Abstract: The present disclosure is related to a system. The system may include a gantry, a detector assembly including a plurality of detector modules arranged on the gantry, and/or a cooling assembly configured to cool the detector assemble. Each of the plurality of detector modules may include a crystal array configured to detect radiation rays, and a shielding component configured to shield the crystal array from an electromagnetic interference. The cooling assembly may include a plurality of cooling components. Each of the plurality of cooling components may be embedded in a corresponding detector module of the plurality of detector modules.

Abstract: The present disclosure provides a multi-carrier time-division multiplexing (MC-TDMA) modulation and demodulation method and system. Before multi-carrier modulation is performed on an input symbol, an interleaving allocation and an FFT may be performed, a time domain symbol may be transformed into a frequency domain symbol signal to perform a MDFT treatment. A sending end may adopt an analyzing filter bank structure, and pre-filtering and an IFFT may be performed on a signal successively. A pre-filter may be positioned between an NM point FFT and an M point IFFT, a PAPR value of the system may be reduced using the symmetry of a coefficient of a filter, and a frequency domain symbol signal may be allocated to different sub-bands for multi-carrier modulation.

Abstract: The present disclosure is related to a system. The system may include a gantry, a detector assembly including a plurality of detector modules arranged on the gantry, and/or a cooling assembly configured to cool the detector assemble. Each of the plurality of detector modules may include a crystal array configured to detect radiation rays, and a shielding component configured to shield the crystal array from an electromagnetic interference. The cooling assembly may include a plurality of cooling components. Each of the plurality of cooling components may be embedded in a corresponding detector module of the plurality of detector modules.

Abstract: An image rendering method and apparatus relate to the field of communications technologies and include a moving direction of a head of a user wearing a virtual reality (VR) device being detected, at least two rendering areas in a display interface being determined based on the moving direction, and then images displayed in different rendering areas being rendered using different rendering intensity coefficients, where a rendering intensity coefficient of a rendering area to which the moving direction points is greater than a rendering intensity coefficient of a rendering area to which an opposite direction of the moving direction points.

Abstract: The present disclosure provides a multi-carrier time-division multiplexing (MC-TDMA) modulation and demodulation method and system. Before multi-carrier modulation is performed on an input symbol, an interleaving allocation and an FFT may be performed, a time domain symbol may be transformed into a frequency domain symbol signal to perform a MDFT treatment. A sending end may adopt an analyzing filter bank structure, and pre-filtering and an IFFT may be performed on a signal successively. A pre-filter may be positioned between an NM point FFT and an M point IFFT, a PAPR value of the system may be reduced using the symmetry of a coefficient of a filter, and a frequency domain symbol signal may be allocated to different sub-bands for multi-carrier modulation.

Abstract: The present disclosure provides a multi-carrier time-division multiplexing (MC-TDMA) modulation and demodulation method and system. Before multi-carrier modulation is performed on an input symbol, an interleaving allocation and an FFT may be performed, a time domain symbol may be transformed into a frequency domain symbol signal to perform a MDFT treatment. A sending end may adopt an analyzing filter bank structure, and pre-filtering and an IFFT may be performed on a signal successively. A pre-filter may be positioned between an NM point FFT and an M point IFFT, a PAPR value of the system may be reduced using the symmetry of a coefficient of a filter, and a frequency domain symbol signal may be allocated to different sub-bands for multi-carrier modulation.

Abstract: The present disclosure provides a multi-carrier time-division multiplexing (MC-TDMA) modulation and demodulation method and system. Before multi-carrier modulation is performed on an input symbol, an interleaving allocation and an FFT may be performed, a time domain symbol may be transformed into a frequency domain symbol signal to perform a MDFT treatment. A sending end may adopt an analyzing filter bank structure, and pre-filtering and an IFFT may be performed on a signal successively. A pre-filter may be positioned between an NM point FFT and an M point IFFT, a PAPR value of the system may be reduced using the symmetry of a coefficient of a filter, and a frequency domain symbol signal may be allocated to different sub-bands for multi-carrier modulation.

Abstract: The present disclosure provides a multi-carrier time-division multiplexing (MC-TDMA) modulation and demodulation method and system. Before multi-carrier modulation is performed on an input symbol, an interleaving allocation and an FFT may be performed, a time domain symbol may be transformed into a frequency domain symbol signal to perform a MDFT treatment. A sending end may adopt an analyzing filter bank structure, and pre-filtering and an IFFT may be performed on a signal successively. A pre-filter may be positioned between an NM point FFT and an M point IFFT, a PAPR value of the system may be reduced using the symmetry of a coefficient of a filter, and a frequency domain symbol signal may be allocated to different sub-bands for multi-carrier modulation.

Abstract: An image rendering method and apparatus relate to the field of communications technologies and include a moving direction of a head of a user wearing a virtual reality (VR) device being detected, at least two rendering areas in a display interface being determined based on the moving direction, and then images displayed in different rendering areas being rendered using different rendering intensity coefficients, where a rendering intensity coefficient of a rendering area to which the moving direction points is greater than a rendering intensity coefficient of a rendering area to which an opposite direction of the moving direction points.

Abstract: The present disclosure provides a multi-carrier time-division multiplexing (MC-TDMA) modulation and demodulation method and system. Before multi-carrier modulation is performed on an input symbol, an interleaving allocation and an FFT may be performed, a time domain symbol may be transformed into a frequency domain symbol signal to perform a MDFT treatment. A sending end may adopt an analyzing filter bank structure, and pre-filtering and an IFFT may be performed on a signal successively. A pre-filter may be positioned between an NM point FFT and an M point IFFT, a PAPR value of the system may be reduced using the symmetry of a coefficient of a filter, and a frequency domain symbol signal may be allocated to different sub-bands for multi-carrier modulation.

Abstract: A digital transaction method is applied in a user device. The user device instructs a digital transaction management server system to bind a device identification code of the user device and an order after the user device purchases with the digital transaction management server system and accordingly obtains the order. The user device generates a digital certification and a safety code, wherein the safety code varies according to a predetermined varying sequence during a predetermined time interval. After the safety code passes through an electronic verification of a service provider, the user device requests the service provider to settle an electronic transaction.

Abstract: A light-emitting diode (LED) package structure includes a lead frame, a LED chip, a package body, N opaque spacer and N+1 encapsulating glues. The LED chip is disposed on the lead frame; the package body covers the lead frame and exposes the LED chip. The package body has an accommodation space, divided by the N opaque spacers disposed on the LED chip into N+1 chambers. The N+1 encapsulating glues are filled into the N+1 chambers, where N is a natural number.

Abstract: A light-emitting diode (LED) package structure includes a lead frame, a LED chip, a package body, N opaque spacer and N+1 encapsulating glues. The LED chip is disposed on the lead frame; the package body covers the lead frame and exposes the LED chip. The package body has an accommodation space, divided by the N opaque spacers disposed on the LED chip into N+1 chambers. The N+1 encapsulating glues are filled into the N+1 chambers, where N is a natural number.

Abstract: The disclosure provides a light-emitting diode (LED) package structure, including: a lead frame; at least two light-emitting diode chips having different light-emitting wavelengths disposed on the lead frame; an encapsulant disposed over the lead frame and covering the light-emitting diode chips, wherein the encapsulant has a first concave portion; and an optical glue disposed in the first concave portion, wherein the optical glue has a plurality of scattering particles to uniformly mix the lights of different wavelengths emitted by the light-emitting diode chips.

Abstract: The present invention provides a tag ablation mechanism and a tag-and-tape combination apparatus using the same, wherein a driving gear is actuated to rotate by a rotating device by way of a lever to drive a driven gear to rotate so as to ablate a tag from a bottom paper extended from a tag roll on the driven gear. In the present invention, an ablated tag is capable of being combined with a tape so that the tag attached to the tape can be adhered to a packaged object. The mechanism and apparatus of the present invention are capable of adjusting a rotating arc length so as to handle various tags with different sizes and lengths and to complete tag ablation and tag-and-tape combination in each driving operation.

Abstract: The present invention provides a tag ablation mechanism and a tag-and-tape combination apparatus using the same, wherein a driving gear is actuated to rotate by a rotating device by way of a lever to drive a driven gear to rotate so as to ablate a tag from a bottom paper extended from a tag roll on the driven gear. In the present invention, an ablated tag is capable of being combined with a tape so that the tag attached to the tape can be adhered to a packaged object. The mechanism and apparatus of the present invention are capable of adjusting a rotating arc length so as to handle various tags with different sizes and lengths and to complete tag ablation and tag-and-tape combination in each driving operation.

Abstract: A CMOS RF device and a method to fabricate said device with low gate contact resistance are described. Conventional MOS transistor is first formed with isolation regions, poly-silicon gate structure, sidewall spacers around poly gate, and implanted source/drain with lightly and heavily doped regions. A silicon dioxide layer such as TEOS is deposited, planarized with chemical mechanical polishing (CMP) to expose the gate and treated with dilute HF etchant to recess the silicon dioxide layer below the surface of the gate. Silicon nitride is then deposited and planarized with CMP and then etched except around the gates, using a oversize poly-silicon gate mask. Inter-level dielectric mask is then deposited, contact holes etched, and contact metal is deposited to form the transistor. During contact hole etch over poly-silicon gate, silicon nitride around the poly gate acts as an etch stop.

Abstract: A CMOS RF device and a method to fabricate said device with low gate contact resistance are described. Conventional MOS transistor is first formed with isolation regions, poly-silicon gate structure, sidewall spacers around poly gate, and implanted source/drain with lightly and heavily doped regions. A silicon dioxide layer such as TEOS is deposited, planarized with chemical mechanical polishing (CMP) to expose the gate and treated with dilute HF etchant to recess the silicon dioxide layer below the surface of the gate. Silicon nitride is then deposited and planarized with CMP and then etched except around the gates, using a oversize poly-silicon gate mask. Inter-level dielectric mask is then deposited, contact holes etched, and contact metal is deposited to form the transistor. During contact hole etch over poly-silicon gate, silicon nitride around the poly gate acts as an etch stop.

Abstract: A method of forming a capacitor comprising the following steps. A substrate having a lower low-k dielectric layer formed thereover is provided with the lower low-k dielectric layer having a dielectric constant of less than about 3.0. Metal vertical electrode plates are formed within the lower low-k dielectric layer so that the adjacent metal vertical electrode plates have lower low-k dielectric layer portions therebetween. The lower low-k dielectric layer portions between the adjacent metal vertical electrode plates are replaced with high-k dielectric material trench portions having a dielectric constant of greater than about 3.0.

Abstract: A CMOS RF device and a method to fabricate said device with low gate contact resistance are described. Conventional MOS transistor is first formed with isolation regions, poly-silicon gate structure, sidewall spacers around poly gate, and implanted source/drain with lightly and heavily doped regions. A silicon dioxide layer such as TEOS is deposited, planarized with chemical mechanical polishing (CMP) to expose the gate and treated with dilute HF etchant to recess the silicon dioxide layer below the surface of the gate. Silicon nitride is then deposited and planarized with CMP and then etched except around the gates, using a oversize poly-silicon gate mask. Inter-level dielectric mask is then deposited, contact holes etched, and contact metal is deposited to form the transistor. During contact hole etch over poly-silicon gate, silicon nitride around the poly gate acts as an etch stop.