Abstract: A driving mechanism for moving an optical element is provided. The driving mechanism includes a fixed part, a movable part, and a driving assembly. The movable part is movably connected to the fixed part for holding the optical element. The driving assembly is configured for moving the movable part relative to the fixed part.

Abstract: Disclosed herein are system, method and/or computer program product embodiments, and/or combinations and sub-combinations thereof, for enhancing a picture quality of visual content rendered for display by a media device. In an embodiment, the media device reconstructs a video frame from a video signal that is received by the media device, provides the video frame as input to a machine learning model that outputs a set of picture quality parameter values based on the video frame, receives the set of picture quality parameter values output by the machine learning model, modifies the video frame based on the set of picture quality parameter values to generate a modified video frame, and provides the modified video frame to a display device for presentation thereby.

Abstract: A method of identifying a whiteboard based on image tokens includes setting a plurality of image tokens on the whiteboard, obtaining an image including the whiteboard from a camera, employing hardware or software techniques to detect image shaking in order to prevent a display of non-relevant content or privacy-sensitive information, detecting image tokens of the whiteboard by using a machine learning model, applying token tracking to the image tokens to enhance stability and robustness of token detection, calculating coordinates of the image tokens, determining an optimal mapping matrix based on the coordinates of the image tokens, mapping the image based on the optimal mapping matrix to generate a mapped image of the whiteboard, and displaying the mapped image on a screen.

Abstract: The present disclosure relates to an integrated circuit (IC) structure. The IC structure includes a semiconductor device having a frontside and a backside opposite the frontside. A first interconnect structure disposed on the frontside of the semiconductor device. The first interconnect structure comprises a first dielectric structure having a plurality of inter-level dielectric (ILD) layers. A second dielectric structure disposed on the backside of the semiconductor device. The second dielectric structure comprises a first high thermal conductivity layer having a thermal conductivity greater than that of the ILD layers.

Abstract: Semiconductor devices and methods are disclosed herein. In one example, a disclosed semiconductor device includes: an insulation layer, a first electrode with sidewalls and a bottom surface in contact with the insulation layer; a second electrode with sidewalls and a bottom surface in contact with the insulation layer; and an insulator formed between the first electrode and the second electrode. The insulator is coupled to a sidewall of the first electrode and coupled to a sidewall of the second electrode.

Abstract: A communication device includes a dielectric substrate, an antenna layer, a metamaterial layer, a first absorber element, a second absorber element, and a third absorber element. The dielectric substrate has a first surface and a second surface which are opposite to each other. The antenna layer is disposed on the first surface of the dielectric substrate. The metamaterial layer is adjacent to the antenna layer. The antenna layer and the metamaterial layer are both positioned between the first absorber element and the second absorber element. The third absorber element is disposed on the second surface of the dielectric substrate.

Abstract: An optical package structure is provided. The optical package structure includes a carrier, an optical emitter, an optical receiver, an optical barrier, and an insulating structure. The optical emitter and the optical receiver are over the carrier. The optical barrier is over the carrier and between the optical emitter and the optical receiver, wherein the optical barrier defines a cavity. The insulating structure is filled in the cavity, wherein an elevation of a top surface of the insulating structure is lower than an elevation of a top surface of the optical barrier with respect to a surface of the carrier.

Abstract: An electronic apparatus with a two-way cable connection construction is provided. The electronic apparatus includes a casing kit and an electronic device. The casing kit includes a casing, a main circuit board and an auxiliary circuit board. The main circuit board and the auxiliary circuit board are disposed inside the casing. The auxiliary circuit board and the main circuit board are electrically connected to each other and non-coplanar with each other. When the electronic device is inserted into a mounting slot of the casing along a first direction, a mating electrical connector of the electronic device is connected to a first electrical connector of the auxiliary circuit board. When the electronic device is inserted into the mounting slot of the casing along a second direction opposite to the first direction, the mating electrical connector of the electronic device is connected to a second electrical connector of the auxiliary circuit board.

Abstract: A modulator heater structure may include a plurality of regions having different thicknesses. For example, a heater ring of the modulator heater structure may have a first thickness. A heater pad of the modulator heater structure, that is configured to provide an electrical current to the heater ring, may have a second thickness that is greater than the first thickness. The lesser thickness of the heater ring of the modulator heater structure provides high electrical resistance in the heater ring, which enables the heater ring to quickly and efficiently generate heat. The greater thickness of the heater pad provides low electrical resistance in the second region, which enables the electrical current to be efficiently provided through the heater pad to the heater ring with reduced heat dissipation in the hear pad due to the lower electrical current dissipation in the heater pad.

Abstract: An image segmentation method includes the following steps: obtaining a target image; inputting the target image into a machine learning model to obtain an image segmentation parameter value corresponding to the target image; executing an image segmentation algorithm on the target image according to the image segmentation parameter value to obtain an image segmentation result, wherein the image segmentation result is segmenting the target image into object regions; and displaying the image segmentation result. In addition, an electronic device and storage medium using the method are also provided.

Abstract: An antenna structure and an electronic device are provided. The electronic device includes a housing and an antenna structure disposed in the housing. The antenna structure includes a carrier having a first carrying part and a second carrying part connected to each other, a switching circuit, a first radiating element, and a second radiating element. A thickness of the first carrying part is greater than a thickness of the second carrying part. The second carrying part includes a circuit layer and a ground layer respectively formed on opposite surfaces of the second carrying part. The switching circuit is located on the circuit layer. The first radiating element and the second radiating element are disposed on the carrier and respectively electrically connected to a feed element and the switching circuit. The second radiating element and the first radiating element are apart from and couple with each other.

Abstract: Semiconductor devices and methods are disclosed herein. In one example, a disclosed semiconductor device includes: an insulation layer, a first electrode with sidewalls and a bottom surface in contact with the insulation layer; a second electrode with sidewalls and a bottom surface in contact with the insulation layer; and an insulator formed between the first electrode and the second electrode. The insulator is coupled to a sidewall of the first electrode and coupled to a sidewall of the second electrode.

Abstract: A semiconductor device package includes a first conductive layer, a second conductive layer and a third conductive layer. The first conductive layer has a first pitch. The second conductive layer has a second pitch and is arranged at two different sides of the first conductive layer. The third conductive layer has a third pitch and is disposed above the first conductive layer and the second conductive layer. The third conductive layer is electrically connected to the first conductive layer. The first pitch is smaller than the third pitch, and the third pitch is smaller than the second pitch.

Abstract: One of the semiconductor devices includes a semiconductor substrate, a passivation layer and a conductive pattern. The semiconductor substrate includes a conductive pad thereover. The passivation layer over the semiconductor substrate. The conductive pattern is penetrating through the passivation layer and electrically connected to the conductive pad, wherein a sidewall of the conductive pattern interfacing with the passivation layer and the conductive pad has at least one turning point.

Abstract: Semiconductor device and method of forming the same are disclosed. One of the semiconductor devices includes a semiconductor substrate, a passivation layer and a conductive pattern. The semiconductor substrate includes a conductive pad thereover. The passivation layer over the semiconductor substrate. The conductive pattern is penetrating through the passivation layer and electrically connected to the conductive pad, wherein a sidewall of the conductive pattern has at least one turning point.

Abstract: A semiconductor structure and method of manufacture is provided. In some embodiments, a semiconductor structure includes a semiconductor layer, a first isolation structure in the semiconductor layer, a first gate structure adjacent a first side of the first isolation structure, a first source/drain region adjacent a second side of the first isolation structure, a second source/drain region adjacent the first gate structure, and a first conductive field plate at least partially embedded in the first isolation structure.

Abstract: A semiconductor device package includes a first conductive layer, a second conductive layer and a third conductive layer. The first conductive layer has a first pitch. The second conductive layer has a second pitch and is arranged at two different sides of the first conductive layer. The third conductive layer has a third pitch and is disposed above the first conductive layer and the second conductive layer. The third conductive layer is electrically connected to the first conductive layer. The first pitch is smaller than the third pitch, and the third pitch is smaller than the second pitch.

Abstract: Semiconductor devices and methods are disclosed herein. In one example, a disclosed semiconductor device includes: an insulation layer, a first electrode with sidewalls and a bottom surface in contact with the insulation layer; a second electrode with sidewalls and a bottom surface in contact with the insulation layer; and an insulator formed between the first electrode and the second electrode. The insulator is coupled to a sidewall of the first electrode and coupled to a sidewall of the second electrode.

Abstract: A system and method for performing circuit design analysis obtains a circuit design comprising cells. The cells are associated with cell types. Aging parameters of a core analytical model are determined for each of the cell types in the circuit design to generate a calibrated analytical model. Aging effects for the cells are determined based on the calibrated analytical model and target stress conditions. An aged timing model is determined for the cell types based on the aging effects, an unaged timing model, and the target stress conditions.

Abstract: A communication device includes a dielectric substrate, an antenna layer, a metamaterial layer, a first absorber element, a second absorber element, and a third absorber element. The dielectric substrate has a first surface and a second surface which are opposite to each other. The antenna layer is disposed on the first surface of the dielectric substrate. The metamaterial layer is adjacent to the antenna layer. The antenna layer and the metamaterial layer are both positioned between the first absorber element and the second absorber element. The third absorber element is disposed on the second surface of the dielectric substrate.