Abstract: A Schottky diode with high antistatic capability has an N? type doped drift layer formed on an N+ type doped layer. The N? type doped drift layer has a surface formed with a protection ring. Inside the protection ring is a P-type doped area. The N? type doped drift layer surface is further formed with an oxide layer and a metal layer. The contact region between the metal layer and the N? type doped drift layer and the P-type doped area forms a Schottky contact. The P-type doped area has a low-concentration lower layer and a high-concentration upper layer, so that the surface ion concentration is high in the P-type doped area. The Schottky diode thus has such advantages of lowered forward voltage drop and high antistatic capability.

Abstract: A Schottky diode with a low forward voltage drop has an N? type doped drift layer formed on an N+ type doped layer. The N? type doped drift layer has a first surface with a protection ring inside which is a P-type doped area. The N? type doped drift layer surface is further formed with an oxide layer and a metal layer. The contact region between the metal layer and the N? type doped drift layer and the P-type doped area forms a Schottky barrier. The height of the Schottky barrier is lower than the surface of the N? type doped drift layer, thereby reducing the thickness of the N? type doped drift layer under the Schottky barrier. This configuration reduces the forward voltage drop of the Schottky barrier.

Abstract: A Schottky diode with high antistatic capability has an N? type doped drift layer formed on an N+ type doped layer. The N? type doped drift layer has a surface formed with a protection ring. Inside the protection ring is a P-type doped area. The N? type doped drift layer surface is further formed with an oxide layer and a metal layer. The contact region between the metal layer and the N? type doped drift layer and the P-type doped area forms a Schottky contact. The P-type doped area has a low-concentration lower layer and a high-concentration upper layer, so that the surface ion concentration is high in the P-type doped area. The Schottky diode thus has such advantages of lowered forward voltage drop and high antistatic capability.

Abstract: A Schottky diode structure with low reverse leakage current and low forward voltage drop has a first conductive material semiconductor substrate combined with a metal layer. An oxide layer is formed around the edge of the combined conductive material semiconductor substrate and the metal layer. A plurality of dot-shaped or line-shaped second conductive material regions are formed on the surface of the first conductive material semiconductor substrate connecting to the metal layer. The second conductive material regions form depletion regions in the first conductive material semiconductor substrate. The depletion regions can reduce the leakage current area of the Schottky diode, thereby reducing the reverse leakage current and the forward voltage drop. When the first conductive material is a P-type semiconductor, the second conductive material is an N-type semiconductor. When the first conductive material is an N-type semiconductor, the second conductive material is a P-type semiconductor.