Patents by Inventor Kai-Wei Nieh

Kai-Wei Nieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fabrication of nanometer single crystal metallic CoSi.sub.2 structures on Si
    Patent number: 5075243
    Abstract: Amorphous Co:Si (1:2 ratio) films (12) are electron gun-evaporated on clean Si(111) substrates (10), such as in a molecular beam epitaxy system. These layers are then crystallized selectively with a focused electron beam (14) to form very small crystalline CoSi.sub.2 regions (12') in an amorphous matrix. Finally, the amorphous regions are etched away selectively using plasma or chemical techniques.
    Type: Grant
    Filed: March 27, 1991
    Date of Patent: December 24, 1991
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventors: Kai-Wei Nieh, True-Lon Lin, Robert W. Fathauer