Patents by Inventor Kai Hay Kwok
Kai Hay Kwok has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230006055Abstract: This disclosure relates to bipolar transistors, such as heterojunction bipolar transistors, having increased collector thickness for improved ruggedness. In some embodiments, the collector thickness can be above 1.1 microns. The collector can have at least one doping concentration grading. The collector can have a high doping concentration at a junction between the collector and the sub-collector, such as at the high end of the grading. In some embodiments, the high doping concentration can be above about 9×1016 cm?3. The collector can include a region with high doping concentration adjacent the base. The collector can include a discontinuity in the doping concentration, such as at the low end of the grading. Such bipolar transistors can be implemented, for example, in power amplifiers.Type: ApplicationFiled: June 29, 2022Publication date: January 5, 2023Inventors: Kai Hay Kwok, Cristian Cismaru, Andre G. Metzger, Guoliang Zhou
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Publication number: 20230006056Abstract: This disclosure relates to bipolar transistors, such as heterojunction bipolar transistors, having increased collector thickness for improved ruggedness. In some embodiments, the collector thickness can be above 1.1 microns. The collector can have at least one doping concentration grading. The collector can have a high doping concentration at a junction between the collector and the sub-collector, such as at the high end of the grading. In some embodiments, the high doping concentration can be above about 9×1016 cm?3. The collector can include a region with high doping concentration adjacent the base. The collector can include a discontinuity in the doping concentration, such as at the low end of the grading. Such bipolar transistors can be implemented, for example, in power amplifiers.Type: ApplicationFiled: June 29, 2022Publication date: January 5, 2023Inventors: Kai Hay Kwok, Cristian Cismaru, Andre G. Metzger, Guoliang Zhou
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Publication number: 20190386123Abstract: This disclosure relates to methods of forming bipolar transistors, such as heterojunction bipolar transistors. The methods may include forming a sub-collector over a substrate, forming a first portion of a collector over the sub-collector and doping a second portion of the collector to form a doping spike. The method may further include forming a third portion of the collector over the doping spike and forming a base of the bipolar transistor over the third portion of the collector.Type: ApplicationFiled: December 17, 2018Publication date: December 19, 2019Inventors: Peter J. ZAMPARDI, JR., Kai Hay KWOK
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Patent number: 10497495Abstract: Designs and methodologies related to attenuators having a thin-film resistor assembly are disclosed. In some embodiments, the thin-film assembly can include a first and second thin-film resistor, each having a main portion with an input end and an output end. The input end of the first thin-film resistor is interconnected to the input end of the second thin-film resistors, and the output end of the first thin-film resistor is interconnected to the output end of the second thin-film resistor. The first and second thin-film resistors are disposed relative to one another so as to define a separation. The separation region reduces the likelihood of hot spot regions forming at or near the center of the thin-film structure and improves power handling capability for a given resistor width. Also disclosed are examples of how the foregoing features can be implemented in different products and methods of fabrication.Type: GrantFiled: November 8, 2017Date of Patent: December 3, 2019Assignee: Skyworks Solutions, Inc.Inventors: Peter J. Zampardi, Jr., Kai Hay Kwok
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Patent number: 10158010Abstract: This disclosure relates to methods of forming bipolar transistors, such as heterojunction bipolar transistors. The methods may include forming a sub-collector over a substrate, forming a first portion of a collector over the sub-collector and doping a second portion of the collector to form a doping spike. The method may further include forming a third portion of the collector over the doping spike and forming a base of the bipolar transistor over the third portion of the collector.Type: GrantFiled: August 1, 2017Date of Patent: December 18, 2018Assignee: Skyworks Solutions, Inc.Inventors: Peter J. Zampardi, Jr., Kai Hay Kwok
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Publication number: 20180158579Abstract: Designs and methodologies related to attenuators having a thin-film resistor assembly are disclosed. In some embodiments, the thin-film assembly can include a first and second thin-film resistor, each having a main portion with an input end and an output end. The input end of the first thin-film resistor is interconnected to the input end of the second thin-film resistors, and the output end of the first thin-film resistor is interconnected to the output end of the second thin-film resistor. The first and second thin-film resistors are disposed relative to one another so as to define a separation. The separation region reduces the likelihood of hot spot regions forming at or near the center of the thin-film structure and improves power handling capability for a given resistor width. Also disclosed are examples of how the foregoing features can be implemented in different products and methods of fabrication.Type: ApplicationFiled: November 8, 2017Publication date: June 7, 2018Inventors: Peter J. Zampardi, JR., Kai Hay Kwok
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Publication number: 20170358667Abstract: This disclosure relates to methods of forming bipolar transistors, such as heterojunction bipolar transistors. The methods may include forming a sub-collector over a substrate, forming a first portion of a collector over the sub-collector and doping a second portion of the collector to form a doping spike. The method may further include forming a third portion of the collector over the doping spike and forming a base of the bipolar transistor over the third portion of the collector.Type: ApplicationFiled: August 1, 2017Publication date: December 14, 2017Inventors: Peter J. Zampardi, JR., Kai Hay Kwok
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Patent number: 9842674Abstract: Designs and methodologies related to attenuators having a thin-film resistor assembly are disclosed. In some embodiments, the thin-film assembly can include a first and second thin-film resistor, each having a main portion with an input end and an output end. The input end of the first thin-film resistor is interconnected to the input end of the second thin-film resistors, and the output end of the first thin-film resistor is interconnected to the output end of the second thin-film resistor. The first and second thin-film resistors are disposed relative to one another so as to define a separation. The separation region reduces the likelihood of hot spot regions forming at or near the center of the thin-film structure and improves power handling capability for a given resistor width. Also disclosed are examples of how the foregoing features can be implemented in different products and methods of fabrication.Type: GrantFiled: June 29, 2016Date of Patent: December 12, 2017Assignee: SKYWORKS SOLUTIONS, INC.Inventors: Peter J. Zampardi, Jr., Kai Hay Kwok
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Patent number: 9722058Abstract: This disclosure relates to bipolar transistors, such as heterojunction bipolar transistors, having at a doping spike in the collector. The doping spike can be disposed relatively near an interface between the collector and the base. For instance, the doping spike can be disposed within half of the thickness of the collector from the interface between the collector and the base. Such bipolar transistors can be implemented, for example, in power amplifiers.Type: GrantFiled: June 29, 2016Date of Patent: August 1, 2017Assignee: Skyworks Solutions, Inc.Inventors: Peter J. Zampardi, Jr., Kai Hay Kwok
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Publication number: 20170005184Abstract: This disclosure relates to bipolar transistors, such as heterojunction bipolar transistors, having at a doping spike in the collector. The doping spike can be disposed relatively near an interface between the collector and the base. For instance, the doping spike can be disposed within half of the thickness of the collector from the interface between the collector and the base. Such bipolar transistors can be implemented, for example, in power amplifiers.Type: ApplicationFiled: June 29, 2016Publication date: January 5, 2017Inventors: Peter J. ZAMPARDI, Jr., Kai Hay Kwok
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Publication number: 20160307671Abstract: Designs and methodologies related to attenuators having a thin-film resistor assembly are disclosed. In some embodiments, the thin-film assembly can include a first and second thin-film resistor, each having a main portion with an input end and an output end. The input end of the first thin-film resistor is interconnected to the input end of the second thin-film resistors, and the output end of the first thin-film resistor is interconnected to the output end of the second thin-film resistor. The first and second thin-film resistors are disposed relative to one another so as to define a separation. The separation region reduces the likelihood of hot spot regions forming at or near the center of the thin-film structure and improves power handling capability for a given resistor width. Also disclosed are examples of how the foregoing features can be implemented in different products and methods of fabrication.Type: ApplicationFiled: June 29, 2016Publication date: October 20, 2016Inventors: Peter J. Zampardi, JR., Kai Hay Kwok
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Patent number: 9406741Abstract: Designs and methodologies related to attenuators having a thin-film resistor assembly are disclosed. In some embodiments, the thin-film assembly can include a first and second thin-film resistor, each having a main portion with an input end and an output end. The input end of the first thin-film resistor is interconnected to the input end of the second thin-film resistors, and the output end of the first thin-film resistor is interconnected to the output end of the second thin-film resistor. The first and second thin-film resistors are disposed relative to one another so as to define a separation. The separation region reduces the likelihood of hot spot regions forming at or near the center of the thin-film structure and improves power handling capability for a given resistor width. Also disclosed are examples of how the foregoing features can be implemented in different products and methods of fabrication.Type: GrantFiled: November 30, 2011Date of Patent: August 2, 2016Assignee: SKYWORKS SOLUTIONS, INC.Inventors: Peter J. Zampardi, Jr., Kai Hay Kwok
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Patent number: 9385200Abstract: This disclosure relates to bipolar transistors, such as heterojunction bipolar transistors, having at a doping spike in the collector. The doping spike can be disposed relatively near an interface between the collector and the base. For instance, the doping spike can be disposed within half of the thickness of the collector from the interface between the collector and the base. Such bipolar transistors can be implemented, for example, in power amplifiers.Type: GrantFiled: May 22, 2015Date of Patent: July 5, 2016Inventors: Peter J. Zampardi, Jr., Kai Hay Kwok
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Publication number: 20150255550Abstract: This disclosure relates to bipolar transistors, such as heterojunction bipolar transistors, having at a doping spike in the collector. The doping spike can be disposed relatively near an interface between the collector and the base. For instance, the doping spike can be disposed within half of the thickness of the collector from the interface between the collector and the base. Such bipolar transistors can be implemented, for example, in power amplifiers.Type: ApplicationFiled: May 22, 2015Publication date: September 10, 2015Inventors: Peter J. Zampardi, JR., Kai Hay Kwok
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Patent number: 9070732Abstract: This disclosure relates to bipolar transistors, such as heterojunction bipolar transistors, having at a doping spike in the collector. The doping spike can be disposed relatively near an interface between the collector and the base. For instance, the doping spike can be disposed within half of the thickness of the collector from the interface between the collector and the base. Such bipolar transistors can be implemented, for example, in power amplifiers.Type: GrantFiled: April 25, 2013Date of Patent: June 30, 2015Assignee: Skyworks Solutions, Inc.Inventors: Peter J. Zampardi, Jr., Kai Hay Kwok
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Publication number: 20130285121Abstract: This disclosure relates to bipolar transistors, such as heterojunction bipolar transistors, having at a doping spike in the collector. The doping spike can be disposed relatively near an interface between the collector and the base. For instance, the doping spike can be disposed within half of the thickness of the collector from the interface between the collector and the base. Such bipolar transistors can be implemented, for example, in power amplifiers.Type: ApplicationFiled: April 25, 2013Publication date: October 31, 2013Inventors: Peter J. Zampardi, JR., Kai Hay Kwok
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Publication number: 20120171967Abstract: Designs and methodologies related to attenuators having a thin-film resistor assembly are disclosed. In some embodiments, the thin-film assembly can include a first and second thin-film resistor, each having a main portion with an input end and an output end. The input end of the first thin-film resistor is interconnected to the input end of the second thin-film resistors, and the output end of the first thin-film resistor is interconnected to the output end of the second thin-film resistor. The first and second thin-film resistors are disposed relative to one another so as to define a separation. The separation region reduces the likelihood of hot spot regions forming at or near the center of the thin-film structure and improves power handling capability for a given resistor width. Also disclosed are examples of how the foregoing features can be implemented in different products and methods of fabrication.Type: ApplicationFiled: November 30, 2011Publication date: July 5, 2012Applicant: Skyworks Solutions, Inc.Inventors: Peter J. Zampardi, JR., Kai Hay Kwok