Abstract: Present invention is related to a tumor microenvironment on chip or a biochip for cell therapy having a carrier, a first cell or tissue culture area and a second cell or tissue area imbedded within the carrier. The present invention provides a biochip successfully cooperating micro fluidic technology and cell culture achieving the goal for detecting or testing the function of cell therapy for cancer or tumor.

Abstract: A cooling system includes a tank, a heat exchanger, a separation tank, a first tube, a second tube, a third tube, a gas storage device, a fourth tube, a first valve, a second valve and a third valve. A heating element is immersed in a dielectric liquid in the tank. The heat exchanger condenses dielectric vapor of the dielectric liquid. The separation tank is used for a separation operation. The first tube is connected to the tank and the heat exchanger. The second tube is connected to the heat exchanger and the separation tank. The third tube is connected to the separation tank and the tank. The gas storage device stores the dielectric vapor. The fourth tube is connected to the gas storage device and the separation tank.

Abstract: A method of performing automatic tuning on a deep learning model includes: utilizing an instruction-based learned cost model to estimate a first type of operational performance metrics based on a tuned configuration of layer fusion and tensor tiling; utilizing statistical data gathered during a compilation process of the deep learning model to determine a second type of operational performance metrics based on the tuned configuration of layer fusion and tensor tiling; performing an auto-tuning process to obtain a plurality of optimal configurations based on the first type of operational performance metrics and the second type of operational performance metrics; and configure the deep learning model according to one of the plurality of optimal configurations.

Abstract: A condenser includes a casing and pipes. The casing includes an inlet chamber, an outlet chamber, a first inlet, a first outlet, an accommodation space, a second inlet, and a second outlet. The first inlet and the first outlet are respectively in fluid communication with the inlet chamber and the outlet chamber. The accommodation space accommodates a coolant, and the second inlet and the second outlet are in fluid communication with the accommodation space not in fluid communication with the inlet chamber and the outlet chamber. The pipes are in the accommodation space and connect the inlet chamber with the outlet chamber, and a working fluid flows from the inlet chamber to the outlet chamber via the pipes. The first inlet is located closer to the second outlet than the first outlet, and the first outlet is located closer to the second inlet than the first inlet.

Abstract: A cooling system of server includes a tank and a pressure control device. The tank is configured to accommodate a dielectric fluid. The pressure control device is configured to regulate the pressure of the tank. The pressure control device includes a condenser, a dehumidifier, a gas storage chamber, and a valve. The condenser is connected to the tank. The dehumidifier is connected to the condenser. The gas storage chamber is connected to the dehumidifier. The valve is connected between the dehumidifier and the gas storage chamber. The valve is configured to communicate and not to communicate the dehumidifier and the gas storage chamber.

Abstract: Interconnect structure packages (e.g., through silicon vias (TSV) packages, through interlayer via (TIV) packages) may be pre-manufactured as opposed to forming TIVs directly on a carrier substrate during a manufacturing process for a semiconductor die package at backend packaging facility. The interconnect structure packages may be placed onto a carrier substrate during manufacturing of a semiconductor device package, and a semiconductor die package may be placed on the carrier substrate adjacent to the interconnect structure packages. A molding compound layer may be formed around and in between the interconnect structure packages and the semiconductor die package.

Abstract: A liquid level controlling apparatus includes a plurality of main sinks, a storage sink, a pump and a connection tube. One of the plurality of main sinks includes a transmission port and a first liquid level detector. The storage sink includes a delivery port and a second liquid level detector. The pump includes an outlet and an inlet. The connection tube includes an rehydration tube and an drain tube. The rehydration tube has a first rehydration section and a second rehydration section. The first rehydration section is connected between the delivery port and the inlet. The second rehydration section is connected between the outlet and the transmission port. The drain tube has a first drain section and a second drain section. The first drain section is connected between the transmission port and the inlet. The second drain section is connected between the outlet and the delivery port.

Abstract: A semiconductor device includes source/drain regions, a gate structure, a first gate spacer, and a dielectric material. The source/drain regions are over a substrate. The gate structure is laterally between the source/drain regions. The first gate spacer is on a first sidewall of the gate structure, and spaced apart from a first one of the source/drain regions at least in part by a void region. The dielectric material is between the first one of the source/drain regions and the void region. The dielectric material has a gradient ratio of a first chemical element to a second chemical element.

Abstract: A liquid level controlling system includes a main sink, a storage sink and a connection tube. The main sink includes a transmission port and a first liquid level detector. The transmission port is formed on a bottom of the main sink. The first liquid level detector is disposed on a top of the main sink. The storage sink includes a liquid outlet, a liquid inlet and a second liquid level detector. The connection tube is disposed between the main sink and the storage sink. The connection tube includes an rehydration tube and an drain tube. Two ends of the rehydration tube are respectively connected to the transmission port and the liquid outlet. Two ends of the drain tube are respectively connected to the transmission port and the liquid inlet.

Abstract: A resin composition and a metal clad substrate are provided. The resin composition includes: 20 phr to 40 phr of an epoxy resin, 40 phr to 60 phr of a modified benzoxazine resin, 2 phr to 10 phr of a maleimide resin, and 25 phr to 50 phr of fillers. The modified benzoxazine resin contains a DOPO group. Based on a total weight of the modified benzoxazine resin being 100 wt %, an amount of the DOPO group ranges from 10 wt % to 20 wt %.

Abstract: A prepreg, a laminated board, and a printed circuit board thereof are provided. The prepreg includes a halogen-free epoxy resin composition and a partially cured non-woven reinforcing material impregnated therein. The non-woven reinforcing material has a dielectric strength of 1.5 to 4.8 and a loss factor that is less than 0.003 at 10 GHz, and the halogen-free epoxy resin composition includes: (a) 100 parts by weight of a halogen-free naphthalene type epoxy resin, (b) 10 to 25 parts by weight of a DOPO modifying curing agent, (c) 25 to 45 parts by weight of a cyanate resin, (d) 35 to 60 parts by weight of bismaleimide, (e) 45 to 65 parts by weight of a non-DOPO flame retardant, and (f) 0.5 to 15 parts by weight of a curing accelerator.

Abstract: The present invention discloses a halogen-free epoxy resin composition having low dielectric loss, comprises: (A) 100 parts by weight of an epoxy resin; (B) 10-30 parts by weight of a DOPO modified curing agent; (C) 1-10 parts by weight of benzoxazine resin; (D) 60-90 parts by weight of an active ester compound; (E) 20-50 parts by weight of a flame retardant; and (F) 0.5-10 parts by weight of a curing accelerator. The halogen-free epoxy resin composition uses active ester as a curing agent of the epoxy resin to ensure that the hardening product has characteristics such as low dielectric constant (Dk), low dielectric loss (Df), high heat resistance, low water absorption, flame retardant and halogen-free. The halogen-free epoxy resin composition of the present invention is used for manufacturing semi-cured prepregs or resin-coated films, and is applied toward manufacturing metal clad laminates and printed circuit boards.

Abstract: A laminated substrate including a halogen-free epoxy resin composition. The halogen-free epoxy resin composition includes 100 parts by weight of a halogen-free naphthalene type epoxy resin, 10 to 25 parts by weight of a DOPO modified curing agent, 25 to 45 parts by weight of a cyanate resin, 35 to 60 parts by weight of bismaleimide, 45 to 65 parts by weight of a non-DOPO flame retardant, and 0.5 to 15 parts by weight of a curing accelerator. The laminated substrate of the present disclosure includes a halogen-free epoxy resin composition which has the characteristic of high transition temperature, so that the halogen-free epoxy resin composition has low dielectric constant, low dissipation factor, high heat resistance and high storage modulus.

Abstract: A laminated substrate including a halogen-free epoxy resin composition. The halogen-free epoxy resin composition includes 100 parts by weight of a halogen-free naphthalene type epoxy resin, 10 to 25 parts by weight of a DOPO modified curing agent, 25 to 45 parts by weight of a cyanate resin, 35 to 60 parts by weight of bismaleimide, 45 to 65 parts by weight of a non-DOPO flame retardant, and 0.5 to 15 parts by weight of a curing accelerator. The laminated substrate of the present disclosure includes a halogen-free epoxy resin composition which has the characteristic of high transition temperature, so that the halogen-free epoxy resin composition has low dielectric constant, low dissipation factor, high heat resistance and high storage modulus.

Abstract: The present invention discloses a halogen-free epoxy resin composition having low dielectric loss, comprises: (A) 100 parts by weight of an epoxy resin; (B) 10-30 parts by weight of a DOPO modified curing agent; (C) 1-10 parts by weight of benzoxazine resin; (D) 60-90 parts by weight of an active ester compound; (E) 20-50 parts by weight of a flame retardant; and (F) 0.5-10 parts by weight of a curing accelerator. The halogen-free epoxy resin composition uses active ester as a curing agent of the epoxy resin to ensure that the hardening product has characteristics such as low dielectric constant (Dk), low dielectric loss (Df), high heat resistance, low water absorption, flame retardant and halogen-free. The halogen-free epoxy resin composition of the present invention is used for manufacturing semi-cured prepregs or resin-coated films, and is applied toward manufacturing metal clad laminates and printed circuit boards.