Abstract: An unreleased thermopile IR sensor and method of fabrication is provided which includes a new thermally isolating material and an ultra-thin material based sensor which, in combination, provide excellent sensitivity without requiring a released membrane structure. The sensor is fabricated using a wafer transfer technique in which a substrate assembly comprising the substrate and new thermally isolating material is bonded to a carrier substrate assembly comprising a carrier substrate and the ultra-thin material, followed by removal of the carrier substrate. As such, temperature restrictions of the various materials are overcome.

Abstract: An unreleased thermopile IR sensor and method of fabrication is provided which includes a new thermally isolating material and an ultra-thin material based sensor which, in combination, provide excellent sensitivity without requiring a released membrane structure. The sensor is fabricated using a wafer transfer technique in which a substrate assembly comprising the substrate and new thermally isolating material is bonded to a carrier substrate assembly comprising a carrier substrate and the ultra-thin material, followed by removal of the carrier substrate. As such, temperature restrictions of the various materials are overcome.

Abstract: A method for manufacturing a surface machined infrared sensor package is disclosed. A semiconductor wafer is provided having a front side surface and a back side surface. A transistor is defined on the substrate front side. A thin film reflector is implanted in the substrate front side, and a sensor is formed on the semiconductor substrate front side adjacent to the reflector. A thin-film absorber is deposited upon the sensor, wherein the thin-film absorber is substantially parallel to the reflector.