Patents by Inventor Kai KAN

Kai KAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250126855
    Abstract: Methods for forming a gate structure of a multi-gate device are provided. An example method includes depositing a gate dielectric layer over first nanostructures over a first region of a substrate and second nanostructures over a second region of the substrate, depositing a first work function metal (WFM) layer over the first nanostructures and the second nanostructures, depositing a first hard mask (HM) layer over the first WFM layer, selectively removing the first HM layer and the first WFM layer over the first region, selectively removing the first HM layer over the second region, depositing a second WFM layer over the substrate, depositing a second HM layer over the second WFM layer, selectively removing the second HM layer and the second WFM layer over the first region, selectively removing the second HM layer over the second region, and depositing a third WFM layer over the substrate.
    Type: Application
    Filed: October 12, 2023
    Publication date: April 17, 2025
    Inventors: Ming-Huei Lin, Kai-Yuan Cheng, Chih-Pin Tsao, Hsing-Kan Peng, Shih-Hsun Chang, Shu-Hui Wang, Jeng-Ya Yeh
  • Publication number: 20250095997
    Abstract: A method of forming a semiconductor device includes depositing a target metal layer in an opening. Depositing the target metal layer comprises performing a plurality of deposition cycles. An initial deposition cycle of the plurality of deposition cycles comprises: flowing a first precursor in the opening, flowing a second precursor in the opening after flowing the first precursor, and flowing a reactant in the opening. The first precursor attaches to upper surfaces in the opening, and the second precursor attaches to remaining surfaces in the opening. The first precursor does not react with the second precursor, and the reactant reacts with the second precursor at a greater rate than the reactant reacts with the first precursor.
    Type: Application
    Filed: March 11, 2024
    Publication date: March 20, 2025
    Inventors: Kai-Chieh Yang, Kuan-Kan Hu, Wei-Yen Woon, Ku-Feng Yang, Szuya Liao
  • Patent number: 10711097
    Abstract: A polylactide derivative according to the present invention is expressed by the following general formula (1) or general formula (2): In general formula (1), one of X1-X5 is an aldehyde group, one of the other four is an alkoxy group, and the other three are hydrogen atoms. In general formula (2), one of R1-R3 is selected from a chlorine atom, fluorine atom, aldehyde group, alkoxy group, alkyl group and ester, while the other two are selected from the chlorine atom, fluorine atom, aldehyde group, alkoxy group, alkyl group, ester, and hydrogen atom.
    Type: Grant
    Filed: July 14, 2016
    Date of Patent: July 14, 2020
    Assignee: NATIONAL UNIVERSITY CORPORATION NARA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Hiroharu Ajiro, Kai Kan, Mitsuru Akashi
  • Publication number: 20180215867
    Abstract: A polylactide derivative according to the present invention is expressed by the following general formula (1) or general formula (2): In general formula (1), one of X1-X5 is an aldehyde group, one of the other four is an alkoxy group, and the other three are hydrogen atoms. In general formula (2), one of R1-R3 is selected from a chlorine atom, fluorine atom, aldehyde group, alkoxy group, alkyl group and ester, while the other two are selected from the chlorine atom, fluorine atom, aldehyde group, alkoxy group, alkyl group, ester, and hydrogen atom.
    Type: Application
    Filed: July 14, 2016
    Publication date: August 2, 2018
    Applicant: NATIONAL UNIVERSITY CORPORATION NARA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Hiroharu AJIRO, Kai KAN, Mitsuru AKASHI