Abstract: A method of manufacturing a semiconductor structure, including receiving a first substrate including a plurality of conductive bumps disposed over the first substrate; receiving a second substrate; disposing an adhesive over the first substrate; removing a portion of the adhesive to expose at least one of the plurality of conductive bumps; and bonding the first substrate with the second substrate.

Abstract: A method of manufacturing a semiconductor structure, including receiving a first substrate including a plurality of conductive bumps disposed over the first substrate; receiving a second substrate; disposing an adhesive over the first substrate; removing a portion of the adhesive to expose at least one of the plurality of conductive bumps; and bonding the first substrate with the second substrate.

Abstract: A method of manufacturing a semiconductor structure, comprising: receiving a first substrate including a first surface, a second surface opposite to the first surface and a plurality of conductive bumps disposed over the first surface; receiving a second substrate; disposing an adhesive over the first substrate or the second substrate; heating the adhesive in a first ambiance; bonding the first substrate with the second substrate by applying a force of less than about 10,000N upon the first substrate or the second substrate and heating the adhesive in a second ambiance; and thinning down a thickness of the first substrate from the second surface.

Abstract: A method of manufacturing a semiconductor structure, comprising: receiving a first substrate including a first surface, a second surface opposite to the first surface and a plurality of conductive bumps disposed over the first surface; receiving a second substrate; disposing an adhesive over the first substrate or the second substrate; heating the adhesive in a first ambiance; bonding the first substrate with the second substrate by applying a force of less than about 10,000N upon the first substrate or the second substrate and heating the adhesive in a second ambiance; and thinning down a thickness of the first substrate from the second surface.

Abstract: A method for performing delay locked looping upon a received signal which reduces the asymmetry of auto-correlation function resulting from sampling is provided. The received signal is a spread spectrum code signal, and the method includes: generating a plurality of replica spread spectrum code signals according to an estimated code phase delay and phase spacing, the replica spread spectrum code signals having phases respectively different from the phase of the received signal; calculating a spread spectrum code error statistics signal according to the replica spread spectrum code signals and the received signal; and adjusting the estimated code phase delay according to the spread spectrum code error statistics signal and a phase difference between a sampled point of at least one replica spread spectrum code signal and a corresponding signal transition point.

Abstract: A method for performing delay locked looping upon a received signal which reduces the asymmetry of auto-correlation function resulting from sampling is provided. The received signal is a spread spectrum code signal, and the method includes: generating a plurality of replica spread spectrum code signals according to an estimated code phase delay and phase spacing, the replica spread spectrum code signals having phases respectively different from the phase of the received signal; calculating a spread spectrum code error statistics signal according to the replica spread spectrum code signals and the received signal; and adjusting the estimated code phase delay according to the spread spectrum code error statistics signal and a phase difference between a sampled point of at least one replica spread spectrum code signal and a corresponding signal transition point.