Patents by Inventor Kai-Feng Cheng

Kai-Feng Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METAL OXIDE COMPOSITE AS ETCH STOP LAYER
    Publication number: 20250132197
    Abstract: A semiconductor device includes a substrate, a first conductive feature disposed in a top portion of the substrate, an etch stop layer formed of a metal oxide composite and disposed on a top surface of the substrate, and a second conductive feature disposed on and through the etch stop layer and in contact with the first conductive feature. The metal oxide composite contains a metal element represented by M, and a top surface of the etch stop layer includes an M—O—X group, O representing oxygen, and X representing an element other than hydrogen.
    Type: Application
    Filed: December 20, 2024
    Publication date: April 24, 2025
    Inventors: Kai-Feng Cheng, Chi-Lin Teng, Hai-Ching Chen, Hsin-Yen Huang
  • Adhesion promoter apparatus and method
    Patent number: 9490148
    Abstract: A structure comprises a substrate having a plateau region and a trench region, a reflecting layer formed over a top surface of the trench region, a first adhesion promoter layer formed over the reflecting layer, a bottom cladding layer deposited over the first adhesion promoter layer, a core layer formed over the bottom cladding layer and a top cladding layer formed over the core layer.
    Type: Grant
    Filed: September 27, 2012
    Date of Patent: November 8, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Hao Tseng, Ying-Hao Kuo, Kai-Feng Cheng, Hai-Ching Chen, Tien-I Bao
  • Adhesion Promoter Apparatus and Method
    Publication number: 20140084421
    Abstract: A structure comprises a substrate having a plateau region and a trench region, a reflecting layer formed over a top surface of the trench region, a first adhesion promoter layer formed over the reflecting layer, a bottom cladding layer deposited over the first adhesion promoter layer, a core layer formed over the bottom cladding layer and a top cladding layer formed over the core layer.
    Type: Application
    Filed: September 27, 2012
    Publication date: March 27, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-Hao Tseng, Ying-Hao Kuo, Kai-Feng Cheng, Hai-Ching Chen, Tien-I Bao