Patents by Inventor Kai W. Jansen

Kai W. Jansen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6288325
    Abstract: High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate.
    Type: Grant
    Filed: May 4, 2000
    Date of Patent: September 11, 2001
    Assignee: BP Corporation North America Inc.
    Inventors: Kai W. Jansen, Nagi Maley
  • Patent number: 6077722
    Abstract: High performance photovoltaic modules are produced with improved interconnects by a special process. Advantageously, the photovoltaic modules have a dual layer back (rear) contact and a front contact with at least one layer. The front contact and the inner layer of the back contact can comprise a transparent conductive oxide. The outer layer of the back contact can comprise a metal or metal oxide. The front contact can also have a dielectric layer. In one form, the dual layer back contact comprises a zinc oxide inner layer and an aluminum outer layer and the front contact comprises a tin oxide inner layer and a silicon dioxide dielectric outer layer. One or more amorphous silicon-containing thin film semiconductors can be deposited between the front and back contacts. The contacts can be positioned between a substrate and an optional superstrate.
    Type: Grant
    Filed: July 14, 1998
    Date of Patent: June 20, 2000
    Assignee: BP Solarex
    Inventors: Kai W. Jansen, Nagi Maley
  • Patent number: 5496583
    Abstract: The present invention relates to the production of hydrogen fluoride dopant source gases for use in the production of conductive coatings on a substrate. More specifically, a fluorocarbon source gas is decomposed in the presence of oxygen to yield HF which is passed to a deposition furnace wherein a fluoride doped metal oxide coated glass substrate is prepared.
    Type: Grant
    Filed: August 29, 1994
    Date of Patent: March 5, 1996
    Assignee: Amoco/Enron Solar
    Inventors: Kai W. Jansen, Benjamin F. Fieselmann