Abstract: A circuit board structure includes a carrier, a thin film redistribution layer disposed on the carrier, solder balls electrically connected to the thin film redistribution layer and the carrier, and a surface treatment layer. The thin film redistribution layer includes a plurality of pads, a first dielectric layer, a first metal layer, a second dielectric layer, a second metal layer, and a third dielectric layer. A plurality of first openings of the first dielectric layer expose part of the pads, and a first surface of the first dielectric layer is higher upper surfaces of the pads. The solder balls are disposed in a plurality of third openings of the third dielectric layer and are electrically connected to the second metal layer and the carrier. The surface treatment layer is disposed on the upper surfaces, and a top surface of the surface treatment layer is higher than the first surface.

Abstract: A package structure includes a package substrate, an organic interposer and an electronic unit. The package substrate includes a plurality of first pads. The organic interposer is disposed on the package substrate and includes a plurality of second pads. The second pads are directly connected to the first pads to electrically connected the organic interposer to the package substrate. At least one of each of the first pads and each of the second pads includes a pad portion and a plurality of contact portions connecting the pad portion. A first extension direction of the pad portion is different from a second extension direction of the contact portions. The electronic unit is disposed on the organic interposer, wherein the electronic unit is electrically connected to the package substrate through the organic interposer.

Abstract: An integrated circuit (IC) package structure includes a chip, a redistribution layer (RDL) structure, a molding compound structure and an electromagnetic interference (EMI) shielding structure. The RDL structure is formed on the chip and electrically connected thereto. The molding compound layer is provided on outer surfaces of the chip and the RDL structure. The EMI shielding structure is provided on outer surfaces of the molding compound structure. The molding compound structure layer provided on outer surfaces of the chip and the RDL structure provide protection and reinforcement to multiple faces of the IC package structure; and the EMI shielding structure provided on outer surfaces of the molding compound structure provides EMI protection to multiple faces of the chip and the RDL structure.

Abstract: A light-emitting diode package structure includes a heat dissipation substrate, a redistribution layer, and multiple light-emitting diodes. The heat dissipation substrate includes multiple copper blocks and a heat-conducting material layer. The copper blocks penetrate the heat-conducting material layer. The redistribution layer is disposed on the heat dissipation substrate and electrically connected to the copper blocks. The light-emitting diodes are disposed on the redistribution layer and are electrically connected to the redistribution layer. A side of the light-emitting diodes away from the redistribution layer is not in contact with any component.

Abstract: The invention discloses a glass carrier having a protection structure, comprising a glass body and a protection layer. The glass body has a top surface, a bottom surface, and a lateral surface. The protection layer covers the lateral surface of the glass body. The protection layer is a hard material with a stiffness coefficient higher than a stiffness coefficient of the glass body. The invention further discloses a manufacturing method of a glass carrier having a protection structure, comprising the following steps: covering the protection layer around the lateral surface of the glass body, wherein the protection layer is the hard material with the stiffness coefficient higher than the stiffness coefficient of the glass body.

Abstract: An electronic package module including a circuit substrate, an electronic component disposed on the circuit substrate and a molding compound is provided. The molding compound encapsulates the circuit substrate and the electronic component. The circuit substrate includes a first circuit layer and a first insulation layer covering on the first circuit layer. The first insulation layer has a boundary surface where a second circuit layer is disposed. A second insulation layer covers a part of the second circuit layer while the insulation layer bares a region surrounding the perimeter of the boundary surface. The molding compound directly contacts the region and the second insulation layer.

Abstract: A circuit board structure includes a carrier, a thin film redistribution layer disposed on the carrier, solder balls electrically connected to the thin film redistribution layer and the carrier, and a surface treatment layer. The thin film redistribution layer includes a first dielectric layer, pads, a first metal layer, a second dielectric layer, a second metal layer, and a third dielectric layer. A top surface of the first dielectric layer is higher than an upper surface of each pad. The first metal layer is disposed on a first surface of the first dielectric layer. The second dielectric layer has second openings exposing part of the first metal layer. The second metal layer extends into the second openings and is electrically connected to the first metal layer. The third dielectric layer has third openings exposing part of the second metal layer. The surface treatment layer is disposed on the upper surfaces.

Abstract: A co-packaged structure for optics and electrics includes a substrate, an optical module and an electrical connection layer. The optical module includes a carrier and an optical transceiver unit. The carrier is mounted on the substrate. The optical module is mounted on the carrier. The electrical connection layer is mounted on the substrate, and the carrier is electrically connected with a circuitry on the substrate through the electrical connection layer. A plurality of fiber accommodation through hole are formed on the substrate and correspond to the optical transceiver unit.

Abstract: Disclosed is a package structure including a circuit board, a co-packaged optics (CPO) substrate, an application specific integrated circuit (ASIC) assembly, a glass interposer, an electronic integrated circuit (EIC) assembly, a photonic integrated circuit (PIC) assembly, and an optical fiber assembly. The CPO substrate is configured on the circuit board, and the ASIC assembly is configured on the CPO substrate. The glass interposer is configured on the CPO substrate and includes an upper surface, a lower surface, a cavity, and at least one through glass via (TGV). The EIC assembly is configured on the upper surface of the glass interposer and electrically connected to the glass interposer. The PIC assembly is configured in the cavity of the glass interposer and electrically connected to the glass interposer. The optical fiber assembly is configured on the lower surface of the glass interposer and optically connected to the PIC assembly.

Abstract: The invention provides a circuit board structure and a manufacturing method thereof. The circuit board structure includes a line portion, a first insulating layer, and a conductive terminal. The first insulating layer is disposed on the line portion. The conductive terminal is disposed on the first insulating layer and embedded in the first insulating layer to be electrically connected with the line portion. The conductive terminal includes a first portion, a second portion, and a third portion. The first portion protrudes from a surface of the first insulating layer. The second portion is embedded in the first insulating layer and connected to the first portion. The third portion is disposed between the line portion and the second portion. A width of the second portion is greater than a width of the third portion.

Abstract: A circuit board structure includes a carrier, a thin film redistribution layer disposed on the carrier, solder balls electrically connected to the thin film redistribution layer and the carrier, and a surface treatment layer. The thin film redistribution layer includes a first dielectric layer, pads, a first metal layer, a second dielectric layer, a second metal layer, and a third dielectric layer. A top surface of the first dielectric layer is higher than an upper surface of each pad. The first metal layer is disposed on a first surface of the first dielectric layer. The second dielectric layer has second openings exposing part of the first metal layer. The second metal layer extends into the second openings and is electrically connected to the first metal layer. The third dielectric layer has third openings exposing part of the second metal layer. The surface treatment layer is disposed on the upper surfaces.

Abstract: A circuit board structure includes a carrier, a thin film redistribution layer disposed on the carrier, solder balls electrically connected to the thin film redistribution layer and the carrier, and a surface treatment layer. The thin film redistribution layer includes a plurality of pads, a first dielectric layer, a first metal layer, a second dielectric layer, a second metal layer, and a third dielectric layer. A plurality of first openings of the first dielectric layer expose part of the pads, and a first surface of the first dielectric layer is higher upper surfaces of the pads. The solder balls are disposed in a plurality of third openings of the third dielectric layer and are electrically connected to the second metal layer and the carrier. The surface treatment layer is disposed on the upper surfaces, and a top surface of the surface treatment layer is higher than the first surface.

Abstract: A circuit board structure includes a carrier, a thin film redistribution layer disposed on the carrier, solder balls electrically connected to the thin film redistribution layer and the carrier, and a surface treatment layer. The thin film redistribution layer includes a plurality of pads, a first dielectric layer, a first metal layer, a second dielectric layer, a second metal layer, and a third dielectric layer. A plurality of first openings of the first dielectric layer expose part of the pads, and a first surface of the first dielectric layer is higher upper surfaces of the pads. The solder balls are disposed in a plurality of third openings of the third dielectric layer and are electrically connected to the second metal layer and the carrier. The surface treatment layer is disposed on the upper surfaces, and a top surface of the surface treatment layer is higher than the first surface.

Abstract: A circuit board structure includes a carrier, a thin film redistribution layer disposed on the carrier, solder balls electrically connected to the thin film redistribution layer and the carrier, and a surface treatment layer. The thin film redistribution layer includes a first dielectric layer, pads, a first metal layer, a second dielectric layer, a second metal layer, and a third dielectric layer. A top surface of the first dielectric layer is higher than an upper surface of each pad. The first metal layer is disposed on a first surface of the first dielectric layer. The second dielectric layer has second openings exposing part of the first metal layer. The second metal layer extends into the second openings and is electrically connected to the first metal layer. The third dielectric layer has third openings exposing part of the second metal layer. The surface treatment layer is disposed on the upper surfaces.

Abstract: A circuit board structure includes a circuit substrate having opposing first and second sides, a redistribution structure disposed at the first side, and a dielectric structure disposed at the second side. The circuit substrate includes a first circuit layer disposed at the first side and a second circuit layer disposed at the second side. The redistribution structure is electrically coupled to the circuit substrate and includes a first leveling dielectric layer covering the first circuit layer, a first thin-film dielectric layer disposed on the first leveling dielectric layer and having a material different from the first leveling dielectric layer, and a first redistributive layer disposed on the first thin-film dielectric layer and penetrating through the first thin-film dielectric layer and the first leveling dielectric layer to be in contact with the first circuit layer. The dielectric structure includes a second leveling dielectric layer disposed below the second circuit layer.

Abstract: A method of manufacturing package structures includes providing a carrier including a supporting layer, a metal layer, and a release layer between the supporting layer and the metal layer at first. Afterwards, a composite layer of a non-conductor inorganic material and an organic material is disposed on the metal layer. Then, a chip embedded substrate is bonded on the composite layer. Afterwards, an insulating protective layer having openings is formed on the circuit layer structure and exposes parts of the circuit layer structure in the openings. Afterwards, the supporting layer and the release layer are removed to form two package substrates. Then, each of the package substrates is cut.

Abstract: An integrated circuit (IC) package structure includes a chip, a redistribution layer (RDL) structure, a molding compound structure and an electromagnetic interference (EMI) shielding structure. The RDL structure is formed on the chip and electrically connected thereto. The molding compound layer is provided on outer surfaces of the chip and the RDL structure. The EMI shielding structure is provided on outer surfaces of the molding compound structure. The molding compound structure layer provided on outer surfaces of the chip and the RDL structure provide protection and reinforcement to multiple faces of the IC package structure; and the EMI shielding structure provided on outer surfaces of the molding compound structure provides EMI protection to multiple faces of the chip and the RDL structure.

Abstract: An integrated circuit (IC) package structure includes a chip, a redistribution layer (RDL) structure, a molding compound structure and an electromagnetic interference (EMI) shielding structure. The RDL structure is formed on the chip and electrically connected thereto. The molding compound layer is provided on outer surfaces of the chip and the RDL structure. The EMI shielding structure is provided on outer surfaces of the molding compound structure. The molding compound structure layer provided on outer surfaces of the chip and the RDL structure provide protection and reinforcement to multiple faces of the IC package structure; and the EMI shielding structure provided on outer surfaces of the molding compound structure provides EMI protection to multiple faces of the chip and the RDL structure. The IC package structure has upgraded structural strength, reliability and stability in use. A method of manufacturing the above IC package structure is also introduced.

Abstract: The present invention provides an etching device which comprises an oxygen supplier, so that the etching device of the present invention can etch copper gently by means of the dissolved oxygen in the etching solution to accurately control the etching degree so as to fulfill the stricter requirements of microcircuit manufacturing. The present invention further provides an etching method. Finally, the etching waste solution of the present invention can be recycled to further ameliorate the environmental pollution and reduce the production cost, so the present invention is widely applicable in integrated circuit packaging.

Abstract: A chip packaging structure includes a chip, a redistribution layer, a solder ball, an encapsulant, and a stress buffer layer. The chip has an active surface and a back surface opposite to each other, and a peripheral surface connected to the active surface and the back surface. The redistribution layer is disposed on the active surface of the chip. The solder ball is disposed on the redistribution layer, and the chip is electrically connected to the solder ball through the redistribution layer. The encapsulant encapsulates the active surface and the back surface of the chip, the redistribution layer, and part of the solder ball. The stress buffer layer at least covers the peripheral surface of the chip. An outer surface of the stress buffer layer is aligned with a side surface of the encapsulant.