Patents by Inventor Kai Gehrke
Kai Gehrke has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240043731Abstract: The invention relates to a passive radiant cooler (1) having a substrate and a layer structure which is applied to the substrate (2) and comprises the at least one reflection layer (3) and at least one emission layer (4), the emission layer (4) comprising an at least partially crosslinked polymer and/or a ceramic material derived from this polymer which are produced in order to form the emission layer (4) from at least one crosslinkable, silicon-based prepolymer, the prepolymer being composed of at least one type of monomer unit according to formula (I).Type: ApplicationFiled: December 13, 2021Publication date: February 8, 2024Applicant: Deutsches Zentrum für Luft-und Raumfahrt e.V.Inventors: Udayan Banik, Hosni MEDDEB, Oleg SERGEEV, Kai GEHRKE
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Patent number: 10644201Abstract: In one embodiment, the optoelectronic semiconductor chip (1) comprises a first semiconductor region (21) of a first conductivity type and a second semiconductor region (23) of a second conductivity type. An active zone (22) configured for generating light is situated between these two semiconductor regions (21, 23). A first electric contact layer (31) is situated directly at the first semiconductor region (21) in places. Furthermore, a second electric contact layer (32) is situated directly at the second semiconductor region (23) in places, wherein the semiconductor regions (21, 23) are energized by way of the contact layers (31, 33). Furthermore, two metallic current leads (41, 43) and an insulation layer (5) are present. The insulation layer (5) covers the second semiconductor region (23) directly in places and rises over the latter. Further, the insulation layer (5) is situated below the current lead (43) for the second semiconductor region (23).Type: GrantFiled: July 13, 2016Date of Patent: May 5, 2020Assignee: OSRAM OLED GMBHInventor: Kai Gehrke
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Patent number: 10566501Abstract: A method for producing an optoelectronic semiconductor device and an optoelectronic semiconductor device are disclosed. In an embodiment the method includes providing a semiconductor layer sequence including a light-emitting and/or light-absorbing active zone and a top face downstream of the active zone in a stack direction extending perpendicular to a main plane of extension of the semiconductor layer sequence, applying a layer stack onto the top face, wherein the layer stack includes an oxide layer containing indium, and an intermediate face downstream of the top face in the stack direction and applying a contact layer onto the intermediate face, wherein the contact layer includes indium tin oxide, and wherein the layer stack is, within the bounds of manufacturing tolerances, free of tin.Type: GrantFiled: June 16, 2016Date of Patent: February 18, 2020Assignee: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Simeon Katz, Kai Gehrke, Massimo Drago, Joachim Hertkorn
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Patent number: 10043958Abstract: A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.Type: GrantFiled: January 10, 2017Date of Patent: August 7, 2018Assignee: OSRAM Opto Semiconductors GmbHInventors: Korbinian Perzlmaier, Kai Gehrke, Robert Walter, Karl Engl, Guido Weiss, Markus Maute, Stefanie Rammelsberger
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Publication number: 20180198028Abstract: In one embodiment, the optoelectronic semiconductor chip (1) comprises a first semiconductor region (21) of a first conductivity type and a second semiconductor region (23) of a second conductivity type. An active zone (22) configured for generating light is situated between these two semiconductor regions (21, 23). A first electric contact layer (31) is situated directly at the first semiconductor region (21) in places. Furthermore, a second electric contact layer (32) is situated directly at the second semiconductor region (23) in places, wherein the semiconductor regions (21, 23) are energized by way of the contact layers (31, 33). Furthermore, two metallic current leads (41, 43) and an insulation layer (5) are present. The insulation layer (5) covers the second semiconductor region (23) directly in places and rises over the latter. Further, the insulation layer (5) is situated below the current lead (43) for the second semiconductor region (23).Type: ApplicationFiled: July 13, 2016Publication date: July 12, 2018Inventor: Kai GEHRKE
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Publication number: 20180190874Abstract: A method for producing an optoelectronic semiconductor device and an optoelectronic semiconductor device are disclosed. In an embodiment the method includes providing a semiconductor layer sequence including a light-emitting and/or light-absorbing active zone and a top face downstream of the active zone in a stack direction extending perpendicular to a main plane of extension of the semiconductor layer sequence, applying a layer stack onto the top face, wherein the layer stack includes an oxide layer containing indium, and an intermediate face downstream of the top face in the stack direction and applying a contact layer onto the intermediate face, wherein the contact layer includes indium tin oxide, and wherein the layer stack is, within the bounds of manufacturing tolerances, free of tin.Type: ApplicationFiled: June 16, 2016Publication date: July 5, 2018Applicant: OSRAM Opto Semiconductors GmbHInventors: Simeon Katz, Kai Gehrke, Massimo Drago, Joachim Hertkorn
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Patent number: 10008649Abstract: A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.Type: GrantFiled: January 10, 2017Date of Patent: June 26, 2018Assignee: OSRAM Opto Semiconductors GmbHInventors: Korbinian Perzlmaier, Kai Gehrke, Robert Walter, Karl Engl, Guido Weiss, Markus Maute, Stefanie Rammelsberger
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Publication number: 20170148962Abstract: A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side and a mirror layer at least in regions at a rear side situated opposite the radiation exit area, a protective layer is arranged on the mirror layer, the protective layer includes a transparent conductive oxide, the mirror layer adjoins the semiconductor layer sequence at an interface situated opposite the protective layer, first and second layers, the first and second electrical connection layers face the rear side of the semiconductor layer sequence and are electrically insulated from one another, and a partial region of the second electrical connection layer extends from the rear side of the semiconductor layer sequence through at least one perforation of the active layer in a direction toward the front side.Type: ApplicationFiled: January 10, 2017Publication date: May 25, 2017Inventors: Korbinian Perzlmaier, Kai Gehrke, Robert Walter, Karl Engl, Guido Weiss, Markus Maute, Stefanie Rammelsberger
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Patent number: 9577165Abstract: A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side, the light emitting diode chip has a mirror layer at least in regions at a rear side situated opposite the radiation exit area, said mirror layer containing silver, a protective layer is arranged on the mirror layer, and the protective layer comprises a transparent conductive oxide.Type: GrantFiled: August 23, 2012Date of Patent: February 21, 2017Assignee: OSRAM Opto Semiconductor GmbHInventors: Korbinian Perzlmaier, Kai Gehrke, Robert Walter, Karl Engl, Guido Weiss, Markus Maute, Stefanie Rammelsberger
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Patent number: 9196789Abstract: A reflective contact layer system and a method for forming a reflective contact layer system for an optoelectronic component are disclosed. In an embodiment the component includes a first p-doped nitride compound semiconductor layer, a transparent conductive oxide layer, a minor layer and a second p-doped nitride compound semiconductor layer arranged between the first p-doped nitride compound semiconductor layer and the transparent conductive oxide layer, wherein the second p-doped nitride compound semiconductor layer has N-face domains at an interface facing the transparent conductive oxide layer, and wherein the N-face domains at the interface have an area proportion of at least 95%.Type: GrantFiled: July 24, 2013Date of Patent: November 24, 2015Assignees: OSRAM Opto Semiconductors GmbH, Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.Inventors: Matthias Peter, Simeon Katz, Jürgen Off, Korbinian Perzlmaier, Kai Gehrke, Rolf Aidam, Jürgen Däubler, Thorsten Passow
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Publication number: 20150270437Abstract: A reflective contact layer system and a method for forming a reflective contact layer system for an optoelectronic component are disclosed. In an embodiment the component includes a first p-doped nitride compound semiconductor layer, a transparent conductive oxide layer, a minor layer and a second p-doped nitride compound semiconductor layer arranged between the first p-doped nitride compound semiconductor layer and the transparent conductive oxide layer, wherein the second p-doped nitride compound semiconductor layer has N-face domains at an interface facing the transparent conductive oxide layer, and wherein the N-face domains at the interface have an area proportion of at least 95%.Type: ApplicationFiled: July 24, 2013Publication date: September 24, 2015Inventors: Matthias Peter, Simeon Katz, Jürgen Off, Korbinian Perzlmaier, Kai Gehrke, Rolf Aidam, Jürgen Däubler, Thorsten Passow
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Publication number: 20140319566Abstract: A light emitting diode chip includes a semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side, the light emitting diode chip has a mirror layer at least in regions at a rear side situated opposite the radiation exit area, said mirror layer containing silver, a protective layer is arranged on the mirror layer, and the protective layer comprises a transparent conductive oxide.Type: ApplicationFiled: August 23, 2012Publication date: October 30, 2014Applicant: OSRAM OPTO SEMICONDUCTORS GMBHInventors: Korbinian Perzlmaier, Kai Gehrke, Robert Walter, Karl Engl, Guido Weiss, Markus Maute, Stefanie Rammelsberger
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Patent number: 8816373Abstract: In at least one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence for generating an electromagnetic radiation, and also a silver mirror. The silver mirror is arranged at the semiconductor layer sequence. Oxygen is admixed with the silver of the silver mirror. A proportion by weight of the oxygen in the silver mirror is preferably at least 10?5 and furthermore preferably at most 10%.Type: GrantFiled: October 1, 2012Date of Patent: August 26, 2014Assignee: OSRAM Opto Semiconductors GmbHInventors: Kai Gehrke, Korbinian Perzlmaier, Richard Floeter, Christian Schmid