Abstract: A device includes a gate stack; a gate spacer on a sidewall of the gate stack; a source/drain region adjacent the gate stack; a silicide; and a source/drain contact electrically connected to the source/drain region through the silicide. The silicide includes a conformal first portion in the source/drain region, the conformal first portion comprising a metal and silicon; and a conformal second portion over the conformal first portion, the conformal second portion further disposed on a sidewall of the gate spacer, the conformal second portion comprising the metal, silicon, and nitrogen.

Abstract: A micro electro mechanical system (MEMS) includes a circuit substrate comprising electronic circuitry, a support substrate having a recess, a bonding layer disposed between the circuit substrate and the support substrate, through holes passing through the circuit substrate to the recess, a first conductive layer disposed on a front side of the circuit substrate, and a second conductive layer disposed on an inner wall of the recess. The first conductive layer extends into the through holes and the second conductive layer extends into the through holes and coupled to the first conductive layer.

Abstract: A measurement device for detecting a material level and a temperature has a cable, a level sensing module, a thermal sensing module, a processing module, and a power module. The measurement device detects difference of currents between an electrode of the cable and the earth, and calculates a material level of a material stored in a silo according to the RF admittance. The cable comprises a plurality of thermal sensing units for detecting a temperature of the material. The measurement device further calibrates a material capacitance of the material with the temperature for avoiding an error caused by an inaccurate parameter.

Abstract: A measurement device for detecting a material level and a temperature has a cable, a level sensing module, a thermal sensing module, a processing module, and a power module. The measurement device detects difference of currents between an electrode of the cable and the earth, and calculates a material level of a material stored in a silo according to the RF admittance. The cable comprises a plurality of thermal sensing units for detecting a temperature of the material. The measurement device further calibrates a material capacitance of the material with the temperature for avoiding an error caused by an inaccurate parameter.