Abstract: Disclosed are an image display method and a 3d display system. The method is adapted to the 3d display system including a 3d display device and includes the following steps. A first image and a second image are obtained by splitting an input image according to a 3d image format. Whether the input image is a 3D format image complying with the 3D image format is determined through a stereo matching processing performed on the first image and the second image. An image interweaving process is enabled to be performed on the input image to generate an interweaving image in response to determining that the input image is the 3D format image complying with the 3D image format, and the interweaving image is displayed via the 3D display device.

Abstract: The present disclosure provides a method for treating liver cirrhosis by using a composition including mesenchymal stem cells, extracellular vesicles produced by the mesenchymal stem cells, and growth factors. The composition of the present disclosure achieves the effect of treating liver cirrhosis through various efficacy experiments.

Abstract: This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for switching a secondary cell to a primary cell. A user equipment (UE) monitors a first radio condition of the UE for beams of a primary cell and a second radio condition for beams of one or more secondary cells configured for the UE in carrier aggregation. The UE transmits a request to configure a candidate beam of at least one candidate secondary cell as a new primary cell in response to the first radio condition not satisfying a first threshold and the second radio condition for the at least one candidate secondary cell satisfying a second threshold. A base station determines to reconfigure at least one secondary cell as the new primary cell. The base station and the UE perform a handover of the UE to the new primary cell.

Abstract: A method includes forming a gate stack, which includes a gate dielectric and a metal gate electrode over the gate dielectric. An inter-layer dielectric is formed on opposite sides of the gate stack. The gate stack and the inter-layer dielectric are planarized. The method further includes forming an inhibitor film on the gate stack, with at least a portion of the inter-layer dielectric exposed, selectively depositing a dielectric hard mask on the inter-layer dielectric, with the inhibitor film preventing the dielectric hard mask from being formed thereon, and etching to remove a portion of the gate stack, with the dielectric hard mask acting as a portion of a corresponding etching mask.

Abstract: A video processing apparatus implemented in a chip includes an on-chip prediction buffer and a processing circuit. The on-chip prediction buffer is shared by a plurality of coding tools for prediction, and is used to store reference data. The processing circuit supports the coding tools for prediction, reads a plurality of first reference data from the on-chip prediction buffer as input data of a first coding tool that is included in the coding tools and enabled by the processing circuit, and writes output data of the first coding tool enabled by the processing circuit into the on-chip prediction buffer as a plurality of second reference data.

Abstract: A prediction processing system includes a processing circuit and a reference data buffer. The processing circuit performs a first inter prediction operation upon a first prediction block in a frame to generate a first inter prediction result, and further performs a second inter prediction operation upon a second prediction block during a first period. The reference data buffer buffers a reference data derived from the first inter prediction result. The processing circuit further fetches the reference data from the reference data buffer, and performs a non-inter prediction operation according to at least the reference data during a second period, wherein the second period overlaps the first period.

Abstract: A video processing apparatus implemented in a chip includes an on-chip prediction buffer and a processing circuit. The on-chip prediction buffer is shared by a plurality of coding tools for prediction, and is used to store reference data. The processing circuit supports the coding tools for prediction, reads a plurality of first reference data from the on-chip prediction buffer as input data of a first coding tool that is included in the coding tools and enabled by the processing circuit, and writes output data of the first coding tool enabled by the processing circuit into the on-chip prediction buffer as a plurality of second reference data.

Abstract: A motion vector refinement apparatus includes a storage device, a reference block fetch circuit, and a processing circuit. The reference block fetch circuit fetches a forward reference block and a backward reference block according to at least specified motion vectors (MVs) of a current block, and stores the forward reference block and the backward reference block into the storage device. The processing circuit derives a first reference block from the forward reference block and a second reference block from the backward reference block, calculates at least one accumulated pixel difference (APD) value for at least one block pair each having a first block found in the first reference block and a second block found in the second reference block, and determines an offset setting for motion vector refinement of the specified MVs according to the at least one APD value.

Abstract: A post processing apparatus includes a super-resolution (SR) filtering circuit and a loop restoration (LR) filtering circuit. The SR filtering circuit applies SR filtering to a processing result of a preceding circuit. The LR filtering circuit applies LR filtering to a processing result of the SR filtering circuit. Before the SR filtering circuit finishes SR filtering of all pixels of a frame that are generated by the preceding circuit, the LR filtering circuit starts LR filtering of pixels that are derived from applying SR filtering to pixels included in the frame.

Abstract: A method includes forming an insulator over a substrate. The insulator includes a first electrode, a second electrode, and a resistive element between the first electrode and the second electrode. The insulator is transformed into a resistor by applying a voltage to the insulator. The resistor is electrically connected to a transistor after transforming the insulator into the resistor.

Abstract: A post processing apparatus includes a super-resolution (SR) filtering circuit and a loop restoration (LR) filtering circuit. The SR filtering circuit applies SR filtering to a processing result of a preceding circuit. The LR filtering circuit applies LR filtering to a processing result of the SR filtering circuit. Before the SR filtering circuit finishes SR filtering of all pixels of a frame that are generated by the preceding circuit, the LR filtering circuit starts LR filtering of pixels that are derived from applying SR filtering to pixels included in the frame.

Abstract: A memory device is provided which comprises a memory array, a first scrambling circuit and a second scrambling circuit. The first scrambling circuit is configured to provide first scrambled data with a first scrambling pattern in response to input data. The second scrambling circuit is configured to provide second scrambled data with a second scrambling pattern in response to the first scrambled data.

Abstract: A low-dropout (LDO) regulator is provided. The LDO regulator comprises a first circuit operating as a closed loop control system. The first circuit is configured to control a voltage at a first node such that the voltage at the first node is substantially equal to a specified regulator output voltage. The LDO regulator comprises a second circuit operating as an open loop control system. The second circuit is configured to increase the voltage at the first node when a current flowing through a load changes from a first current to a second current. The first current is substantially equal to 0 amperes.

Abstract: A method includes forming an insulator over a substrate. The insulator includes a first electrode, a second electrode, and a resistive element between the first electrode and the second electrode. The insulator is transformed into a resistor by applying a voltage to the insulator. The resistor is electrically connected to a transistor after transforming the insulator into the resistor.

Abstract: A method of fabricating a resistive memory array includes forming a plurality of insulators and a conductive structure on a first substrate, performing a resistor-forming process to transform the insulators into a plurality of resistors, polishing the conductive structure to expose a plurality of contact points respectively electrically connected to the resistors, providing a second substrate having a plurality of transistors and a plurality of interconnect pads, bonding respectively the interconnect pads and the contact points, and removing the first substrate from the resistors and the conductive structure.

Abstract: A low-dropout (LDO) regulator is provided. The LDO regulator comprises a first circuit operating as a closed loop control system. The first circuit is configured to control a voltage at a first node such that the voltage at the first node is substantially equal to a specified regulator output voltage. The LDO regulator comprises a second circuit operating as an open loop control system. The second circuit is configured to increase the voltage at the first node when a current flowing through a load changes from a first current to a second current. The first current is substantially equal to 0 amperes.

Abstract: A method for wirelessly connecting to an internet, applied for establishing a wireless connection between a mobile device and a plurality of wireless networking devices, the method including: the mobile device searching for the plurality of wireless networking devices via a wireless communication; the mobile device wirelessly connecting with a main controlling device which is one of the plurality of wireless networking devices; the mobile device providing a connection information to the main controlling device for connecting to a base station; and the main controlling device broadcasting the connection information to the other wireless networking devices of the plurality of wireless networking devices; and the main controlling device and the other wireless networking devices of the plurality of wireless networking devices connecting to the base station according to the connection information.

Abstract: A low-dropout (LDO) regulator is provided. The LDO regulator comprises a first circuit operating as a closed loop control system. The first circuit is configured to control a voltage at a first node such that the voltage at the first node is substantially equal to a specified regulator output voltage. The LDO regulator comprises a second circuit operating as an open loop control system. The second circuit is configured to increase the voltage at the first node when a current flowing through a load changes from a first current to a second current. The first current is substantially equal to 0 amperes.

Abstract: The present disclosure relates to a semiconductor integrated circuit. The semiconductor integrated circuit includes a substrate, a first transistor and a first patterned conductive layer. The first transistor has a source region, a drain region in the substrate and a gate region on the substrate. The first patterned conductive layer is electrically connected to the drain region of the first transistor. The first patterned conductive layer includes a first section, a second section and a fusible device.

Abstract: A embodiment package includes a three dimensional integrated circuit (3D IC) with first input/output pads on a first side and second input/output pads on a second side, a first fan out structure electrically coupled to the first input/output pads on the first side of the three dimensional integrated circuit, and a second fan out structure electrically coupled to the second input/output pads on the second side of the three dimensional integrated circuit.