Patents by Inventor Kai-Yi Huang
Kai-Yi Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240112323Abstract: A method for detecting defects on a wafer including the steps of obtaining a reference image of a chip pattern formed on a reference wafer, using a computer algorithm to analyze the reference image to produce a division map for the chip pattern; setting respective thresholds for divisions of the division map, obtaining a comparison data between a test image of the chip pattern formed on a test wafer and the reference image, using the division map and the thresholds to examine the comparison data to identify a defect in the test image.Type: ApplicationFiled: November 17, 2022Publication date: April 4, 2024Applicant: United Semiconductor (Xiamen) Co., Ltd.Inventors: Yu Peng Hong, QINGRONG CHEN, Kai Ping Huang, Chin-Chun Huang, WEN YI TAN
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Patent number: 11916098Abstract: An integrated inductor is provided. The integrated inductor includes a first winding and a second winding, and has a first end, a second end, and a node. The first winding utilizes the first end and the node as two ends thereof and includes a first coil and a second coil, which do not overlap. The second winding utilizes the second end and the node as two ends thereof and includes a third coil and a fourth coil, which do not overlap. The first coil and the third coil have an overlapping area, and the second coil and the fourth coil have an overlapping area. The first coil is surrounded by the third coil, and the fourth coil is surrounded by the second coil.Type: GrantFiled: December 28, 2020Date of Patent: February 27, 2024Assignee: REALTEK SEMICONDUCTOR CORPORATIONInventors: Cheng-Wei Luo, Chieh-Pin Chang, Kai-Yi Huang, Ta-Hsun Yeh
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Patent number: 11848290Abstract: A semiconductor structure includes a first inductor, a second inductor, and a first input/output (I/O) pad. The first I/O pad is coupled to the first inductor and the second inductor. The first I/O pad, a first central axis of a first magnetic field of the first inductor, and a second central axis of a second magnetic field of the second inductor are disposed sequentially along a first direction.Type: GrantFiled: March 31, 2021Date of Patent: December 19, 2023Assignee: REALTEK SEMICONDUCTOR CORPORATIONInventors: Cheng-Wei Luo, Chieh-Pin Chang, Kai-Yi Huang, Ta-Hsun Yeh
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Patent number: 11830648Abstract: Inductor device includes first and a second coils. First coil is wound into plural first circles. Second coil is wound into plural second circles. First connection member is coupled to first circle between outermost and innermost sides among first circles located at first area and first circle on outermost side among first circles located at second area. Second connection member is coupled to second circle on outermost side among second circles located at first area and second circle between outermost and innermost sides among second circles located at second area. At least two first circles of first circles are located at first area, and half of first circle of first circles is located at second area. Half of second circle of second circles is located at first area, and at least two second circles of second circles are located at second area.Type: GrantFiled: September 17, 2020Date of Patent: November 28, 2023Assignee: REALTEK SEMICONDUCTOR CORPORATIONInventors: Chieh-Pin Chang, Cheng-Wei Luo, Kai-Yi Huang, Ta-Hsun Yeh
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Patent number: 11699550Abstract: An inductor structure includes a first curve metal component, a second curve metal component, a connection component, and a capacitor. The first and the second curve metal components are disposed on a layer. The layer is located at a first plane, the first and the second curve metal components are located at a second plane. The connection component is coupled to the first curve metal component and the second curve metal component. A first terminal of the connection component is coupled to a first terminal of the first curve metal component. A second terminal of the connection component is coupled to a first terminal of the second curve metal component. A first terminal of the capacitor is coupled to a second terminal of the first curve metal component. A second terminal of the capacitor is coupled to a second terminal of the second curve metal component.Type: GrantFiled: November 2, 2020Date of Patent: July 11, 2023Assignee: REALTEK SEMICONDUCTOR CORPORATIONInventors: Hsiao-Tsung Yen, Chih-Yu Tsai, Kai-Yi Huang
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Patent number: 11682518Abstract: An inductor device includes a first coil and a second coil. The first coil is wound into a plurality of first circles, and the second coil is wound into a plurality of second circles. At least two of the second circles are interlaced with at least two of the first circles on a first side. The at least two of the second circles are disposed adjacent to each other on the first side. At least one of the first circles is only interlaced with at least one of the second circles on a second side. At least another one of the first circles is only interlaced with at least another one of the second circles on the second side.Type: GrantFiled: June 3, 2020Date of Patent: June 20, 2023Assignee: REALTEK SEMICONDUCTOR CORPORATIONInventors: Chieh-Pin Chang, Cheng-Wei Luo, Kai-Yi Huang, Ta-Hsun Yeh
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Patent number: 11469031Abstract: An apparatus is provided that includes an inductor, a pair of modulating coils, a first switch and a second switch. The inductor includes two sub-loops electrically coupled with each other. The modulating coils include a first modulating coil and a second modulating coil respectively disposed corresponding to each of the two sub-loops. The first switch and the second switch are respectively disposed at the first modulating coil and the second modulating coil. Each of the first modulating coil and the second modulating coil forms an open loop when the first switch and the second switch are under an open status, and each of the first modulating coil and the second modulating coil forms a closed loop when the first switch and the second switch are under a closed status that enables a modulation of an inductance of the inductor.Type: GrantFiled: June 19, 2019Date of Patent: October 11, 2022Assignee: REALTEK SEMICONDUCTOR CORPORATIONInventor: Kai-Yi Huang
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Patent number: 11450599Abstract: An integrated circuit is provided. The integrated circuit includes a first trace, a second trace and a third trace. The first trace, the second trace and the third trace are each a continuous trace. The first trace, the second trace and the third trace together use only two conductor layers of a semiconductor structure. In a crossing area of the first trace, the second trace and the third trace, the first trace crosses the second trace once, the first trace crosses the third trace once, and the second trace crosses the third trace once.Type: GrantFiled: January 8, 2021Date of Patent: September 20, 2022Assignee: REALTEK SEMICONDUCTOR CORPORATIONInventors: Cheng-Wei Luo, Chieh-Pin Chang, Kai-Yi Huang, Ta-Hsun Yeh
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Publication number: 20220270812Abstract: An inductor and an integrated circuit are provided. The inductor includes a first coil, a second coil, and a third coil. The first coil has a first input terminal and a first output terminal, and the first coil is winded in a first direction from the first input terminal to the first output terminal. The second has a second input terminal and a second output terminal, and the second coil is winded in a second direction which is opposite to the first direction from the second input terminal to the second output terminal. The third has a third input terminal and a third output terminal, and the third input terminal is connected to the first input terminal and the second input terminal.Type: ApplicationFiled: April 13, 2021Publication date: August 25, 2022Inventors: Chieh-Pin CHANG, Cheng-Wei LUO, Kai-Yi HUANG, Ta-Hsun YEH
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Publication number: 20220208437Abstract: The present invention discloses an inductor apparatus. Each of a first section of a second and a fourth quadrant loops are bridged to a first section of a former quadrant loop and are bridged to a third section to a second section of a diagonal quadrant loop. Each of a second section of the second and the fourth quadrant loops are coupled to a third section of the diagonal quadrant loop, and to the second section of a former quadrant loop. A first section of a third quadrant loop is coupled to a first section of the fourth quadrant loop, and to a third section of the first quadrant loop. The second section of the third quadrant loop is coupled to a second section of the fourth quadrant loop and to a third section of the third quadrant loop, and to a third section of the first quadrant loop.Type: ApplicationFiled: December 15, 2021Publication date: June 30, 2022Inventors: CHENG-WEI LUO, CHIEH-PIN CHANG, KAI-YI HUANG, TA-HSUN YEH
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Publication number: 20220077083Abstract: A semiconductor structure includes a first inductor, a second inductor, and a first input/output (I/O) pad. The first I/O pad is coupled to the first inductor and the second inductor. The first I/O pad, a first central axis of a first magnetic field of the first inductor, and a second central axis of a second magnetic field of the second inductor are disposed sequentially along a first direction.Type: ApplicationFiled: March 31, 2021Publication date: March 10, 2022Inventors: CHENG-WEI LUO, CHIEH-PIN CHANG, KAI-YI HUANG, TA-HSUN YEH
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Patent number: 11107917Abstract: A high voltage semiconductor device includes a semiconductor substrate, a first doped well, a second doped well, a mixed doped well, and a gate structure. The first, the second, and the mixed doped wells are disposed in the semiconductor substrate. At least a part of the first doped well and at least a part of the second doped well are located at two opposites sides of the gate structure in a horizontal direction respectively. The mixed doped well are located between the first doped well and the second doped well. The first and the second doped well include a first conductivity type dopant and a second conductivity type dopant respectively. The mixed doped well includes a mixed dopant. A part of the mixed dopant is identical to the first conductivity type dopant, and another part of the mixed dopant is identical to the second conductivity type dopant.Type: GrantFiled: January 16, 2020Date of Patent: August 31, 2021Assignee: Realtek Semiconductor Corp.Inventors: I-Jhen Hsu, Chih-Hua Liu, Kai-Yi Huang, Ta-Hsun Yeh
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Publication number: 20210217695Abstract: An integrated circuit is provided. The integrated circuit includes a first trace, a second trace and a third trace. The first trace, the second trace and the third trace are each a continuous trace. The first trace, the second trace and the third trace together use only two conductor layers of a semiconductor structure. In a crossing area of the first trace, the second trace and the third trace, the first trace crosses the second trace once, the first trace crosses the third trace once, and the second trace crosses the third trace once.Type: ApplicationFiled: January 8, 2021Publication date: July 15, 2021Inventors: CHENG-WEI LUO, CHIEH-PIN CHANG, KAI-YI HUANG, TA-HSUN YEH
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Publication number: 20210202687Abstract: An integrated inductor is provided. The integrated inductor includes a first winding and a second winding, and has a first end, a second end, and a node. The first winding utilizes the first end and the node as two ends thereof and includes a first coil and a second coil, which do not overlap. The second winding utilizes the second end and the node as two ends thereof and includes a third coil and a fourth coil, which do not overlap. The first coil and the third coil have an overlapping area, and the second coil and the fourth coil have an overlapping area. The first coil is surrounded by the third coil, and the fourth coil is surrounded by the second coil.Type: ApplicationFiled: December 28, 2020Publication date: July 1, 2021Inventors: CHENG-WEI LUO, CHIEH-PIN CHANG, KAI-YI HUANG, TA-HSUN YEH
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Publication number: 20210193367Abstract: An integrated stack transformer is provided, wherein the integrated stack transformer includes a first winding, a second winding and a third winding implemented by a first metal layer, and a fourth winding and a fifth winding implemented by a second metal layer. The second winding is positioned between the first winding and the third winding, the fourth winding substantially overlaps the first winding, the fifth winding substantially overlaps the third winding, and a distance between the fifth winding and the fourth winding is less than a distance between the third winding and the first winding. The first winding, the third winding, the fourth winding and the fifth winding form a part of one of a primary inductor and a secondary inductor of the integrated stack transformer, and the second winding is a part of the other of the primary inductor and the secondary inductor.Type: ApplicationFiled: December 8, 2020Publication date: June 24, 2021Inventors: Kai-Yi Huang, Cheng-Wei Luo, Chieh-Pin Chang, Ta-Hsun Yeh
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Publication number: 20210090775Abstract: Inductor device includes first and a second coils. First coil is wound into plural first circles. Second coil is wound into plural second circles. First connection member is coupled to first circle between outermost and innermost sides among first circles located at first area and first circle on outermost side among first circles located at second area. Second connection member is coupled to second circle on outermost side among second circles located at first area and second circle between outermost and innermost sides among second circles located at second area. At least two first circles of first circles are located at first area, and half of first circle of first circles is located at second area. Half of second circle of second circles is located at first area, and at least two second circles of second circles are located at second area.Type: ApplicationFiled: September 17, 2020Publication date: March 25, 2021Inventors: Chieh-Pin CHANG, Cheng-Wei LUO, Kai-Yi HUANG, Ta-Hsun YEH
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Publication number: 20210090782Abstract: An inductor device includes a first coil and a second coil. The first coil includes a first connection member and a plurality of first circles. At least two first circles of the first circles are located at a first area, and half of the first circle of the first circles is located at a second area. The second coil includes a second connection member and a plurality of second circles. At least two second circles of the second circles are located at the second area, and half of the second circle of the second circles is located at the first area. The first connection member is coupled to the at least two first circles and the half of the first circle. The second connection member is coupled to the at least two second circles and the half of the second circle.Type: ApplicationFiled: September 17, 2020Publication date: March 25, 2021Inventors: Cheng-Wei LUO, Chieh-Pin CHANG, Kai-Yi HUANG, Ta-Hsun YEH
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Publication number: 20210083109Abstract: A high voltage semiconductor device includes a semiconductor substrate, a first doped well, a second doped well, a mixed doped well, and a gate structure. The first, the second, and the mixed doped wells are disposed in the semiconductor substrate. At least a part of the first doped well and at least a part of the second doped well are located at two opposites sides of the gate structure in a horizontal direction respectively. The mixed doped well are located between the first doped well and the second doped well. The first and the second doped well include a first conductivity type dopant and a second conductivity type dopant respectively. The mixed doped well includes a mixed dopant. A part of the mixed dopant is identical to the first conductivity type dopant, and another part of the mixed dopant is identical to the second conductivity type dopant.Type: ApplicationFiled: January 16, 2020Publication date: March 18, 2021Inventors: I-Jhen Hsu, Chih-Hua Liu, Kai-Yi Huang, Ta-Hsun Yeh
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Publication number: 20210050147Abstract: An inductor structure includes a first curve metal component, a second curve metal component, a connection component, and a capacitor. The first and the second curve metal components are disposed on a layer. The layer is located at a first plane, the first and the second curve metal components are located at a second plane. The connection component is coupled to the first curve metal component and the second curve metal component. A first terminal of the connection component is coupled to a first terminal of the first curve metal component. A second terminal of the connection component is coupled to a first terminal of the second curve metal component. A first terminal of the capacitor is coupled to a second terminal of the first curve metal component. A second terminal of the capacitor is coupled to a second terminal of the second curve metal component.Type: ApplicationFiled: November 2, 2020Publication date: February 18, 2021Inventors: Hsiao-Tsung YEN, Chih-Yu TSAI, Kai-Yi HUANG
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Publication number: 20200395166Abstract: An inductor device includes a first coil and a second coil. The first coil is wound into a plurality of first circles, and the second coil is wound into a plurality of second circles. At least two of the second circles are interlaced with at least two of the first circles on a first side. The at least two of the second circles are disposed adjacent to each other on the first side. At least one of the first circles is only interlaced with at least one of the second circles on a second side. At least another one of the first circles is only interlaced with at least another one of the second circles on the second side.Type: ApplicationFiled: June 3, 2020Publication date: December 17, 2020Inventors: CHIEH-PIN CHANG, CHENG-WEI LUO, KAI-YI HUANG, TA-HSUN YEH