Abstract: A coupled lens structure for a mixed/augmented reality system includes: a lens tube; a first lens with a first aspherical light input surface coupled to a lens-tube light input surface; a second lens with a second spherical light input surface optically coupled to a first spherical light output surface of the first lens; a third lens with a third spherical light input surface optically coupled to a second aspherical light output surface of the second lens; and a fourth lens with a fourth spherical light input surface optically coupled to a third spherical light output surface of the third lens and a fourth spherical light output surface coupled to a lens-tube light output surface. The coupled lens structure has volume of 2.1-3 cc, a lens-tube outer diameter of 12-13.5 mm, and a full angle of view not greater than 30 degrees, featuring an effective reduction in volume and weight.

Abstract: A high electron mobility transistor includes a substrate. A channel layer is disposed on the substrate. An active layer is disposed on the channel layer. The active layer includes a P-type aluminum gallium nitride layer. A P-type gallium nitride gate is disposed on the active layer. A source electrode and a drain electrode are disposed on the active layer.

Abstract: An electronic device is provided that implements thermally conductive plastic supports that may replace the typical use of “feet” used in conventional electronic devices. The thermally conductive supports may extend through the bottom chassis cover (e.g. the “D cover”) of the electronic device, and be mechanically and thermally coupled to a heat pipe that is in turn coupled to a heat source for which thermal regulation is utilized. The thermally conductive plastic supports may provide a heat path from the heat source to the bottom chassis cover and, when the electronic device is disposed on a surface, an additional heat path may be provided from the heat source to this surface.

Abstract: In an embodiment, a device includes: an interposer including: a back-side redistribution structure; an interconnection die over the back-side redistribution structure, the interconnection die including a substrate, a through-substrate via protruding from the substrate, and an isolation layer around the through-substrate via; a first encapsulant around the interconnection die, a surface of the first encapsulant being substantially coplanar with a surface of the isolation layer and a surface of the through-substrate via; and a front-side redistribution structure over the first encapsulant, the front-side redistribution structure including a first conductive via that physically contacts the through-substrate via, the isolation layer separating the first conductive via from the substrate.

Abstract: Provided are a method and an apparatus for lens focusing, a computer device, and a storage medium. The method includes: acquiring a test image obtained by a lens shooting a reference image at a current focusing position, and determining a low-frequency modulation transfer function value of the test image; in response to determining that the low-frequency modulation transfer function value meets a preset value range condition, determining a high-frequency modulation transfer function value of the test image, determining a movement step according to the high-frequency modulation transfer function value, and controlling the lens to move according to the movement step; and using the next focusing position which the lens moves to according to the movement step as a new current focusing position to focus the lens for one time.

Abstract: The present invention relates to a pharmaceutical composition useful for treating a Respiratory Syncytial Virus (RSV) infection, comprising a compound which is or a pharmaceutically acceptable salt thereof, and a second anti-respiratory syncytial virus agent.

Abstract: An apparatus for inspecting a semiconductor substrate includes a rotatable base configured to support a substrate, and a nozzle arm includes a nozzle and a light monitoring device. The light monitoring device includes a laser transmitter and an array of light sensors arranged in the nozzle arm and facing the substrate. The light monitoring device is configured to transmit a laser pulse towards the substrate, wherein the laser pulse impinges on the substrate, receive a reflected laser pulse from the substrate, calculate whether one or more light sensors received the laser pulse, and calculate a distance between the light monitoring device and the substrate using the turnaround time for determining a process quality on the substrate.

Abstract: A power supply includes a conversion circuit, an auxiliary power circuit, and an output control circuit. The conversion circuit converts a DC power into a first output power, and the auxiliary power circuit converts the DC power into a first auxiliary power. The output control circuit is used to selectively connect a first output terminal and a second output terminal so that when the output control circuit disconnects the first output terminal and the second output terminal, the first output power supplies power to a critical load through the first output terminal, and when the output control circuit connects the first output terminal and the second output terminal, the first output power supplies power to the critical load and a non-critical load through the first output terminal and the second output terminal respectively.

Abstract: A semiconductor device includes a substrate, a buffer layer disposed on the substrate, a channel layer disposed on the buffer layer, a barrier layer disposed on the buffer layer, and a passivation layer disposed on the barrier layer. The semiconductor device further includes a device isolation region that extends through the passivation layer, the barrier layer, and at least a portion of the channel layer, and encloses a first device region of the semiconductor device. A damage concentration of the device isolation region varies along a depth direction, and is highest near a junction between the barrier layer and the channel layer.

Abstract: Provided by the present disclosure is a power distribution box having a data interaction function, comprising a moving mechanism, a control mechanism and a data interaction mechanism. The moving mechanism comprises an electric valve and an electric telescopic rod. The control mechanism comprises a main control single-chip microcomputer and a control panel. The data interaction mechanism comprises a power distribution box tester and an output port. The electric valve is electrically connected to the main control single-chip microcomputer and is arranged at the bottom of the power distribution box. The control panel is arranged on a support rod and is electrically connected to the main control single-chip microcomputer. The power distribution box tester is electrically connected to the main control single-chip microcomputer and is arranged in the power distribution box, and the power distribution box tester is used for testing electrical devices of the power distribution box.

Abstract: The present invention discloses a set of novel epigenetic biomarkers for early prediction, treatment response, recurrence and prognosis monitoring of pancreatic cancer. Aberrant methylation of genes can be detected in tumor tissues and plasma samples from pancreatic cancer patients but not in normal healthy individual. The present disclosure also discloses primers and probes used herein.

Abstract: A semiconductor manufacturing system includes: a nozzle including a first channel that allows a fluid to flow through; a light source configured to emit light; and a light sensor configured to receive light, the light source and the light sensor being disposed within the first channel and opposite to each other. The semiconductor manufacturing system is configured to: emit light, by the light source, from within the nozzle toward a surface while the nozzle is dispensing the fluid; receive the light reflected from the surface by the light sensor, the emitted light and the reflected light adapted to be contained within the fluid; and examine a status of the reflected light. The emitted light and the reflected light propagate in a direction parallel to a longitudinal axis of the first channel.

Abstract: A panel transfer device according to one or more embodiment may include a base; an arm rotatably connected to the base, which includes a first detector; an end effector connected to the arm, including: a connector rotatably connected to the arm; a wrist connected to the connector, including a second detector; and a pair of forks connected to the wrist, including sensor. In response to the end effector gripping the panel, the sensor detects displacement of the panel in a first direction, the end effector rotates to a position where the first and second detectors face each other, the first and second detectors communicate to detect displacement of the panel in a second direction, and the panel transfer device calculates a correction amount based on the detected displacement of the panel in the first direction and in the second direction, and places the panel based on the correction amount.

Abstract: This disclosure relates to cathode active materials for use in lithium-ion battery cells.

Abstract: This disclosure relates generally to battery cells, and more particularly, cathode active materials for use in lithium-ion battery cells.

Abstract: A semiconductor structure including a substrate, a first dielectric layer, a first conductive feature, an etch stop layer, a second dielectric layer and a second conductive feature is provided. The first dielectric layer is disposed over the substrate. The first conductive feature is disposed in the first dielectric layer. The etch stop layer is disposed over the first dielectric layer and the first conductive feature, wherein the etch stop layer comprises a metal-containing layer and a silicon-containing layer, the metal-containing layer is located between the first dielectric layer and the silicon-containing layer, the metal-containing layer comprises a nitride-containing region and an oxide-containing region, and the nitride-containing region contacts the first conductive feature. The second dielectric layer is disposed over the etch stop layer. The second conductive feature penetrates the second dielectric layer and electrically connects with the first conductive feature.

Abstract: The present invention provides advantageous high-dose therapeutic compositions and combinations to treat or prevent Dengue virus infections that may be serotype 1, 2, 3 or 4 as well as a process of manufacture.

Abstract: Provided are a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a substrate including a fin portion, first and second doped regions having a first conductive type, first and second contacts, and first and second metal silicide layers. The fin portion protrudes from a surface of the substrate. The first doped region is disposed in the fin portion. The second doped region is disposed in the fin portion and connected to the first doped region. A doping concentration of the second doped region is greater than that of the first doped region. The first contact is disposed on the first doped region. The second contact is disposed on the second doped region. The first metal silicide layer is disposed between the first contact and the first doped region. The second metal silicide layer is disposed between the second contact and the second doped region.

Abstract: Improved inner spacers for semiconductor devices and methods of forming the same are disclosed.

Abstract: A method for fabricating a semiconductor device includes the steps of first providing a substrate having a transistor region and an one time programmable (OTP) capacitor region, forming a first fin-shaped structure on the transistor region and a second fin-shaped structure on the OTP capacitor region, and then performing an oxidation process to form a gate oxide layer on the first fin-shaped structure and the second fin-shaped structure. Preferably, the first fin-shaped structure and the second fin-shaped structure have different shapes under a cross-section perspective.