Abstract: A catalytic seeding control method is disclosed. A catalytic metal film is deposited on a substrate with a nonwettable inclined surface. The catalytic metal film is then melted to form metal droplets. The metal droplets roll along the nonwettable inclined surface and aggregate to form a singular catalytic seed on the bottom of the nonwettable inclined surface. Then, the location of the singular catalytic seed is precisely controlled. Also, the size of the catalytic seed is controlled by adjusting the size of the inclined surface and the thickness of the catalytic metal layer to grow a one-dimensional structure with specific localization and single well-aligned manipulated size. The structure is utilized for the integrated microelectronic device fabrication.