Abstract: The present disclosure provides a method for manufacturing a fuse component having a three-dimensional (3D) structure. The method includes providing an active region, forming a first recess region and a second recess region in the active region, disposing a fuse dielectric material in the first recess region and the second recess region, and filling the first recess region and the second recess region with a gate metal material.

Abstract: A fuse component, a semiconductor device, and a method of manufacturing a fuse component are provided. The fuse component includes an active region having a surface, a fuse dielectric layer extending from the surface of the active region into the active region, and a gate metal layer surrounded by the fuse dielectric layer.

Abstract: A fuse component and a semiconductor device and a semiconductor device having the fuse component are provided. The fuse component includes an active region having a surface, a first fuse dielectric layer extending from the surface of the active region into the active region, a first gate metal layer surrounded by the first fuse dielectric layer, a second fuse dielectric layer extending from the surface of the active region into the active region, and a second gate metal layer surrounded by the second fuse dielectric layer. The first gate metal layer is electrically connected with the second gate metal layer.

Abstract: The present disclosure provides a method for manufacturing a fuse component having a three-dimensional (3D) structure. The method includes providing an active region, forming a first recess region and a second recess region in the active region, disposing a fuse dielectric material in the first recess region and the second recess region, and filling the first recess region and the second recess region with a gate metal material.

Abstract: A fuse component, a semiconductor device, and a method of manufacturing a fuse component are provided. The fuse component includes an active region having a surface, a fuse dielectric layer extending from the surface of the active region into the active region, and a gate metal layer surrounded by the fuse dielectric layer.

Abstract: A semiconductor device with a fuse component is provided. The semiconductor device includes a substrate having an active region; a fuse dielectric layer disposed in the active region; and a gate metal layer disposed in the active region and surrounded by the fuse dielectric layer. The he gate metal layer is configured to receive a voltage to change a resistivity between the gate metal layer and the active region.

Abstract: An integrated circuit device is disclosed. The integrated circuit device includes a capacitor array, a decoder circuit, and an integrated circuit. The capacitor array includes a plurality of capacitor units. The decoder circuit is coupled to the capacitor array. The integrated circuit is coupled to the decoder circuit. The decoder circuit is configured to conduct part of the plurality of capacitor units, and to un-conduct part of the plurality of capacitor units, so as to adjust a capacitance value coupled to the integrated circuit.