Abstract: An integrated motor and drive assembly is disclosed and includes a housing, a motor and a drive. The housing includes a motor-accommodation portion and a drive-accommodation portion. The drive includes a power board and a control board. The power board is made of a high thermal conductivity substrate and includes a power element and an encoder disposed on the first side, the first side faces the motor, the power board and the motor are stacked along a first direction, and the second side contacts the housing to from a heat-dissipating route. The control board is disposed adjacent to the power board. The control board and the power board are arranged along a second direction perpendicular to the first direction, and the first direction is parallel to an axial direction of the motor. A part of the power board and a part of the control board are directly contacted to form an electrical connection.

Abstract: The present disclosure is generally related to 3D imaging capable OLED displays. A light field display comprises an array of 3D light field pixels, each of which comprises an array of corrugated OLED pixels, a metasurface layer disposed adjacent to the array of 3D light field pixels, and a plurality of median layers disposed between the metasurface layer and the corrugated OLED pixels. Each of the corrugated OLED pixels comprises primary or non-primary color subpixels, and produces a different view of an image through the median layers to the metasurface to form a 3D image. The corrugated OLED pixels combined with a cavity effect reduce a divergence of emitted light to enable effective beam direction manipulation by the metasurface. The metasurface having a higher refractive index and a smaller filling factor enables the deflection and direction of the emitted light from the corrugated OLED pixels to be well controlled.

Abstract: Embodiments of the present disclosure relate to a FinFET device having gate spacers with reduced capacitance and methods for forming the FinFET device. Particularly, the FinFET device according to the present disclosure includes gate spacers formed by two or more depositions. The gate spacers are formed by depositing first and second materials at different times of processing to reduce parasitic capacitance between gate structures and contacts introduced after epitaxy growth of source/drain regions.

Abstract: Epitaxial source/drain structures for enhancing performance of multigate devices, such as fin-like field-effect transistors (FETs) or gate-all-around (GAA) FETs, and methods of fabricating the epitaxial source/drain structures, are disclosed herein. An exemplary device includes a dielectric substrate. The device further includes a channel layer, a gate disposed over the channel layer, and an epitaxial source/drain structure disposed adjacent to the channel layer. The channel layer, the gate, and the epitaxial source/drain structure are disposed over the dielectric substrate. The epitaxial source/drain structure includes an inner portion having a first dopant concentration and an outer portion having a second dopant concentration that is less than the first dopant concentration. The inner portion physically contacts the dielectric substrate, and the outer portion is disposed between the inner portion and the channel layer. In some embodiments, the outer portion physically contacts the dielectric substrate.

Abstract: Methods and devices including an air gap adjacent a contact element extending to a source/drain feature of a device are described. Some embodiments of the method include depositing a dummy layer, which is subsequently removed to form the air gap. The dummy layer and subsequent air gap may be formed after a SAC dielectric layer such as silicon nitride is formed over an adjacent metal gate structure.

Abstract: A sealing mechanism is provided, including a housing, a groove, and a sealing element. The housing includes a first member and a second member, and the groove is formed between the first and second members. The sealing element is formed in the groove by Low Pressure Molding (LPM) and surrounds at least one of the first and second members.

Abstract: In an embodiment, a device includes: a gate electrode; a epitaxial source/drain region adjacent the gate electrode; one or more inter-layer dielectric (ILD) layers over the epitaxial source/drain region; a first source/drain contact extending through the ILD layers, the first source/drain contact connected to the epitaxial source/drain region; a contact spacer surrounding the first source/drain contact; and a void disposed between the contact spacer and the ILD layers.

Abstract: Disclosed is a kingpin assembly comprising a receiver housing, a collet sleeve in the receiver housing, a kingpin in the collet, a spring on the kingpin, a retainer cap on the spring, and a plurality of connectors connecting the receiver housing to the retainer cap. In one embodiment, the retainer cap exerts a pressure against the spring which in turn exerts pressure to a top of the king pin pressing the king pin and collet towards a bottom of the receiver housing.

Abstract: A battery pack includes a group of cells, a current path switch coupled to the group of cells, and a current monitoring system. The current monitoring system includes a signal detection unit, a logic unit and a current path control unit. The signal detection unit is coupled to the group of cells and/or a positive terminal of the battery pack, and used to detect at least one voltage signal of the group of cells and/or of the positive terminal of the battery pack. The logic unit is coupled to the signal detection unit, and used to generate a calculated value of a voltage signal of the at least one voltage signal and generate a logic signal according to the calculated value. The current path control unit is coupled to the logic unit and the current path switch, and used to control the current path switch according to the logic signal.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first diffusion barrier layer made of a dielectric material including a metal element, nitrogen, and oxygen and a first protection layer made of a dielectric material including silicon and oxygen and in direct contact with the top surface of the first diffusion barrier layer. The semiconductor device structure also includes a first thickening layer made of a dielectric material including the metal element and oxygen and in direct contact with the top surface of the first protection layer. A maximum metal content in the first thickening layer is greater than that in the first diffusion barrier layer. The semiconductor device structure further includes a conductive feature surrounded by and in direct contact with the first diffusion barrier layer, the first protection layer, and the first thickening layer.

Abstract: A processing method of a single crystal material includes the following steps. A single crystal material is provided as an object to be modified. The amorphous phase modification apparatus is used for emitting a femtosecond laser beam to process an internal portion of the object to be modified. The processing includes using a femtosecond laser beam to form a plurality of processing lines in the internal portion of the object to be modified, wherein each of the processing lines include a zigzag pattern processing, and a processing line spacing between the plurality of processing lines is in a range of 200 ?m to 600 ?m, wherein after the object to be modified is processed, a modified layer is formed in the object to be modified. Slicing or separating out a portion in the object to be modified that includes the modified layer.

Abstract: A motor control apparatus receives a DC power source through a DC terminal and is coupled to a motor. The motor control apparatus includes a brake, an inverter, and a controller. The brake is coupled to the inverter. The brake includes an energy-consuming component and a switch component. The controller controls the inverter to convert the DC power source to drive the motor. When the controller determines that the DC power source is interrupted, the controller stops controlling the inverter, and the switch component is self-driven turned on so that a back electromotive force generated by the motor is consumed through the energy-consuming component.

Abstract: A method includes depositing a first dielectric layer over a first conductive feature, depositing a first mask layer over the first dielectric layer, and depositing a second mask layer over the first mask layer. A first opening is patterned in the first mask layer and the second mask layer, the first opening having a first width. A second opening is patterned in a bottom surface of the first opening, the second opening extending into the first dielectric layer, the second opening having a second width. The second width is less than the first width. The first opening is extended into the first dielectric layer and the second opening is extended through the first dielectric layer to expose a top surface of the first conductive feature.

Abstract: An electronic device includes a light emitting layer, a light conversion layer and an adjustable structure. The light emitting layer has a plurality of light emitting units for emitting light. The light conversion layer converts the wavelength of the light emitted by at least one light emitting unit to provide converted light. The adjustable structure is controlled to adjust a light penetrating area to correspond to the affected part to be treated, wherein at least one of the light and the converted light passes through the light penetrating area to irradiate the affected part.

Abstract: A palm recognition device is provided, and belongs to the field of the electronic device technologies. The palm recognition device includes a housing, a PCB, and a camera. The PCB and the camera are both located inside the housing. The housing has an image capturing window, and a projection of the camera on the image capturing window deviates downward relative to a central point of the image capturing window.

Abstract: The present invention relates to a system (10) for atomizing and ejecting a liquid (L) for a transdermal delivery.

Abstract: A method for determining UV coverage on an irradiation target in real time comprises the steps of irradiating an irradiation target (10) with light including UV light (16) immediately after applying a sunscreen (12); detecting an amount of fluorescent light (20) emitted from the irradiation target in response to the light irradiation and storing the amount of the fluorescent light as reference data; irradiating the irradiation target (10) with the light including UV light (16) after a predetermined passage of time, or after applying a predetermined stress on the sunscreen (12); detecting an amount of fluorescent light (20) emitted from the irradiation target in response to the light irradiation and storing the amount of the fluorescent light as measurement data; and determining UV coverage by dividing the amount of the fluorescent light of the reference data by the amount of the fluorescent light of the measurement data, wherein the irradiation target (10) includes at least one substance emitting fluorescent

Abstract: The present disclosure provides a method of measuring a semiconductor device, including the following operations: obtaining a first image corresponding to a first layer in the semiconductor device; obtaining a second image corresponding to a second layer, below the first layer, in the semiconductor device, wherein the first layer includes at least one first structure and the second layer includes a plurality of second structures that are overlapped by the at least one first structure; generating a third image by combining the first image and the second image; and calculating an offset between the at least one first structure and the plurality of second structures based on the first image and the third image.

Abstract: The present invention discloses a patient interface having an adaptive system, a respiratory mask and a cushion module adapted with the adaptive system. The adaptive system includes a forehead pressure diffusing portion, a cheek buffering portion and a connecting portion. The forehead pressure diffusing portion is disposed in a frame module. The cheek buffering portion is disposed in a cushion module. The connecting portion is positioned between the forehead pressure diffusing portion and the cheek buffering portion. The connecting portion is configured to transmit pressure between the forehead pressure diffusing portion and the cheek buffering portion. Thus, when a user wears a mask or other devices with the adaptive system, a force received by the face of the user could be automatically and appropriately distributed, further improving comfort of the wearer.

Abstract: The present invention provides a method and an apparatus for easily and precisely detecting an effect of sunscreen (12) based on results of clinical examinations even if various cosmetic layers (14) are provided on the skin (10).