Abstract: A method for installing door components includes at least the following steps: a. providing at least one preconfigured door system type by way of an electronic configuration system for selection by a user, wherein the at least one preconfigured door system type is able to be retrieved from a database by way of the electronic configuration system, wherein at least one preconfigured door system type is able to be preselected by the configuration system by way of at least one technical and/or functional user specification, wherein the door system type contains stipulated door component types, and b. electronically providing preconfigured technical data of the selected door system type in order to carry out the installation on site.

Abstract: A door that is adapted to separating two environments with different pressures and to an aircraft with such a door. The door may include a door leaf, a door frame having a door stop and a roller, and an actuating system having a latch element and an inward-moving drive system. The inward-moving drive system may include a puller shaft and a puller that is non-rotatably attached to the puller shaft. The puller may include a guide rail that moves along the roller during a rotation of the puller such that the puller moves the door leaf in direction of the first environment thereby disengaging the latch element from the door stop.

Abstract: A method of depositing a layer includes measuring a physical property that is related to an air pressure in a reactor chamber of a deposition apparatus. A main gas mixture including a source gas and an auxiliary gas is introduced into the reactor chamber at atmospheric pressure, the source gas including a precursor material and a carrier gas. A gas flow of at least one of the source gas and the auxiliary gas into the reactor chamber is controlled in response to a change of the air pressure in the reactor chamber.

Abstract: A door that is adapted to separating two environments with different pressures and to an aircraft with such a door. The door may include a door leaf, a door frame having a door stop and a roller, and an actuating system having a latch element and an inward-moving drive system. The inward-moving drive system may include a puller shaft and a puller that is non-rotatably attached to the puller shaft. The puller may include a guide rail that moves along the roller during a rotation of the puller such that the puller moves the door leaf in direction of the first environment thereby disengaging the latch element from the door stop.

Abstract: A method of forming a silicon layer includes introducing a source gas containing a precursor material and a carrier gas into a reactor, controlling a gas flow of the source gas through a first main flow controller unit in response to a change of a concentration of the precursor material in the source gas, introducing an auxiliary gas into the reactor, and controlling a gas flow of the auxiliary gas through a second main flow controller unit such that a total gas flow of the source gas and the auxiliary gas into the reactor is held constant when the gas flow of the source gas changes.

Abstract: A semiconductor device include a semiconductor body with a drain region of a first conductivity type, a drift region of the first conductivity type and having a doping concentration lower than a doping concentration of the drain region, a buffer region of the first conductivity type arranged between the drift region and the drain region, a source region of the first conductivity type, a body region of a second conductivity type arranged between the source region and the drift region and forming a first pn-junction with the source region and a second pn-junction with the drift region, and a charge compensation region of the second conductivity type extending from the body region towards the buffer region. A source metallization is in ohmic contact with the source region. A drain metallization is ohmic contact with the drain region.

Abstract: A method of depositing a layer includes measuring a physical property that is related to an air pressure in a reactor chamber of a deposition apparatus. A main gas mixture including a source gas and an auxiliary gas is introduced into the reactor chamber at atmospheric pressure, the source gas including a precursor material and a carrier gas. A gas flow of at least one of the source gas and the auxiliary gas into the reactor chamber is controlled in response to a change of the air pressure in the reactor chamber.

Abstract: A method of forming a silicon layer includes introducing a source gas containing a precursor material and a carrier gas into a reactor, controlling a gas flow of the source gas through a first main flow controller unit in response to a change of a concentration of the precursor material in the source gas, introducing an auxiliary gas into the reactor, and controlling a gas flow of the auxiliary gas through a second main flow controller unit such that a total gas flow of the source gas and the auxiliary gas into the reactor is held constant when the gas flow of the source gas changes.

Abstract: A semiconductor device include a semiconductor body with a drain region of a first conductivity type, a drift region of the first conductivity type and having a doping concentration lower than a doping concentration of the drain region, a buffer region of the first conductivity type arranged between the drift region and the drain region, a source region of the first conductivity type, a body region of a second conductivity type arranged between the source region and the drift region and forming a first pn-junction with the source region and a second pn-junction with the drift region, and a charge compensation region of the second conductivity type extending from the body region towards the buffer region. A source metallization is in ohmic contact with the source region. A drain metallization is ohmic contact with the drain region.

Abstract: The present invention relates to the use of specific carbazole derivatives in the preparation of medicaments for the treatment, prevention and/or amelioration of disorders relating to pathological processes in lipid rafts.

Abstract: The present invention relates to specific sphingolipids/sphingolipid derivatives as pharmaceutical compositions as well as their use in the preparation of medicaments for the treatment, prevention and/or amelioration of disorders relating to pathological processes in lipid rafts.

Abstract: The present invention relates to a compound comprising a tripartite structure in the format C-B-A or C?-B?-A? wherein moiety A and moiety A? is a raftophile, moiety B and moiety B? is a linker, moiety C and moiety C? is a pharmacophore; and wherein moiety B and B? is a linker which has a backbone of at least 8 carbon atoms and wherein one or more of said carbon atoms may be replaced by nitrogen, oxygen or sulfur. Furthermore, specific medical and pharmaceutical uses of the compounds of the invention are disclosed.

Abstract: The present invention relates to the use of specific steroid derivatives in the preparation of medicaments for the treatment or prevention and/or amelioration of disorders relating to pathological processes in lipid rafts.

Abstract: The present invention relates to specific sphingolipids/sphingolipid derivatives as pharmaceutical compositions as well as their use in the preparation of medicaments for the treatment, prevention and/or amelioration of disorders relating to pathological processes in lipid rafts.

Abstract: The invention relates to a method of preparing immunogenically active, lipid and detergent free soluble aggregates of amphiphilic membrane proteins of influenza and parainfluenza viruses and rhabdoviruses.