Patents by Inventor Kai Funaki

Kai Funaki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10787393
    Abstract: The present invention provides a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, wherein the silicon nitride crystal grains are covered with the grain boundary phase and width of the grain boundary phase is 0.2 nm or more. It is preferable that the width of the grain boundary phase is 0.2 nm to 5 nm. Additionally, it is preferable that the silicon nitride sintered body includes 15% by mass or less of the grain boundary phase. According to the above-described configuration, it is possible to provide a high-temperature-resistant silicon nitride sintered body in which degradation of the grain boundary phase under high temperature environment is suppressed. This silicon nitride sintered body is suitable for constituent material of a high-temperature-resistant member, use environment of which is 300° C. or higher.
    Type: Grant
    Filed: March 28, 2016
    Date of Patent: September 29, 2020
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Isao Ikeda, Kai Funaki, Yutaka Abe
  • Patent number: 10744592
    Abstract: The present invention provides a welding tool member for friction stir welding comprising a silicon nitride sintered body, wherein the silicon nitride sintered body includes an additive component other than silicon nitride in a content of 15% by mass or less, and the additive component includes three or more elements selected from Y, Al, Mg, Si, Ti, Hf, Mo and C. It is preferable that the content of the additive component is 3% by mass or more and 12.5% by mass or less. It is also preferable that the additive component includes four or more elements selected from Y, Al, Mg, Si, Ti, Hf, Mo and C. Due to above structure, there can be provided a welding tool member for friction stir welding having a high durability.
    Type: Grant
    Filed: August 28, 2015
    Date of Patent: August 18, 2020
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Isao Ikeda, Kai Funaki, Yutaka Abe
  • Publication number: 20190210149
    Abstract: The friction stir welding tool member according to the present invention is made of a ceramic member in which a shoulder portion and a probe portion are integrally formed, wherein a root portion of the probe portion and an end portion of the shoulder portion have a curved surface shape; and the friction stir welding tool member has a ratio (R1/D) of 0.02 or more and 0.20 or less when a curvature radius of the end portion of the shoulder portion is defined as R1 (mm) and an outer diameter of the shoulder portion is defined as D (mm). In addition, the ceramic member is preferably made of a silicon nitride sintered body having a Vickers hardness of 1400 HV1 or more. According to the above-described configuration, a friction stir welding tool member having excellent durability can be provided.
    Type: Application
    Filed: August 4, 2017
    Publication date: July 11, 2019
    Applicants: OSAKA UNIVERSITY, TOSHIBA MATERIALS CO., LTD.
    Inventors: Hidetoshi FUJII, Yoshiaki MORISADA, Kai FUNAKI, Isao IKEDA, Yutaka ABE, Masahiro KATO
  • Publication number: 20190168337
    Abstract: The friction stir welding tool member according to the present invention is made of a silicon nitride sintered body, wherein the silicon nitride sintered body contains 15% by mass or less of additive components except silicon nitride in such a manner that the additive components include at least one element selected from lanthanoid elements and at least one element selected from Mg, Ti, Hf, and Mo. In addition, it is preferable that the additive components further include at least one element selected from Al, Si, and C. According to the above-described configuration, a friction stir welding tool member having an excellent durability can be provided.
    Type: Application
    Filed: August 4, 2017
    Publication date: June 6, 2019
    Applicants: OSAKA UNIVERSITY, TOSHIBA MATERIALS CO., LTD.
    Inventors: Hidetoshi FUJII, Yoshiaki MORISADA, Kai FUNAKI, Isao IKEDA, Yutaka ABE, Masahiro KATO
  • Publication number: 20180134626
    Abstract: The present invention provides a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, wherein the silicon nitride crystal grains are covered with the grain boundary phase and width of the grain boundary phase is 0.2 nm or more. It is preferable that the width of the grain boundary phase is 0.2 nm to 5 nm. Additionally, it is preferable that the silicon nitride sintered body includes 15% by mass or less of the grain boundary phase. According to the above-described configuration, it is possible to provide a high-temperature-resistant silicon nitride sintered body in which degradation of the grain boundary phase under high temperature environment is suppressed. This silicon nitride sintered body is suitable for constituent material of a high-temperature-resistant member, use environment of which is 300° C. or higher.
    Type: Application
    Filed: March 28, 2016
    Publication date: May 17, 2018
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Isao IKEDA, Kai FUNAKI, Yutaka ABE
  • Publication number: 20170297141
    Abstract: The present invention provides a welding tool member for friction stir welding comprising a silicon nitride sintered body, wherein the silicon nitride sintered body includes an additive component other than silicon nitride in a content of 15% by mass or less, and the additive component includes three or more elements selected from Y, Al, Mg, Si, Ti, Hf, Mo and C. It is preferable that the content of the additive component is 3% by mass or more and 12.5% by mass or less. It is also preferable that the additive component includes four or more elements selected from Y, Al, Mg, Si, Ti, Hf, Mo and C. Due to above structure, there can be provided a welding tool member for friction stir welding having a high durability.
    Type: Application
    Filed: August 28, 2015
    Publication date: October 19, 2017
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Isao IKEDA, Kai FUNAKI, Yutaka ABE
  • Patent number: 9440887
    Abstract: The present invention provides a silicon nitride sintered body comprising a silicon nitride crystalline particle and a grain boundary phase, the silicon nitride sintered body having an area ratio of the grain boundary phase per 100 ?m×100 ?m unit area of 15 to 35% when an arbitrary cross section thereof is photographed. Further, it is preferable that the area ratio of the grain boundary phase per 100 ?m×100 ?m unit area is 15 to 25%. Furthermore, the silicon nitride sintered body is suitable for a wear resistant member. Due to above structure, there can be provided a silicon nitride sintered body and a wear resistant member having a high processability (workability) and an excellent sliding property.
    Type: Grant
    Filed: October 21, 2013
    Date of Patent: September 13, 2016
    Assignees: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Kai Funaki, Michiyasu Komatsu, Haruhiko Yamaguti, Katsuyuki Aoki
  • Publication number: 20150251957
    Abstract: The present invention provides a silicon nitride sintered body comprising a silicon nitride crystalline particle and a grain boundary phase, the silicon nitride sintered body having an area ratio of the grain boundary phase per 100 ?m×100 ?m unit area of 15 to 35% when an arbitrary cross section thereof is photographed. Further, it is preferable that the area ratio of the grain boundary phase per 100 ?m×100 ?m unit area is 15 to 25%. Furthermore, the silicon nitride sintered body is suitable for a wear resistant member. Due to above structure, there can be provided a silicon nitride sintered body and a wear resistant member having a high processability (workability) and an excellent sliding property.
    Type: Application
    Filed: October 21, 2013
    Publication date: September 10, 2015
    Applicants: KABUSHIKI KAISHA TOSHIBA, TOSHIBA MATERIALS CO., LTD.
    Inventors: Kai Funaki, Michiyasu Komatsu, Haruhiko Yamaguti, Katsuyuki Aoki
  • Publication number: 20130157445
    Abstract: There is provided a polycrystalline aluminum nitride base material having a linear expansion coefficient similar to GaN. The polycrystalline aluminum nitride base material as a substrate material for crystal growth of GaN-base semiconductors has a mean linear expansion coefficient of 4.9×10?6/K to 6.1×10?6/K between 20° C. and 600° C. and 5.5×10?6/K to 6.6×10?6/K between 20° C. and 1100° C.
    Type: Application
    Filed: August 3, 2011
    Publication date: June 20, 2013
    Inventors: Kimiya Miyashita, Michiyasu Komatsu, Katsuyuki Aoki, Kai Funaki