Abstract: The present invention relates to a charge-pumping circuit for low-supply voltage. A small charge-pumping circuit was added at the gates of the original Dickson charge-pumping circuit's each stage for bias voltage and the first transistor group was added between well and gate. The second transistor group was added between the gate and drain of original transistor. Thus, the charge-pumping circuit for low-supply voltage can supply a higher positive or negative voltage.

Abstract: The present invention relates to a charge-pumping circuit for low-supply voltage. A small charge-pumping circuit was added at the gates of the original Dickson charge-pumping circuit's each stage for bias voltage and the first transistor group was added between well and gate. The second transistor group was added between the gate and drain of original trans0istor. Thus, the charge-pumping circuit for low-supply voltage can supply a higher positive or negative voltage.

Abstract: A semiconductor integrated circuit includes a first charge pumping circuit connected to an input node. The first charge pump circuit includes a plurality of first driving transistors and charges an input voltage at the input node to a control voltage. A second charge pumping circuit includes a plurality of second driving transistors that each receive the control voltage from the first charge pump. The received control voltage controls the driving of the second transistors when charging an output node to an output voltage. To eliminate body effects, the semiconductor integrated circuit further includes a plurality of body transistors that connect the source and body terminals of the driving transistors.