Patents by Inventor Kai-Lin Mai

Kai-Lin Mai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High-K gate dielectric stack plasma treatment to adjust threshold voltage characteristics
    Patent number: 7303996
    Abstract: A method for treating a gate structure comprising a high-K gate dielectric stack to improve electric performance characteristics including providing a gate dielectric layer stack including a binary oxide over a silicon substrate; forming a polysilicon layer over the gate dielectric layer stack; lithographically patterning and etching to form a gate structure; and, carrying out at least one plasma treatment of the gate structure comprising a plasma source gas selected from the group consisting of H2, N2, O2, and NH3.
    Type: Grant
    Filed: October 1, 2003
    Date of Patent: December 4, 2007
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ming-Fang Wang, Tuo-Hung Hou, Kai-Lin Mai, Liang-Gi Yao, Shih-Chang Chen
  • High-K gate dielectric stack plasma treatment to adjust threshold voltage characteristics
    Publication number: 20050074978
    Abstract: A method for treating a gate structure comprising a high-K gate dielectric stack to improve electric performance characteristics including providing a gate dielectric layer stack including a binary oxide over a silicon substrate; forming a polysilicon layer over the gate dielectric layer stack; lithographically patterning and etching to form a gate structure; and, carrying out at least one plasma treatment of the gate structure comprising a plasma source gas selected from the group consisting of H2, N2, O2, and NH3.
    Type: Application
    Filed: October 1, 2003
    Publication date: April 7, 2005
    Inventors: Ming-Fang Wang, Tuo-Hung Hou, Kai-Lin Mai, Liang-Gi Yao, Shih-Chang Chen