Abstract: An image segmentation method includes the following steps: obtaining a target image; inputting the target image into a machine learning model to obtain an image segmentation parameter value corresponding to the target image; executing an image segmentation algorithm on the target image according to the image segmentation parameter value to obtain an image segmentation result, wherein the image segmentation result is segmenting the target image into object regions; and displaying the image segmentation result. In addition, an electronic device and storage medium using the method are also provided.

Abstract: An interactive image marking method is introduced. The interactive image marking method includes the following steps, displaying a target image and at least one marked region in the target image; receiving an interactive signal, where the interactive signal corresponds to a first pixel of the target image; calculating a correlation between the first pixel and pixels of the target image, and determining a correlation range in the target image according to the correlation; editing the marked region according to the correlate range; and displaying the edited marked region. In addition, an electronic device and a recording medium using the method are also introduced.

Abstract: An interactive image marking method is introduced. The interactive image marking method includes the following steps, displaying a target image and at least one marked region in the target image; receiving an interactive signal, where the interactive signal corresponds to a first pixel of the target image; calculating a correlation between the first pixel and pixels of the target image, and determining a correlation range in the target image according to the correlation; editing the marked region according to the correlate range; and displaying the edited marked region. In addition, an electronic device and a recording medium using the method are also introduced.

Abstract: An image segmentation method includes the following steps: obtaining a target image; inputting the target image into a machine learning model to obtain an image segmentation parameter value corresponding to the target image; executing an image segmentation algorithm on the target image according to the image segmentation parameter value to obtain an image segmentation result, wherein the image segmentation result is segmenting the target image into object regions; and displaying the image segmentation result. In addition, an electronic device and storage medium using the method are also provided.

Abstract: A trace structure of fine-pitch pattern includes a connection portion, a first conductive wire portion and a second conductive wire portion, the first conductive wire portion comprises a first section and a second section connected to the first section, the first section connects to the connection portion, the second conductive wire portion comprises a third section and a fourth section connected to the third section, the third section connects to the connection portion, wherein an etching space closed on three sides is formed by the connection portion, the third section and the first section, a first spacing is defined between the third section and the first section, a second spacing is defined between the fourth section and the second section, wherein the first spacing is larger than the second spacing so as to make an metal layer within the etching space completely removed to avoid metal layer residues.

Abstract: A semiconductor manufacturing process includes the following steps of providing a silicon substrate having at least one connection pad and a protection layer, forming a first seed layer having at least one first section and at least one second section, forming a first photoresist layer, forming a first buffer layer having a coupling portion and a cladding portion, removing the first photoresist layer, removing the second section of the first seed layer to form a first under bump metallurgy layer, forming a support layer on the protection layer and the first buffer layer, the first under bump metallurgy layer has a first ring wall, the first buffer layer has a second ring wall, wherein the first ring wall, the second ring wall and the cladding portion are cladded by the support layer, and forming a connection portion and covering the coupling portion with the connection portion.

Abstract: A semiconductor manufacturing process includes the following steps of providing a silicon substrate having at least one connection pad and a protection layer, forming a first seed layer having at least one first section and at least one second section, forming a first photoresist layer, forming a first buffer layer having a coupling portion and a cladding portion, removing the first photoresist layer, removing the second section of the first seed layer to form a first under bump metallurgy layer, forming a support layer on the protection layer and the first buffer layer, the first under bump metallurgy layer has a first ring wall, the first buffer layer has a second ring wall, wherein the first ring wall, the second ring wall and the cladding portion are cladded by the support layer, and forming a connection portion and covering the coupling portion with the connection portion.

Abstract: A semiconductor manufacturing process includes the following steps of providing a silicon substrate having at least one connection pad and a protection layer, forming a first seed layer having at least one first section and at least one second section, forming a first photoresist layer, forming a first buffer layer having a coupling portion and a cladding portion, removing the first photoresist layer, removing the second section of the first seed layer to form a first under bump metallurgy layer, forming a support layer on the protection layer and the first buffer layer, the first under bump metallurgy layer has a first ring wall, the first buffer layer has a second ring wall, wherein the first ring wall, the second ring wall and the cladding portion are cladded by the support layer, and forming a connection portion and covering the coupling portion with the connection portion.

Abstract: The invention, firstly, SnCl4 and SbCl3 are collected as raw materials and all dissolved into water and hydrochloric acid with precipitation. Secondly, NaOH or NH40H can be used for adjusting the pH value. Then, aging, water-washing, filtering and drying process are all carried out. The additive also can be put into and sintering process is applied. Furthermore, washing and drying process are used for obtaining the crystalline nano-level acicular ATO composition powder.