Patents by Inventor Kai-Hsuan LEE

Kai-Hsuan LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11776855
    Abstract: A method of manufacturing a FinFET includes at last the following steps. A semiconductor substrate is patterned to form trenches in the semiconductor substrate and semiconductor fins located between two adjacent trenches of the trenches. Gate stacks is formed over portions of the semiconductor fins. Strained material portions are formed over the semiconductor fins revealed by the gate stacks. First metal contacts are formed over the gate stacks, the first metal contacts electrically connecting the strained material portions. Air gaps are formed in the FinFET at positions between two adjacent gate stacks and between two adjacent strained materials.
    Type: Grant
    Filed: December 13, 2022
    Date of Patent: October 3, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sai-Hooi Yeong, Kai-Hsuan Lee, Yu-Ming Lin, Chi-On Chui
  • Publication number: 20230275094
    Abstract: A method of forming a semiconductor device includes: forming a gate structure over a fin that protrudes above a substrate, the gate structure being surrounded by a first interlayer dielectric (ILD) layer; forming a trench in the first ILD layer adjacent to the fin; filling the trench with a first dummy material; forming a second ILD layer over the first ILD layer and the first dummy material; forming an opening in the first ILD layer and the second ILD layer, the opening exposing a sidewall of the first dummy material; lining sidewalls of the opening with a second dummy material; after the lining, forming a conductive material in the opening; after forming the conductive material, removing the first and the second dummy materials from the trench and the opening, respectively; and after the removing, sealing the opening and the trench by forming a dielectric layer over the second ILD layer.
    Type: Application
    Filed: May 5, 2023
    Publication date: August 31, 2023
    Inventors: Kai-Hsuan Lee, Sai-Hooi Yeong, Chi On Chui
  • Publication number: 20230268411
    Abstract: A semiconductor structure includes a substrate, nanostructures over the substrate, and a gate structure wrapping around the nanostructures. The gate structure includes a gate dielectric layer and a gate electrode wrapping around the gate dielectric layer. The semiconductor structure further includes a source/drain feature in contact with the nanostructures, a contact etch stop layer over the source/drain feature, and a seal layer over the air spacer and the gate structure, and on a sidewall of the contact etch stop layer. The contact etch stop layer is separated from the gate structure by an air spacer.
    Type: Application
    Filed: February 23, 2022
    Publication date: August 24, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kai-Hsuan LEE, Shih-Che LIN, Po-Yu HUANG, Shih-Chieh WU, I-Wen WU, Chen-Ming LEE, Fu-Kai YANG, Mei-Yun WANG
  • Patent number: 11735471
    Abstract: A semiconductor structure includes a fin structure formed over a substrate. The structure also includes a gate structure formed across the fin structure. The structure also includes source/drain epitaxial structures formed on opposite sides of the gate structure. The structure also includes an inter-layer dielectric (ILD) structure formed over the gate structure. The structure also includes a contact blocking structure formed through the ILD structure over the source/drain epitaxial structure. A lower portion of the contact blocking structure is surrounded by an air gap, and the air gap is covered by a portion of the ILD structure.
    Type: Grant
    Filed: April 8, 2021
    Date of Patent: August 22, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chia-Ta Yu, Kai-Hsuan Lee, Sai-Hooi Yeong, Yen-Chieh Huang, Feng-Cheng Yang
  • Patent number: 11735641
    Abstract: Semiconductor device and the manufacturing method thereof are disclosed herein. An exemplary semiconductor device comprises a semiconductor fin formed on a substrate; and a gate structure disposed over a channel region of the semiconductor fin, the gate structure including a gate dielectric layer and a gate electrode, wherein the gate dielectric layer includes a bottom portion and a side portion, and the gate electrode is separated from the side portion of the gate dielectric layer by a first air gap.
    Type: Grant
    Filed: November 23, 2021
    Date of Patent: August 22, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chien Ning Yao, Kai-Hsuan Lee, Sai-Hooi Yeong, Wei-Yang Lee, Kuan-Lun Cheng, Chih-Hao Wang
  • Publication number: 20230261068
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a source/drain region formed in a semiconductor substrate, a source/drain contact structure formed over the source/drain region, and a gate electrode layer formed adjacent to the source/drain contact structure. The semiconductor device structure also includes a first spacer and a second spacer laterally and successively arranged from the sidewall of the gate electrode layer to the sidewall of the source/drain contact structure. The semiconductor device structure further includes a silicide region formed in the source/drain region. The top width of the silicide region is greater than the bottom width of the source/drain contact structure and less than the top width of the source/drain region.
    Type: Application
    Filed: February 15, 2022
    Publication date: August 17, 2023
    Inventors: Kai-Hsuan LEE, Shih-Che LIN, Po-Yu HUANG, Shih-Chieh WU, I-Wen WU, Chen-Ming LEE, Fu-Kai YANG, Mei-Yun WANG
  • Publication number: 20230215761
    Abstract: A memory device includes first transistor over a semiconductor substrate, wherein the first transistor includes a first word line extending over the semiconductor substrate; a second transistor over the semiconductor substrate, wherein the second transistor includes a second word line extending over the first word line; a first air gap extending between the first word line and the second word line; a memory film extending along and contacting the first word line and the second word line; a channel layer extending along the memory film; a source line extending along the channel layer, wherein the memory film is between the source line and the word line; a bit line extending along the channel layer, wherein the memory film is between the bit line and the word line; and an isolation region between the source line and the bit line.
    Type: Application
    Filed: March 6, 2023
    Publication date: July 6, 2023
    Inventors: Sheng-Chen Wang, Kai-Hsuan Lee, Sai-Hooi Yeong, Chia-Ta Yu, Han-Jong Chia
  • Patent number: 11682675
    Abstract: A method of forming a semiconductor device includes: forming a gate structure over a fin that protrudes above a substrate, the gate structure being surrounded by a first interlayer dielectric (ILD) layer; forming a trench in the first ILD layer adjacent to the fin; filling the trench with a first dummy material; forming a second ILD layer over the first ILD layer and the first dummy material; forming an opening in the first ILD layer and the second ILD layer, the opening exposing a sidewall of the first dummy material; lining sidewalls of the opening with a second dummy material; after the lining, forming a conductive material in the opening; after forming the conductive material, removing the first and the second dummy materials from the trench and the opening, respectively; and after the removing, sealing the opening and the trench by forming a dielectric layer over the second ILD layer.
    Type: Grant
    Filed: May 20, 2021
    Date of Patent: June 20, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kai-Hsuan Lee, Sai-Hooi Yeong, Chi On Chui
  • Publication number: 20230123292
    Abstract: A method of manufacturing a FinFET includes at last the following steps. A semiconductor substrate is patterned to form trenches in the semiconductor substrate and semiconductor fins located between two adjacent trenches of the trenches. Gate stacks is formed over portions of the semiconductor fins. Strained material portions are formed over the semiconductor fins revealed by the gate stacks. First metal contacts are formed over the gate stacks, the first metal contacts electrically connecting the strained material portions. Air gaps are formed in the FinFET at positions between two adjacent gate stacks and between two adjacent strained materials.
    Type: Application
    Filed: December 13, 2022
    Publication date: April 20, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sai-Hooi Yeong, Kai-Hsuan Lee, Yu-Ming Lin, Chi-On Chui
  • Patent number: 11610841
    Abstract: Methods and devices for forming a conductive line disposed over a substrate. A first dielectric layer is disposed over the substrate and coplanar with the conductive line. A second dielectric layer disposed over the conductive line and a third dielectric layer disposed over the first dielectric layer. A via extends through the second dielectric layer and is coupled to the conductive line. The second dielectric layer and the third dielectric layer are coplanar and the second and third dielectric layers have a different composition. In some embodiments, the second dielectric layer is selectively deposited on the conductive line.
    Type: Grant
    Filed: December 20, 2019
    Date of Patent: March 21, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chia-Ta Yu, Kai-Hsuan Lee, Yen-Ming Chen, Chi On Chui, Sai-Hooi Yeong
  • Patent number: 11600520
    Abstract: A memory device includes first transistor over a semiconductor substrate, wherein the first transistor includes a first word line extending over the semiconductor substrate; a second transistor over the semiconductor substrate, wherein the second transistor includes a second word line extending over the first word line; a first air gap extending between the first word line and the second word line; a memory film extending along and contacting the first word line and the second word line; a channel layer extending along the memory film; a source line extending along the channel layer, wherein the memory film is between the source line and the word line; a bit line extending along the channel layer, wherein the memory film is between the bit line and the word line; and an isolation region between the source line and the bit line.
    Type: Grant
    Filed: January 27, 2021
    Date of Patent: March 7, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Sheng-Chen Wang, Kai-Hsuan Lee, Sai-Hooi Yeong, Chia-Ta Yu, Han-Jong Chia
  • Publication number: 20230068664
    Abstract: A method includes forming a gate structure on a substrate, forming a seal spacer covering a sidewall of the gate structure, forming a sacrificial spacer covering a sidewall of the seal spacer, forming source/drain regions sandwiching a channel region that is under the gate structure, and depositing a contact etch stop layer covering a sidewall of the sacrificial spacer. The method further includes removing the sacrificial spacer to form a trench, wherein the trench exposes a sidewall of the contact etch stop layer and the sidewall of the seal spacer, and depositing an inter-layer dielectric layer, wherein the inter-layer dielectric layer caps the trench, thereby defining an air gap inside the trench.
    Type: Application
    Filed: August 31, 2021
    Publication date: March 2, 2023
    Inventors: Kai-Hsuan Lee, Chen-Ming Lee, Fu-Kai Yang, Mei-Yun Wang, Yen-Ming Chen
  • Publication number: 20230067455
    Abstract: A device includes a semiconductor substrate; a word line extending over the semiconductor substrate; a memory film extending along the word line, wherein the memory film contacts the word line; a channel layer extending along the memory film, wherein the memory film is between the channel layer and the word line; source lines extending along the memory film, wherein the memory film is between the source lines and the word line; bit lines extending along the memory film, wherein the memory film is between the bit lines and the word line; and isolation regions, wherein each isolation region is between a source line and a bit line, wherein each of the isolation regions includes an air gap and a seal extending over the air gap.
    Type: Application
    Filed: August 30, 2021
    Publication date: March 2, 2023
    Inventors: Sheng-Chen Wang, Kai-Hsuan Lee, Sai-Hooi Yeong, Chi On Chui
  • Publication number: 20230048829
    Abstract: Semiconductor structures and methods are provided. An exemplary method according to the present disclosure includes receiving a fin-shaped structure comprising a first channel region and a second channel region, a first and a second dummy gate structures disposed over the first and the second channel regions, respectively. The method also includes removing a portion of the first dummy gate structure, a portion of the first channel region and a portion of the substrate under the first dummy gate structure to form a trench, forming a hybrid dielectric feature in the trench, removing a portion of the hybrid dielectric feature to form an air gap, sealing the air gap, and replacing the second dummy gate structure with a gate stack after sealing the air gap.
    Type: Application
    Filed: August 13, 2021
    Publication date: February 16, 2023
    Inventors: Kai-Hsuan Lee, Shih-Che Lin, Po-Yu Huang, Shih-Chieh Wu, I-Wen Wu, Chen-Ming Lee, Fu-Kai Yang, Mei-Yun Wang
  • Patent number: 11557517
    Abstract: A method of manufacturing a FinFET includes at last the following steps. A semiconductor substrate is patterned to form trenches in the semiconductor substrate and semiconductor fins located between two adjacent trenches of the trenches. Gate stacks is formed over portions of the semiconductor fins. Strained material portions are formed over the semiconductor fins revealed by the gate stacks. First metal contacts are formed over the gate stacks, the first metal contacts electrically connecting the strained material portions. Air gaps are formed in the FinFET at positions between two adjacent gate stacks and between two adjacent strained materials.
    Type: Grant
    Filed: July 29, 2021
    Date of Patent: January 17, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sai-Hooi Yeong, Kai-Hsuan Lee, Yu-Ming Lin, Chi-On Chui
  • Publication number: 20230008128
    Abstract: A method includes depositing an interlayer dielectric (ILD) over a source/drain region, implanting impurities into a portion of the ILD, recessing the portion of the ILD to form a trench, forming spacers on sidewalls of the trench, the spacers including a spacer material, forming a source/drain contact in the trench and removing the spacers and the portion of the ILD with an etching process to form an air-gap, the air-gap disposed under and along sidewalls of the source/drain contact, where the etching process selectively etches the spacer material and the impurity.
    Type: Application
    Filed: February 23, 2022
    Publication date: January 12, 2023
    Inventors: Sai-Hooi Yeong, Kai-Hsuan Lee, Chi On Chui
  • Publication number: 20220384442
    Abstract: A semiconductor device includes a gate stack, an epitaxy structure, a first spacer, a second spacer, and a dielectric residue. The gate stack is over a substrate. The epitaxy structure is formed raised above the substrate. The first spacer is on a sidewall of the gate stack. The first spacer and the epitaxy structure define a void therebetween. The second spacer seals the void between the first spacer and the epitaxy structure. The dielectric residue is in the void and has an upper portion and a lower portion under the upper portion. The upper portion of the dielectric residue has a silicon-to-nitrogen atomic ratio higher than a silicon-to-nitrogen atomic ratio of the lower portion of the dielectric residue.
    Type: Application
    Filed: August 10, 2022
    Publication date: December 1, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Bo-Yu LAI, Kai-Hsuan LEE, Wei-Yang LEE, Feng-Cheng YANG, Yen-Ming CHEN
  • Publication number: 20220367623
    Abstract: A semiconductor device structure includes nanostructures formed over a substrate. The structure also includes a gate structure formed over and around the nanostructures. The structure also includes a spacer layer formed over a sidewall of the gate structure over the nanostructures. The structure also includes a source/drain epitaxial structure formed adjacent to the spacer layer. The structure also includes a contact structure formed over the source/drain epitaxial structure with an air spacer formed between the spacer layer and the contact structure.
    Type: Application
    Filed: November 19, 2021
    Publication date: November 17, 2022
    Inventors: Kai-Hsuan Lee, Shih-Che Lin, Po-Yu Huang, Shih-Chieh Wu, I-Wen Wu, Chen-Ming Lee, Fu-Kai Yang, Mei-Yun Wang
  • Publication number: 20220359755
    Abstract: A device includes a fin extending from a semiconductor substrate; a gate stack over the fin; a first spacer on a sidewall of the gate stack; a source/drain region in the fin adjacent the first spacer; an inter-layer dielectric layer (ILD) extending over the gate stack, the first spacer, and the source/drain region, the ILD having a first portion and a second portion, wherein the second portion of the ILD is closer to the gate stack than the first portion of the ILD; a contact plug extending through the ILD and contacting the source/drain region; a second spacer on a sidewall of the contact plug; and an air gap between the first spacer and the second spacer, wherein the first portion of the ILD extends across the air gap and physically contacts the second spacer, wherein the first portion of the ILD seals the air gap.
    Type: Application
    Filed: July 20, 2022
    Publication date: November 10, 2022
    Inventors: Su-Hao Liu, Kuo-Ju Chen, Kai-Hsuan Lee, I-Hsieh Wong, Cheng-Yu Yang, Liang-Yin Chen, Huicheng Chang, Yee-Chia Yeo, Syun-Ming Jiang, Meng-Han Chou
  • Publication number: 20220359683
    Abstract: A FinFET device structure is provided. The FinFET device structure includes a fin structure formed over a substrate, and a first inter-layer dielectric (ILD) layer formed over the fin structure. The FinFET device structure includes a gate structure formed in the first ILD layer, and a first S/D contact structure formed in the first ILD layer and adjacent to the gate structure. The FinFET device structure also includes a first air gap formed on a sidewall of the first S/D contact structure, and the first air gap is in direct contact with the first ILD layer.
    Type: Application
    Filed: May 6, 2021
    Publication date: November 10, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kai-Hsuan LEE, I-Wen WU, Chen-Ming LEE, Jian-Hao CHEN, Fu-Kai YANG, Feng-Cheng YANG, Mei-Yun WANG, Yen-Ming CHEN