Patents by Inventor Kai-Li CHENG

Kai-Li CHENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Gate structure having designed profile
    Patent number: 10529822
    Abstract: Semiconductor structures are provided. The semiconductor structure includes a substrate and a gate structure formed over the substrate. In addition, a sidewall of the gate structure has a top portion having a first inclination, a middle portion having a second inclination, and a bottom portion having a third inclination, and the first inclination, the second inclination, and the third inclination are different from one another.
    Type: Grant
    Filed: July 14, 2017
    Date of Patent: January 7, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kai-Li Cheng, Che-Cheng Chang
  • GATE STRUCTURE HAVING DESIGNED PROFILE
    Publication number: 20170317185
    Abstract: Semiconductor structures are provided. The semiconductor structure includes a substrate and a gate structure formed over the substrate. In addition, a sidewall of the gate structure has a top portion having a first inclination, a middle portion having a second inclination, and a bottom portion having a third inclination, and the first inclination, the second inclination, and the third inclination are different from one another.
    Type: Application
    Filed: July 14, 2017
    Publication date: November 2, 2017
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kai-Li CHENG, Che-Cheng CHANG
  • Gate structure having designed profile and method for forming the same
    Patent number: 9716161
    Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a metal gate structure having curved sidewalls formed over a substrate. The semiconductor structure further includes spacers formed on the curved sidewalls of the metal gate structure. In addition, each curved sidewall of the metal gate structure has a top portion, a middle portion, and a bottom portion, and an angle between the middle portion and the bottom portion of the curved sidewall of the metal gate structure is smaller than 180° C.
    Type: Grant
    Filed: October 1, 2014
    Date of Patent: July 25, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kai-Li Cheng, Che-Cheng Chang
  • GATE STRUCTURE HAVING DESIGNED PROFILE AND METHOD FOR FORMING THE SAME
    Publication number: 20160099337
    Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a metal gate structure having curved sidewalls formed over a substrate. The semiconductor structure further includes spacers formed on the curved sidewalls of the metal gate structure. In addition, each curved sidewall of the metal gate structure has a top portion, a middle portion, and a bottom portion, and an angle between the middle portion and the bottom portion of the curved sidewall of the metal gate structure is smaller than 180° C.
    Type: Application
    Filed: October 1, 2014
    Publication date: April 7, 2016
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kai-Li CHENG, Che-Cheng CHANG