Abstract: A method for manufacturing an indium gallium nitride quantum well is disclosed. The method includes providing a substrate in a process chamber, with the substrate including a gallium nitride layer. Having the process chamber reach a process vacuum. Providing a nitrogen molecular beam in plasma state, an indium molecular beam and an aluminum molecular beam into the process chamber simultaneously, controlling a flow rate ratio of the indium molecular beam to the aluminum molecular beam, and forming an indium aluminum nitride film on the gallium nitride layer, with the flow rate ratio being 0.6, 1.0, 1.29, 1.67 or 3.0. Forming an indium gallium nitride quantum well on the indium aluminum nitride film.

Abstract: A method for forming a semiconductor device is provided. The method includes the following steps: providing a semiconductor substrate; forming a pad layer on the semiconductor substrate; forming a first passivation layer on the pad layer; forming a second passivation layer on the first passivation layer, wherein the second passivation layer comprises polycrystalline silicon; forming an oxide layer on the second passivation layer; forming a nitride layer on the oxide layer; removing a portion of the oxide layer and a portion of the nitride layer to expose a portion of the second passivation layer; removing the portion of the second passivation layer that has been exposed to expose a portion of the first passivation layer; and removing the portion of the first passivation layer that has been exposed to expose a portion of the pad layer.

Abstract: A neural stimulator system which generates stimulation from an implantable stimulator circuit which generates stimulation outputs which mimic biological signals. The user/operator can select stimulation generated from recorded waveforms, or by selecting the characteristics for generating stimulation based on randomized inter-pulse-intervals (IPI). A control unit controls the operation of the implantable stimulator circuit, and receives sets of stimulation parameters based on user input from a user input device executing application specific programming.

Abstract: A transcutaneous electrical stimulation system is provided that can include a number of features. In one implementation, the system can include a plurality of electrodes configured to be in contact with a skin surface of a patient. The system can further include a flexible hub electrically connected to the electrodes and configured to be in contact with the patient. A bend sensor can be disposed in the hub and configured to measure a curvature of the hub. The system can include a signal processing device electrically coupled to the plurality of electrodes and the bend sensor, the signal processing device being configured to change stimulation settings of the plurality of electrodes based on the curvature of the hub. In some implementations, the system can include a multi-channel stimulator. Methods of use are also provided.

Abstract: An integrated circuit die includes a FinFET transistor. The FinFET transistor includes an anti-punch through region below a channel region. Undesirable dopants are removed from the anti-punch through region during formation of the source and drain regions. When source and drain recesses are formed, a layer of dielectric material is deposited in the recesses. An annealing process is then performed. Undesirable dopants diffuse from the anti-punch through region into the layer of dielectric material during the annealing process. The layer of dielectric material is then removed. The source and drain regions are then formed by depositing semiconductor material in the recesses.

Abstract: A disposable implant that may be positioned inside the gastrointestinal (GI) tract through laparotomy or laparoscopic surgery. The implant may be secured in place using a biodegradable glue or biodegradable suture and is naturally expelled from the body with bowel movement after a certain period of time. In one embodiment, GI implant comprises a coil that receives power from, and sends the recorded physiological information to, an external device through wireless inductive coupling.

Abstract: Systems and methods for implementation of a disposable miniaturized implant for treatment of Post-Operative Ileums (POI),a miniaturized implant for treating chronic GI dysmotility (e.g., dysphagia, gastroesophageal reflux disease (GERD), nausea, functional dyspepsia, blockage of transit, and gastroparesis, inflammatory bowel disease) and obesity, by providing electrical stimulation to the part of bowel going through surgery to expedite the healing process while recording the smooth muscle activities simultaneously, or providing stimulation on a treatment location of the GI tract or the branch of the vagus nerve. Systems and methods are also provided for non-invasive, transcutaneous stimulation of anatomy within the abdomen of the patient.

Abstract: An integrated circuit die includes a FinFET transistor. The FinFET transistor includes an anti-punch through region below a channel region. Undesirable dopants are removed from the anti-punch through region during formation of the source and drain regions. When source and drain recesses are formed, a layer of dielectric material is deposited in the recesses. An annealing process is then performed. Undesirable dopants diffuse from the anti-punch through region into the layer of dielectric material during the annealing process. The layer of dielectric material is then removed. The source and drain regions are then formed by depositing semiconductor material in the recesses.

Abstract: An unmanned vehicle, and an unmanned vehicle software and firmware updating system and method, are provided. The method includes the following steps. A geographical location of the unmanned vehicle is obtained. A specific field type corresponding to the geographical location is obtained. A software and a firmware of the unmanned vehicle are determined to be in need of updating. A new program version for updating the software and the firmware of the unmanned vehicle is obtained based on the specific field type. The software and the firmware of the unmanned vehicle are updated according to the new program version.

Abstract: A wireless implant and associated system for motor function recovery after spinal cord injury, and more particularly a multi-channel wireless implant with small package size. The wireless implant can further be used in various medical applications, such as retinal prostheses, gastrointestinal implant, vagus nerve stimulation, and cortical neuromodulation. The system also includes a method and its implementation to acquire the impedance model of the electrode-tissue interface of the implant.

Abstract: A wireless implant and associated system for motor function recovery after spinal cord injury, and more particularly a multi-channel wireless implant with small package size. The wireless implant can further be used in various medical applications, such as retinal prostheses, gastrointestinal implant, vagus nerve stimulation, and cortical neuromodulation. The system also includes a method and its implementation to acquire the impedance model of the electrode-tissue interface of the implant.

Abstract: Systems and methods for implementation of a disposable miniaturized implant for treatment of Post-Operative Ileums (POI),a miniaturized implant for treating chronic GI dysmotility (e.g., dysphagia, gastroesophageal reflux disease (GERD), nausea, functional dyspepsia, blockage of transit, and gastroparesis, inflammatory bowel disease) and obesity, by providing electrical stimulation to the part of bowel going through surgery to expedite the healing process while recording the smooth muscle activities simultaneously, or providing stimulation on a treatment location of the GI tract or the branch of the vagus nerve. Systems and methods are also provided for non-invasive, transcutaneous stimulation of anatomy within the abdomen of the patient.

Abstract: Terminally sterilized demineralized bone material (DBM) and systems and methods for protecting DBM against damage caused by terminal irradiation are described. A method includes providing the DBM, which includes at least a collagen matrix and natural, non-collagenous protein. The DBM is soaked in a mixture of glycerol and a solvent to remove and replace water in the collagen matrix of the DBM. The DBM is dried, after soaking, to form a protected DBM.

Abstract: A wireless implant and associated system for motor function recovery after spinal cord injury, and more particularly a multi-channel wireless implant with small package size. The wireless implant can further be used in various medical applications, such as retinal prostheses, gastrointestinal implant, vagus nerve stimulation, and cortical neuromodulation. The system also includes a method and its implementation to acquire the impedance model of the electrode-tissue interface of the implant.

Abstract: A rectal injection device and a method of operating the same. In one embodiment, the device includes: (1) a body having a handle, (2) a suction system associated with the body, (3) a trigger associated with the handle, (4) a pod coupled to the body via a neck and (5) multiple suction ports associated with the pod, each of the multiple suction ports configured to receive a ligation band thereabout, the suction system configured to provide a suction to the multiple suction ports to draw tissue thereinto, the pod configured to deploy the ligation bands upon activation of the trigger.

Abstract: An integrated circuit die includes a FinFET transistor. The FinFET transistor includes an anti-punch through region below a channel region. Undesirable dopants are removed from the anti-punch through region during formation of the source and drain regions. When source and drain recesses are formed, a layer of dielectric material is deposited in the recesses. An annealing process is then performed. Undesirable dopants diffuse from the anti-punch through region into the layer of dielectric material during the annealing process. The layer of dielectric material is then removed. The source and drain regions are then formed by depositing semiconductor material in the recesses.

Abstract: An ultra-dense electrode-based brain imaging system with high spatial and temporal resolution. A Sparsity and Smoothness enhanced Method Of Optimized electrical TomograpHy (s-SMOOTH) based reconstruction technique to improve the spatial resolution and localization accuracy of reconstructed brain images is described. Also described is a graph Fractional-Order Total Variation (gFOTV) based reconstruction technique to improve the spatial resolution and localization accuracy of reconstructed brain images.

Abstract: A method for forming a semiconductor device is provided. The method includes the following steps: providing a semiconductor substrate; forming a pad layer on the semiconductor substrate; forming a first passivation layer on the pad layer; forming a second passivation layer on the first passivation layer, wherein the second passivation layer comprises polycrystalline silicon; forming an oxide layer on the second passivation layer; forming a nitride layer on the oxide layer; removing a portion of the oxide layer and a portion of the nitride layer to expose a portion of the second passivation layer; removing the portion of the second passivation layer that has been exposed to expose a portion of the first passivation layer; and removing the portion of the first passivation layer that has been exposed to expose a portion of the pad layer.

Abstract: A rectal injection device and a method of operating the same. In one embodiment, the device includes: (1) a body having a handle, (2) a suction system associated with the body, (3) a trigger associated with the handle, (4) a pod coupled to the body via a neck and (5) multiple suction ports associated with the pod, each of the multiple suction ports configured to receive a ligation band thereabout, the suction system configured to provide a suction to the multiple suction ports to draw tissue thereinto, the pod configured to deploy the ligation bands upon activation of the trigger.

Abstract: A method for manufacturing an indium gallium nitride/gallium nitride quantum-well pyramid is provided to improve upon the complexity of the conventional method for manufacturing light-emitting diode die. The method for manufacturing an indium gallium nitride/gallium nitride quantum-well pyramid includes performing a first epitaxial reaction and then a second epitaxial reaction on a substrate under 600-650° C. to form a gallium nitride pyramid, growing an first indium gallium nitride layer on an end face of the gallium nitride pyramid, where the end face is away from the substrate, and growing a first gallium nitride layer on the first indium gallium nitride layer. A flux ratio of nitrogen to gallium of the first epitaxial reaction is 25:1-35:1, and a flux ratio of nitrogen to gallium of the second epitaxial reaction is 130:1-150:1.