Patents by Inventor Kaili Liu

Kaili Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of purifying and recycling normal-pressure waste hydrogen by full temperature range pressure swing adsorption (FTrPSA) in manufacturing process of semiconductor
    Patent number: 11344840
    Abstract: Through the procedures of pretreatment, temperature swing adsorption (TSA) coarse desorption, pressure swing adsorption (PSA) purification and hydrogen purification, the hydrogenous waste gas from various procedures in the manufacturing process of semiconductor (especially silicon wafer), including the off-gas from chemical vapor deposition (CVD), doping (diffusion and ion implantation), photolithography and cleaning, the combusted and washed discharged gas of the off-gas in other procedures after field treatment and centralized treatment, or the hydrogenous waste gas entering the hydrogen discharge system are purified to meet the standard for the electronic grade hydrogen required for the manufacturing process of semiconductor, the recycling of hydrogen resources is realized, and the yield of hydrogen is greater than or equal to 70-85%.
    Type: Grant
    Filed: May 22, 2019
    Date of Patent: May 31, 2022
    Assignee: SICHUAN TECHAIRS CO., LTD.
    Inventors: Yuming Zhong, Yun Chen, Kaili Liu, Yueming Cai
  • Method of Purifying and Recycling Normal-pressure Waste Hydrogen by Full Temperature Range Pressure Swing Adsorption (FTrPSA) in Manufacturing Process of Semiconductor
    Publication number: 20190275460
    Abstract: Through the procedures of pretreatment, temperature swing adsorption (TSA) coarse desorption, pressure swing adsorption (PSA) purification and hydrogen purification, the hydrogenous waste gas from various procedures in the manufacturing process of semiconductor (especially silicon wafer), including the off-gas from chemical vapor deposition (CVD), doping (diffusion and ion implantation), photolithography and cleaning, the combusted and washed discharged gas of the off-gas in other procedures after field treatment and centralized treatment, or the hydrogenous waste gas entering the hydrogen discharge system are purified to meet the standard for the electronic grade hydrogen required for the manufacturing process of semiconductor, the recycling of hydrogen resources is realized, and the yield of hydrogen is greater than or equal to 70-85%.
    Type: Application
    Filed: May 22, 2019
    Publication date: September 12, 2019
    Inventors: Yuming Zhong, Yun Chen, Kaili Liu, Yueming Cai
  • Method for Gas Separation, Purification and Clarification by FTrPSA
    Publication number: 20180318750
    Abstract: A method for gas separation, purification and clarification by FTrPSA uses the temperature and pressure of different raw gases as well as the differences in adsorption separation coefficients and physicochemical properties among all components in the raw gases at a temperature range of ?80-200° C. and a pressure range of 0.03-4.
    Type: Application
    Filed: February 17, 2017
    Publication date: November 8, 2018
    Inventors: Yuming Zhong, Kaili Liu, Yun Chen, Yueming Cai