Abstract: According to various embodiments, a miniature passive structure for electrostatic discharge protection and input/output matching for a high frequency integrated circuit may be provided. The structure may include: either a transmission line or an inductor for providing at least one electrostatic discharge path; and a capacitor with a first end connected to the transmission line or inductor and a second end connected to ground.

Abstract: A fully integrated silicon-based bandpass filter which lends itself to applications in the gigahertz region is disclosed. The bandpass filter is fabricated on an integrated circuit and operates as a microwave/millimeter-wave filtering circuit. In accordance with one aspect, the bandpass filter includes a first set and a second set of filter coupled elements, a three-port “T” transmission line junction and a perturbing element. The three-port “T” transmission line junction has a first port coupled to a first end of a first one of the first set of filter coupled elements and a second port coupled to a first end of a first one of the second set of filter coupled elements. The perturbing element is coupled to a third port of the three-port “T” transmission line junction. A second one of the first set of filter coupled elements includes an input transmission line and has a first end thereof coupled to an input port and an opposite end thereof having an open end.

Abstract: A miniature passive structure for electrostatic discharge (ESD) protection and input/output (I/O) matching for a high frequency integrated circuit is provided. The miniature passive structure includes at least one shunt stub and at least one load line. The shunt stub(s) each provide a corresponding ESD discharge path. The load line(s) are coupled to the shunt stub(s) and provide loading effects for the shunt stub(s).

Abstract: An integrated circuit for a radio frequency (RF) circuit such as a voltage controlled oscillator or an injection locked frequency divider is provided. The integrated circuit architecture includes a primary LC tank circuit comprising a first inductor and a first capacitive device connected in parallel and one or more secondary LC tank circuits, each comprising an inductor and a capacitive device connected in parallel. Each of the one or more secondary LC tank circuits is strongly coupled to the primary LC tank circuit and to each other either electrically, magnetically or a combination of electrically and magnetically.

Abstract: A low pass filter circuit (100) structure is provided. The low pass filter circuit structure includes first and second dominant inductor (114, 116)s, a first capacitor (120) and first and second shunt capacitors (122, 124). The first dominant inductor has a first end and a second end and the second dominant inductor has a first end and a second end. The second end of the first dominant inductor is electrically connected to the second end of the second dominant inductor. The first capacitor is electrically coupled between the first end of the first dominant inductor and the first end of the second dominant inductor. The first shunt capacitor is electrically coupled between the first end of the first dominant inductor and a ground potential, and the second shunt capacitor is electrically coupled between the first end of the second dominant inductor and the group potential.

Abstract: Designs and techniques for improving the linearity of the power amplifiers, especially of the non-linear types, operated in microwave and millimeter-wave frequency using method through purposely designed active transistors or passive devices or both, are disclosed. The techniques use the manipulation of transistors' cut-off frequencies (fT) design, attached loaded linearization stub and characteristics of space attenuation of microwave signals individually or in combination of them. The disclosed techniques provide the advantages to compromise the performance among linearity, gain and power consumption in a wide range of power amplifier types, such as Class-AB, B, C, D, E and F in the different application scenarios.

Abstract: According to various embodiments, a miniature passive structure for electrostatic discharge protection and input/output matching for a high frequency integrated circuit may be provided. The structure may include: either a transmission line or an inductor for providing at least one electrostatic discharge path; and a capacitor with a first end connected to the transmission line or inductor and a second end connected to ground.

Abstract: A miniature passive structure for electrostatic discharge (ESD) protection and input/output (I/O) matching for a high frequency integrated circuit is provided. The miniature passive structure includes at least one shunt stub and at least one load line. The shunt stub(s) each provide a corresponding ESD discharge path. The load line(s) are coupled to the shunt stub(s) and provide loading effects for the shunt stub(s).

Abstract: A fully integrated silicon-based bandpass filter which lends itself to applications in the gigahertz region is disclosed. The bandpass filter is fabricated on an integrated circuit and operates as a microwave/millimeter-wave filtering circuit. In accordance with one aspect, the bandpass filter includes a first set and a second set of filter coupled elements, a three-port “T” transmission line junction and a perturbing element. The three-port “T” transmission line junction has a first port coupled to a first end of a first one of the first set of filter coupled elements and a second port coupled to a first end of a first one of the second set of filter coupled elements. The perturbing element is coupled to a third port of the three-port “T” transmission line junction. A second one of the first set of filter coupled elements includes an input transmission line and has a first end thereof coupled to an input port and an opposite end thereof having an open end.

Abstract: Designs and techniques for improving the linearity of the power amplifiers, especially of the non-linear types, operated in microwave and millimeter-wave frequency using method through purposely designed active transistors or passive devices or both, are disclosed. The techniques use the manipulation of transistors' cut-off frequencies (fT) design, attached loaded linearization stub and characteristics of space attenuation of microwave signals individually or in combination of them. The disclosed techniques provide the advantages to compromise the performance among linearity, gain and power consumption in a wide range of power amplifier types, such as Class- AB, B, C, D, E and F in the different application scenarios.

Abstract: A low pass filter circuit (100) structure is provided. The low pass filter circuit structure includes first and second dominant inductor (114, 116)s, a first capacitor (120) and first and second shunt capacitors (122, 124). The first dominant inductor has a first end and a second end and the second dominant inductor has a first end and a second end. The second end of the first dominant inductor is electrically connected to the second end of the second dominant inductor. The first capacitor is electrically coupled between the first end of the first dominant inductor and the first end of the second dominant inductor. The first shunt capacitor is electrically coupled between the first end of the first dominant inductor and a ground potential, and the second shunt capacitor is electrically coupled between the first end of the second dominant inductor and the group potential.

Abstract: An integrated circuit for a radio frequency (RF) circuit such as a voltage controlled oscillator or an injection locked frequency divider is provided. The integrated circuit architecture includes a primary LC tank circuit comprising a first inductor and a first capacitive device connected in parallel and one or more secondary LC tank circuits, each comprising an inductor and a capacitive device connected in parallel. Each of the one or more secondary LC tank circuits is strongly coupled to the primary LC tank circuit and to each other either electrically, magnetically or a combination of electrically and magnetically.