Patents by Inventor Kai-Gin Yang

Kai-Gin Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD OF REMOVING INSULATING LAYER ON SUBSTRATE
    Publication number: 20080261402
    Abstract: A method of removing an insulating layer on a substrate is described, including a first CMP process and a second CMP process performed in sequence, wherein the polishing slurry used in the first CMP process and that used in the second CMP process have substantially the same pH value that exceeds 7.0. A cleaning step is conducted between the first and the second CMP processes to remove a specific substance which would otherwise cause undesired particles to form in the second CMP process.
    Type: Application
    Filed: April 17, 2007
    Publication date: October 23, 2008
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: Chan Lu, Teng-Chun Tsai, Chih-Yueh Li, Kai-Gin Yang, Chien-Chung Huang, Chia-Hsi Chen, Tzu-Hui Wu
  • SOLUTION FOR FIXED ABRASIVE CHEMICAL MECHANICAL POLISHING PROCESS AND FIXED ABRASIVE CHEMICAL MECHANICAL POLISHING METHOD
    Publication number: 20080125018
    Abstract: A solution for fixed abrasive chemical mechanical polishing process including a protection constituent, a hydrolysis constituent and water is described. The protection constituent is used to protect a silicon nitride and its concentration is between 0.001 wt % and 10 wt %. The hydrolysis constituent is used to hydrolyze a silicon oxide and its concentration is between 0.001 wt % and 10 wt %. The concentration ofthe water is between 80 wt % and 99.998 wt %.
    Type: Application
    Filed: November 27, 2006
    Publication date: May 29, 2008
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: CHAN LU, TENG-CHUN TSAI, CHIH-YUEH LI, KAI-GIN YANG
  • CMP PROCESS OF HIGH SELECTIVITY
    Publication number: 20060252266
    Abstract: A CMP process of high selectivity is described. A substrate having a first material and a second material thereon is provided. A polishing pad that has multiple first grooves and multiple second grooves crossing the first grooves thereon is provided. The polishing pad and a high-selectivity slurry are then used together to polish the substrate, wherein the high-selectivity slurry has a higher selectivity to the first material than to the second material.
    Type: Application
    Filed: May 9, 2005
    Publication date: November 9, 2006
    Inventors: Chih-Yueh Lee, Kai-Gin Yang, Chun-Hsien Lin, Yung-Tsung Wei
  • METHOD FOR IMPROVING HSS CMP PERFORMANCE
    Publication number: 20060157450
    Abstract: Disclosed is a method for improving HSS CMP performance. After performing a HSS CMP process for a predetermined time, DI water is introduced and the polishing process is continued, so that the CMP rate and performance can be improved.
    Type: Application
    Filed: January 20, 2005
    Publication date: July 20, 2006
    Inventors: Hsin-Kun CHU, Teng-Chun Tsai, Kai-Gin Yang, Chihyueh Lee