Abstract: Methods for forming boron nitride layer on a surface of a substrate by a plasma enhanced atomic layer deposition (PEALD) process are provided. The methods comprise the steps of providing a substrate withing a reaction chamber; and executing at least one deposition cycle. The deposition cycle comprises providing a boron precursor into the reaction chamber, the boron precursor comprising boron halide; and providing a reactive species generated from a plasma produced from a reactant gas into the reaction chamber.

Abstract: Methods of forming and using a structure that includes a metal hardmask layer are disclosed. The metal hardmask can include desired properties, such as relatively high tensile strength, even after subsequent etch steps. Exemplary methods include using a cyclical deposition process to deposit the metal hardmask layer. The metal hardmask layer can include, for example, one or more of a metal nitride, a metal carbide, and a metal carbonitride.

Abstract: Methods of forming a silicon oxycarbide layer on a surface of a substrate are disclosed. Exemplary methods include providing an oxygen-free reactant to a reaction chamber and performing one or more deposition cycles, wherein each deposition cycle includes providing a silicon precursor to the reaction chamber for a silicon precursor pulse period and providing pulsed plasma power for a plasma power period to form the silicon oxycarbide layer.

Abstract: Methods of forming a silicon oxycarbide layer on a surface of a substrate are disclosed. Exemplary methods include providing an oxygen-free reactant to a reaction chamber and performing one or more deposition cycles, wherein each deposition cycle includes providing a silicon precursor to the reaction chamber for a silicon precursor pulse period and providing pulsed plasma power for a plasma power period to form the silicon oxycarbide layer.

Abstract: Methods of forming a silicon oxycarbide layer on a surface of a substrate are disclosed. Exemplary methods include providing an oxygen-free reactant to a reaction chamber and performing one or more deposition cycles, wherein each deposition cycle includes providing a silicon precursor to the reaction chamber for a silicon precursor pulse period and providing plasma power for a plasma power period to form the silicon oxycarbide layer. Exemplary silicon precursors comprise a molecule comprising silicon, oxygen, carbon, and optionally nitrogen. The silicon precursor can further include one or more of (i) one or two silicon-oxygen bonds, (ii) one or two silicon-carbon bonds, or (iii) one carbon-carbon double bond.

Abstract: Methods of forming a silicon oxycarbide layer on a surface of a substrate are disclosed. Exemplary methods include providing an oxygen-free reactant to a reaction chamber and performing one or more deposition cycles, wherein each deposition cycle includes providing a silicon precursor to the reaction chamber for a silicon precursor pulse period and providing pulsed plasma power for a plasma power period to form the silicon oxycarbide layer.