Jiou-Kang Lee, Chung-Hsien Lin
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Publication number: 20190047851Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.Type: ApplicationFiled: October 15, 2018Publication date: February 14, 2019Inventors: Kai-Chih Liang, Chia-Hua Chu, Te-Hao Lee, Jiou-Kang Lee, Chung-Hsien Lin
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Patent number: 10099919Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.Type: GrantFiled: November 17, 2016Date of Patent: October 16, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Chih Liang, Chia-Hua Chu, Te-Hao Lee, Jiou-Kang Lee, Chung-Hsien Lin
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Publication number: 20180195998Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.Type: ApplicationFiled: March 5, 2018Publication date: July 12, 2018Inventors: Alexander Kalnitsky, Yi-Shao Liu, Kai-Chih Liang, Chia-Hua Chu, Chun-Ren Cheng, Chun-Wen Cheng
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Patent number: 9910009Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.Type: GrantFiled: July 27, 2017Date of Patent: March 6, 2018Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Alexander Kalnitsky, Yi-Shao Liu, Kai-Chih Liang, Chia-Hua Chu, Chun-Ren Cheng, Chun-Wen Cheng
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Publication number: 20170322177Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.Type: ApplicationFiled: July 27, 2017Publication date: November 9, 2017Inventors: Alexander Kalnitsky, Yi-Shao Liu, Kai-Chih Liang, Chia-Hua Chu, Chun-Ren Cheng, Chun-Wen Cheng
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Patent number: 9791406Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.Type: GrantFiled: October 3, 2016Date of Patent: October 17, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Alexander Kalnitsky, Yi-Shao Liu, Kai-Chih Liang, Chia-Hua Chu, Chun-Ren Cheng, Chun-Wen Cheng
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Patent number: 9617147Abstract: Exemplary microelectromechanical system (MEMS) devices, and methods for fabricating such are disclosed. An exemplary method includes providing a silicon-on-insulator (SOI) substrate, wherein the SOI substrate includes a first silicon layer separated from a second silicon layer by an insulator layer; processing the first silicon layer to form a first structure layer of a MEMS device; bonding the first structure layer to a substrate; and processing the second silicon layer to form a second structure layer of the MEMS device.Type: GrantFiled: April 13, 2015Date of Patent: April 11, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Hua Chu, Chun-Wen Cheng, Jiou-Kang Lee, Kai-Chih Liang, Chung-Hsien Lin, Te-Hao Lee
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Publication number: 20170066647Abstract: A microelectromechanical system (MEMS) device may include a MEMS structure over a first substrate. The MEMS structure comprises a movable element. Depositing a first conductive material over the first substrate and etching trenches in a second substrate. Filling the trenches with a second conductive material and depositing a third conductive material over the second conductive material and the second substrate. Bonding the first substrate and the second substrate and thinning a backside of the second substrate which exposes the second conductive material in the trenches.Type: ApplicationFiled: November 17, 2016Publication date: March 9, 2017Inventors: Kai-Chih Liang, Chia-Hua Chu, Te-Hao Lee, Jiou-Kang Lee, Chung-Hsien Lin
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Publication number: 20170023521Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.Type: ApplicationFiled: October 3, 2016Publication date: January 26, 2017Inventors: Alexander KALNITSKY, Yi-Shao LIU, Kai-Chih LIANG, Chia-Hua CHU, Chun-Ren CHENG, Chun-Wen CHENG