Abstract: Disclosed is a method of oxidizing a cycloalkane to form a product mixture containing a corresponding alcohol and ketone, said method comprising contacting a cycloalkane with a hydroperoxide in the presence of a catalytic effective amount of a crystalline MWW-type titanosilicate catalyst. Hydroperoxides may notably be tert-butyl hydroperoxide, tert-amyl hydroperoxide, cumene hydroperoxide, ethylbenzene hydroperoxide, cyclohexyl hydroperoxide, methylcyclohexyl hydroperoxide, tetralin hydroperoxide, isobutylbenzene hydroperoxide, and ethylnaphthalene hydroperoxide.

Abstract: According to various embodiments, a miniature passive structure for electrostatic discharge protection and input/output matching for a high frequency integrated circuit may be provided. The structure may include: either a transmission line or an inductor for providing at least one electrostatic discharge path; and a capacitor with a first end connected to the transmission line or inductor and a second end connected to ground.

Abstract: A method for avoiding using CMP for eliminating electroplated copper facets and reusing barrier layer in the back end of line (“BEOL”) manufacturing processes. Electropolishing is employed to remove the deposited surface metal, stopping at the barrier layer to form a smooth surface that may be utilized in subsequent steps. The method is suitable for the electropolishing of metal surfaces after formation of filled vias for through-silicon via processes employing metals such as copper, tungsten, aluminum, or alloys thereof. The remaining barrier layer may be reused to fabricate the redistribution layer.

Abstract: A parasitic lateral PNP transistor is disclosed, in which, an N-type implanted region formed in each of two adjacent active regions forms a base region; a P-type doped polysilicon pseudo buried layer located under a shallow trench field oxide region between the two active regions serves as an emitter; and a P-type doped polysilicon pseudo buried layer located under each of the shallow trench field oxide regions on the outer side of the active regions serves as a collector region. The transistor has a C-B-E-B-C structure which alters the current path in the base region to a straight line, which can improve the current amplification capacity of the transistor and thus leads to a significant improvement of its current gain and frequency characteristics, and is further capable of reducing the area and increasing current intensity of the transistor. A manufacturing method of the parasitic lateral PNP transistor is also disclosed.

Abstract: A method of filling shallow trenches is disclosed. The method includes: successively forming a first oxide layer and a second oxide layer over the surface of a silicon substrate where shallow trenches are formed in; etching the second oxide layer to form inner sidewalls with an etchant which has a high etching selectivity ratio of the second oxide layer to the first oxide layer; growing a high-quality pad oxide layer by thermal oxidation after the inner sidewalls are removed; and filling the trenches with an isolation dielectric material. By using this method, the risk of occurrence of junction spiking and electrical leakage during a subsequent process of forming a metal silicide can be reduced.

Abstract: A miniature passive structure for electrostatic discharge (ESD) protection and input/output (I/O) matching for a high frequency integrated circuit is provided. The miniature passive structure includes at least one shunt stub and at least one load line. The shunt stub(s) each provide a corresponding ESD discharge path. The load line(s) are coupled to the shunt stub(s) and provide loading effects for the shunt stub(s).

Abstract: A fully integrated silicon-based bandpass filter which lends itself to applications in the gigahertz region is disclosed. The bandpass filter is fabricated on an integrated circuit and operates as a microwave/millimeter-wave filtering circuit. In accordance with one aspect, the bandpass filter includes a first set and a second set of filter coupled elements, a three-port “T” transmission line junction and a perturbing element. The three-port “T” transmission line junction has a first port coupled to a first end of a first one of the first set of filter coupled elements and a second port coupled to a first end of a first one of the second set of filter coupled elements. The perturbing element is coupled to a third port of the three-port “T” transmission line junction. A second one of the first set of filter coupled elements includes an input transmission line and has a first end thereof coupled to an input port and an opposite end thereof having an open end.

Abstract: Designs and techniques for improving the linearity of the power amplifiers, especially of the non-linear types, operated in microwave and millimeter-wave frequency using method through purposely designed active transistors or passive devices or both, are disclosed. The techniques use the manipulation of transistors' cut-off frequencies (fT) design, attached loaded linearization stub and characteristics of space attenuation of microwave signals individually or in combination of them. The disclosed techniques provide the advantages to compromise the performance among linearity, gain and power consumption in a wide range of power amplifier types, such as Class- AB, B, C, D, E and F in the different application scenarios.

Abstract: A low pass filter circuit (100) structure is provided. The low pass filter circuit structure includes first and second dominant inductor (114, 116)s, a first capacitor (120) and first and second shunt capacitors (122, 124). The first dominant inductor has a first end and a second end and the second dominant inductor has a first end and a second end. The second end of the first dominant inductor is electrically connected to the second end of the second dominant inductor. The first capacitor is electrically coupled between the first end of the first dominant inductor and the first end of the second dominant inductor. The first shunt capacitor is electrically coupled between the first end of the first dominant inductor and a ground potential, and the second shunt capacitor is electrically coupled between the first end of the second dominant inductor and the group potential.

Abstract: An integrated circuit for a radio frequency (RF) circuit such as a voltage controlled oscillator or an injection locked frequency divider is provided. The integrated circuit architecture includes a primary LC tank circuit comprising a first inductor and a first capacitive device connected in parallel and one or more secondary LC tank circuits, each comprising an inductor and a capacitive device connected in parallel. Each of the one or more secondary LC tank circuits is strongly coupled to the primary LC tank circuit and to each other either electrically, magnetically or a combination of electrically and magnetically.

Abstract: The present invention discloses a charging device for a portable electronic product with a charging circuit, including: a mechanical energy collecting device configured on a main body of the portable electronic product, adapted to collect and store part of mechanical energy of a user of the portable electronic product; a mechanical energy-electrical energy converting device coupled with the mechanical energy collecting device, adapted to convert mechanical energy stored by the mechanical energy collecting device into electrical energy; and a processing circuit connected between an output end of the mechanical energy-electrical energy converting device and an input end of the charging circuit of the portable electronic product, adapted to process energy output from the mechanical energy-electrical energy converting device and input processed energy to the charging circuit of the portable electronic product.

Abstract: The present invention discloses a charging device for a portable electronic product with a charging circuit, including: a mechanical energy collecting device configured on a main body of the portable electronic product, adapted to collect and store part of mechanical energy of a user of the portable electronic product; a mechanical energy-electrical energy converting device coupled with the mechanical energy collecting device, adapted to convert mechanical energy stored by the mechanical energy collecting device into electrical energy; and a processing circuit connected between an output end of the mechanical energy-electrical energy converting device and an input end of the charging circuit of the portable electronic product, adapted to process energy output from the mechanical energy-electrical energy converting device and input processed energy to the charging circuit of the portable electronic product.