Abstract: A VCSEL system includes a tunable VCSEL laser with one or more active regions having quantum wells and barriers. The one or more active regions surrounded by one or more p-n junctions. The one or more active regions can include one or more tunnel junctions (TJ), and one or more apertures One or more buried tunnel junctions (BTJ) or oxide confine apertured, additional TJ's. Planar structures and or additional BTJ's, created during a regrowth process, are independent of a first growth process. The VCSEL has an HCG grading. The VCSEL includes a sacrificial layer.

Abstract: A light emitting apparatus includes a VCSEL laser. The VCSEL laser has one or more active regions with quantum wells and barriers. The active regions are surrounded by one or more p-n junctions. The one or more active regions can include a selected shape structure, as well as one or more tunnel junctions (TJ). One or more apertures are provided with the selected shape structure. One or more buried tunnel junctions (BTJ) or oxide confine apertured, additional TJ's, planar structures and or additional BTJ's are created during a regrowth process that is independent of a first growth process. A VCSEL output is determined in response to a monitoring application of the VCSEL. The VCSEL has an HCG grating and a bottom DBR. An etched post is between an active region and a sacrificial layer.

Abstract: Devices are provided with integration for half a VCSEL to a top mirror, with the heterogeneous integration of a half-VCSEL to a Si sub mount.

Abstract: A transceiver module includes a VCSEL laser with one or more active regions having quantum wells and barriers. The one or more active regions are surrounded by one or more p-n junctions. The one or more active regions can include a selected shape structure, one or more tunnel junctions (TJ), one or more apertures with the selected shape structure, one or more buried tunnel junctions (BTJ) or oxide confine apertured. Additional TJ's, planar structures and or additional BTJ's are created during a regrowth process that is independent of a first growth process. The VCSEL laser has an HCG grading and a bottom DBR. The transceiver module is configured to convert optical signals into electrical signals.

Abstract: An SOA is coupled to an optical fiber including a tunable VCSEL laser with one or more active regions having quantum wells and barriers. The one or more active regions are surrounded by one or more p-n junctions. The one or more active regions can include a selected shape structure, and one or more tunnel junctions (TJ). One or more apertures are provided with the selected shape structure, one or more buried tunnel junctions (BTJ) or oxide confine apertured, additional TJ's, planar structures and or additional BTJ's created during a regrowth process that is independent of a first growth process,. the VCSEL having an HCG grading. An optical fiber is included as is at least one of an ASIC and driver controller coupled to the VCSEL laser.

Abstract: A VCSEL system includes a tunable VCSEL laser with one or more active regions having quantum wells and barriers. The one or more active regions surrounded by one or more p-n junctions. The one or more active regions can include one or more tunnel junctions (TJ), and one or more apertures One or more buried tunnel junctions (BTJ) or oxide confine apertured, additional TJ's. Planar structures and or additional BTJ's, created during a regrowth process, are independent of a first growth process. The VCSEL has an HCG grading. The VCSEL includes a sacrificial layer.

Abstract: A VCSEL laser has one or more active regions having quantum wells and barriers. The active regions surrounded by one or more p-n junctions. The one or more active regions can include a selected shape structure, as well as one or more tunnel junctions (TJ). One or more apertures are provided with the selected shape structure, one or more buried tunnel junctions (BTJ) or oxide confine apertured. Additional TJ's, planar structures and or additional BTJ's are created during a regrowth process that is independent of a first growth process with a VCSEL output determined in response to a monitoring application of the VCSEL. The VCSEL has an HCG grating and a bottom DBR. A final thickness of an oxide layer different than an epitaxial growth of AlGaAs.

Abstract: A VCSEL laser has one or more active regions with quantum wells and barriers. The active regions are surrounded by one or more p-n junctions. The one or more active regions can include a selected shape structure, as well as one or more tunnel junctions (TJ). One or more apertures are provided with the selected shape structure. One or more buried tunnel junctions (BTJ) or oxide confine apertures, additional TJ's, planar structures and or additional BTJ's created during a regrowth process that is independent of a first growth process are provided. A VCSEL output is determined in response to a monitoring application of the VCSEL. The VCSEL has an HCG grating and a bottom DBR. A mesa is located within either at a lower mirror layers or an upper mirror layers. The mesa has a lateral dimension that is less than a lateral dimension of the one or more lower mirror layers or the one or more upper mirror layers, respectively.

Abstract: Provided are computing systems, methods, and platforms that rank text with pairwise ranking prompting using a generative sequence processing model. A prompt comprising a query and sets of text associated with candidate results can be generated. The generative sequence processing model can be prompted with the prompt and perform pairwise comparisons between the sets of text in the prompt based on the query in the prompt. An output can be generated that ranks the sets of text in response to the query.

Abstract: An (SOA) system includes a tunable VCSEL laser with one or more active regions having quantum wells and barriers. The one or more active regions are surrounded by one or more p-n junctions. The one or more active regions can include a selected shape structure, one or more tunnel junctions (TJ), one or more apertures provided with the selected shape structure, one or more buried tunnel junctions (BTJ) or oxide confine apertured, additional TJ's, planar structures and or additional BTJ's created during a regrowth process that is independent of a first growth process, the VCSEL having an HCG grading. At least one of an ASIC and driver controller coupled to the VCSEL laser, the ASIC monitoring an output of a light pulse over wavelength.

Abstract: A VCSEL epitaxial structure includes an etched post between an active region and a sacrificial layer. Aa regrowth of sacrificial layer and HCG layer are around the etched post. providing a fully epitaxial grown tunable VCSEL with a small cavity volume, lateral electrical current and optical confinement. The etched post and regrowth provide lateral current and optical confinement, small volume and increased efficiency for more demanding applications, such as very high-speed modulation and coherent communication.

Abstract: A light emitting device has a first mirror; and one or more active regions with a first active region adjacent to the first mirror. Each of active region includes quantum wells and barriers, and is surrounded by one or more p-n junctions. The active regions have a selected shape structure each with a tunnel junction (TJ). One or more apertures are provided with the selected shape structure; one or more buried tunnel junctions (BTJ), additional TJ's, planar structures and/or additional BTJ's, created during a regrowth process that is independent of a first growth process of the first mirror as well as the active region and the one or more TJs. One or more electrical confinement apertures are defined by the one or more BTJ's, additional TJ's, planar structures and/or additional BTJ's. A vertical resonator cavity is disposed over the electrical confinement aperture. A high contrast grating (HCG) operates as a second mirror positioned over the vertical resonator cavity.

Abstract: An (SOA) system includes a tunable VCSEL laser with one or more active regions having quantum wells and barriers. The one or more active regions are surrounded by one or more p-n junctions. The one or more active regions can include a selected shape structure, one or more tunnel junctions (TJ), one or more apertures provided with the selected shape structure, one or more buried tunnel junctions (BTJ) or oxide confine apertured, additional TJ's, planar structures and or additional BTJ's created during a regrowth process that is independent of a first growth process, the VCSEL having an HCG grading. At least one of an ASIC and driver controller coupled to the VCSEL laser, the ASIC monitoring an output of a light pulse over wavelength.

Abstract: A light emitting device has a first mirror; and one or more active regions with a first active region adjacent to the first mirror. Each of active region includes quantum wells and barriers, and is surrounded by one or more p-n junctions. The active regions have a selected shape structure each with a tunnel junction (TJ). One or more apertures are provided with the selected shape structure; one or more buried tunnel junctions (BTJ), additional TJ's, planar structures and/or additional BTJ's, created during a regrowth process that is independent of a first growth process of the first mirror as well as the active region and the one or more TJs. One or more electrical confinement apertures are defined by the one or more BTJ's, additional TJ's, planar structures and/or additional BTJ's. A vertical resonator cavity is disposed over the electrical confinement aperture. A high contrast grating (HCG) operates as a second mirror positioned over the vertical resonator cavity.

Abstract: A novel method of preventing vehicle rollover by shifting center of mass (COM). Shifting 23% of a vehicle's total vehicle weight can increase the rollover impact energy threshold by 4 times on a scaled prototype SUV built in the research. This design can be implemented on commercial vehicles and greatly reduce the probability of vehicle rollover. Moreover, existing parts on the vehicle such as the battery on an electric vehicle can be used as the mobile weight to shift COM.