Abstract: When run on high pixel density monitors, software applications, which are written to be legible at all resolutions benefit greatly from the high pixel density. Other applications, especially those containing resources whose dimensions and placement are described in terms of numbers of pixels (e.g., a bitmap, text), may have reduced legibility. A method is described which facilitates legibility of both classes of software applications when run on high pixel density monitors.

Abstract: The present invention discloses a thin film transistor and a process for forming thereof by a high anisotropy etching process. A thin film transistor according to the present invention comprises a transistor element including a gate electrode, a gate insulating layer, a semiconductor layer, and source and drain electrodes; a passivation layer being deposited on the layers and having first openings for contact holes; and an interlayer insulator extending along with the passivation layer and having second openings for the contact holes, the first openings and the second openings being aligned each other over the substrate, wherein an electrical conductive layer is deposited on an inner wall of the contact hole and the inner wall is formed by the first and second openings tapered smoothly and continuously through an anisotropic etching process.

Abstract: A pixel cell has a thin film transistor structure formed on a substrate. A signal conductor is patterned on the thin film transistor structure, and a first patterned layer of a transparent conductive material covers the signal conductor. The first patterned layer provides a pattern employed in etching a channel region of the thin film transistor structure. A dielectric layer is formed over the pixel cell and includes a via hole down to the first patterned layer of the transparent conductive material. A second layer of transparent conductive material extends through the via hole to contact the first patterned layer wherein the second layer is self-aligned to the transistor structure.

Abstract: The present invention discloses a thin film transistor and a process for forming thereof by a high anisotropy etching process. A thin film transistor according to the present invention comprises a transistor element including a gate electrode, a gate insulating layer, a semiconductor layer, and source and drain electrodes; a passivation layer being deposited on the layers and having first openings for contact holes; and an interlayer insulator extending along with the passivation layer and having second openings for the contact holes, the first openings and the second openings being aligned each other over the substrate, wherein an electrical conductive layer is deposited on an inner wall of the contact hole and the inner wall is formed by the first and second openings tapered smoothly and continuously through an anisotropic etching process.

Abstract: The present invention discloses a thin film transistor and a process for forming thereof by a high anisotropy etching process. A thin film transistor according to the present invention comprises a transistor element including a gate electrode, a gate insulating layer, a semiconductor layer, and source and drain electrodes; a passivation layer being deposited on the layers and having first openings for contact holes; and an interlayer insulator extending along with the passivation layer and having second openings for the contact holes, the first openings and the second openings being aligned each other over the substrate, wherein an electrical conductive layer is deposited on an inner wall of the contact hole and the inner wall is formed by the first and second openings tapered smoothly and continuously through an anisotropic etching process.

Abstract: A pixel cell has a thin film transistor structure formed on a substrate. A signal conductor is patterned on the thin film transistor structure, and a first patterned layer of a transparent conductive material covers the signal conductor. The first patterned layer provides a pattern employed in etching a channel region of the thin film transistor structure. A dielectric layer is formed over the pixel cell and includes a via hole down to the first patterned layer of the transparent conductive material. A second layer of transparent conductive material extends through the via hole to contact the first patterned layer wherein the second layer is self-aligned to the transistor structure.

Abstract: A display device comprises a gate metal and a data metal formed in an array region and in a periphery region outside of the array region of the display device. A planarizing layer is formed over the array region and the periphery region. Vias are patterned into the planarizing layer in the array region and the periphery region to expose portions of at least one of the gate metal and the data metal. A transparent conductor is deposited in the array region and the periphery region. A metal layer is locally deposited over the transparent conductor in selected areas of the periphery region. The metal layer and the transparent conductor are patterned to form an additional wiring level and/or to form connections between the gate metal and the data metal in the periphery region and to form transparent pixel electrodes in the array region.

Abstract: A pixel cell has a thin film transistor structure formed on a substrate. A signal conductor is patterned on the thin film transistor structure, and a first patterned layer of a transparent conductive material covers the signal conductor. The first patterned layer provides a pattern employed in etching a channel region of the thin film transistor structure. A dielectric layer is formed over the pixel cell and includes a via hole down to the first patterned layer of the transparent conductive material. A second layer of transparent conductive material extends through the via hole to contact the first patterned layer wherein the second layer is self-aligned to the transistor structure.

Abstract: The present invention discloses a thin film transistor and a process for forming thereof by a high anisotropy etching process. A thin film transistor according to the present invention comprises a transistor element including a gate electrode, a gate insulating layer, a semiconductor layer, and source and drain electrodes; a passivation layer being deposited on the layers and having first openings for contact holes; and an interlayer insulator extending along with the passivation layer and having second openings for the contact holes, the first openings and the second openings being aligned each other over the substrate, wherein an electrical conductive layer is deposited on an inner wall of the contact hole and the inner wall is formed by the first and second openings tapered smoothly and continuously through an anisotropic etching process.

Abstract: A display device and method for fabrication are disclosed. A gate metal and a data metal are formed in an array region and in a periphery region outside of the array region of the display device. A planarizing layer is formed over the array region and the periphery region, and vias are patterned into the planarizing layer in the array region and the periphery region to expose portions of at least one of the gate metal and the data metal. A transparent conductor is deposited in the array region and the periphery region. A metal layer is locally deposited over the transparent conductor in selected areas of the periphery region. Then, using a same lithographic pattern, the metal layer and the transparent conductor are patterned to form an additional wiring level and/or to form connections between the gate metal and the data metal in the periphery region and to form transparent pixel electrodes in the array region.

Abstract: An active matrix display in accordance with the present invention includes a plurality of pixels arranged in an array. At least two transistors are included for coupling to each pixel, and the transistors are positioned within the array for switching the pixels on and off according to data and gate signals. A plurality of control lines are coupled to the transistors of each pixel such that the control lines provide multiplexing for at least one of data signal multiplexing and gate signal multiplexing.

Abstract: A method for opening resist in raised areas of a semiconductor device, in accordance with the present invention, includes forming a conductive layer over a channel insulator layer to form a raised portion which includes a height above a substantially planar surrounding area. The channel insulator layer is aligned to a gate electrode. A photoresist layer is formed over the raised portion and the surrounding area and the photoresist is patterned by employing a gray scale light mask to reduce exposure light on the photoresist on the conductive layer over the raised portion such that after developing the photoresist, the photoresist is removed over a top surface of the raised portion but remains in the surrounding area. The conductive layer is etched in accordance with the photoresist to form source and drain electrodes which are self aligned to the channel insulator layer.

Abstract: An active matrix display in accordance with the present invention includes a plurality of pixels arranged in an array. At least two transistors associated with each pixel are included. The transistors are serially connected to each other and disposed within the array for switching the pixels on and off according to data and gate signals. A data line is coupled to a first end of the serially connected transistors for each pixel. A second end of the serially connected transistors is coupled to a storage device. The serially connected transistors provide multiplexing capability for at least one of data signal multiplexing and gate signal multiplexing.

Abstract: A method for opening resist in raised areas of a semiconductor device. In one aspect, a conductive layer is formed over a channel insulator layer to form a raised portion including a height above a substantially planar surrounding area, the channel insulator layer being aligned to a gate electrode. A photoresist layer is formed over the raised portion and the surrounding area, and patterned by employing a gray scale light mask to reduce exposure light on the photoresist over the raised portion. Then, the photoresist is etched to thin it such that a gap is formed in the photoresist down to the conductive layer over the raised portion, but the photoresist remains everywhere else, and the conductive layer is etched in accordance with the photoresist to form source and drain electrodes which are self aligned to the channel insulator layer.

Abstract: A pixel cell has a thin film transistor structure formed on a substrate. A signal conductor is patterned on the thin film transistor structure, and a first patterned layer of a transparent conductive material covers the signal conductor. The first patterned layer provides a pattern employed in etching a channel region of the thin film transistor structure. A dielectric layer is formed over the pixel cell and includes a via hole down to the first patterned layer of the transparent conductive material. A second layer of transparent conductive material extends through the via hole to contact the first patterned layer wherein the second layer is self-aligned to the transistor structure.

Abstract: In accordance with the present invention, a passive liquid crystal display cell includes a first substrate having a light absorbent material patterned thereon. A first conductive material is formed in a position relative to the light absorbent material for forming one of a data line and a gate line. The position may be over the light absorbent material or below the light absorbent material (and may include transparent layers in between). A second conductive material is spaced apart from the first conductive material by a gap. The gap includes liquid crystal, and the second conductive material forms the other of the data line and the gate line. A pretilt control structure is formed adjacent to the liquid crystal. The gate line and the data line provide an electric field therebetween wherein the pretilt control structure provides pretilt for the liquid crystal to provide a wide viewing angle.

Abstract: An active matrix display in accordance with the present invention includes a plurality of pixels arranged in an array. At least two transistors associated with each pixel are included. The transistors are serially connected to each other and disposed within the array for switching the pixels on and off according to data and gate signals. A data line is coupled to a first end of the serially connected transistors for each pixel. A second end of the serially connected transistors is coupled to a storage device. The serially connected transistors provide multiplexing capability for at least one of data signal multiplexing and gate signal multiplexing.

Abstract: A driving method for multiplexing pixels in active matrix displays in accordance with the present invention includes the steps of providing a plurality of pixels arranged in an array, wherein each pixel includes at least two transistors associated therewith, the transistors disposed in the array of pixels and each pixel including a plurality of control lines for controlling the transistors for turning each pixel on and off and sequencing waveforms on the control lines to provide multiplexing at the pixels in the array. A circuit for addressing pixels in a pixel array in accordance with the present invention includes at least two transistors associated with each pixel, the transistors disposed in the array of pixels. A plurality of control lines associated with each pixel for controlling the transistors of each pixel. At least one gate driver sequences waveforms on the control lines to provide multiplexing at the pixels in the array.

Abstract: In accordance with the present invention, a liquid crystal display cell includes a first substrate having a light absorbent material patterned thereon. The light absorbent material includes a portion disposed within a pixel area. A conductive layer is formed on the light absorbent material for forming a first transparent electrode. A second electrode is spaced apart from the first electrode by a gap. The gap includes liquid crystal. A ridge or a trench is formed in the pixel area and projects into the liquid crystal. The ridge or trench is self-aligned to the portions of the light absorbent material in the pixel area. The first electrode and the second electrode provide an electric field therebetween wherein the ridge or trench provides pretilt control for the liquid crystal to provide an improved wide viewing angle and the portions of the light absorbent material absorb light leaked from the ridge. Other embodiments for active and passive displays are included as well as a method for employing the invention.