Abstract: The present invention provides a method for preparing a gallium oxide semiconductor structure and a gallium oxide semiconductor structure obtained thereby.

Abstract: Provided are an asphalt-like material and a method and use thereof as a plugging agent, and a water-based drilling fluid. The asphalt-like material has a structure shown in formula I, wherein, in the formula I, R1 is selected from the group consisting of —H, —COOH, and —CH2—COOH; R2 is selected from the group consisting of —NH—CH2—CH2—OH, —NH—CH2—CH2—NH2, —N—(CH2—CH2—OH)2, and —NH—CH2—CH2—CH2—OH; R3 is selected from the group consisting of —OH, —NH—CH2—CH2—OH, —NH—CH2—CH2—NH2, —N—(CH2—CH2—OH)2, and —NH—CH2—CH2—CH2—OH; R4 is selected from the group consisting of —NH—CH2—CH2—OH, —NH—CH2—CH2—NH2, —N—(CH2—CH2—OH)2, and —NH—CH2—CH2—CH2—OH; and n is 370 to 400.

Abstract: An identity certificate may be issued to a blockchain node. The issuance may include issuing a first identity certificate to a first terminal and receiving a second identity certificate issuance request that is from the first terminal. A second identity certificate may be issued to the first terminal, and a third identity certificate issuance request is received from the second terminal. A third identity certificate is issued to the second terminal, so that the second terminal forwards the third identity certificate to the third terminal.

Abstract: Trenches in which to form a back side isolation structure for an array of CMOS image sensors are formed by a cyclic process that allows the trenches to be kept narrow. Each cycle of the process includes etching to add a depth segment to the trenches and coating the depth segment with an etch-resistant coating. The following etch step will break through the etch-resistant coating at the bottom of the trench but the etch-resistant coating will remain in the upper part of the trench to limit lateral etching and substrate damage. The resulting trenches have a series of vertically spaced nodes. The process may result in a 10% increase in photodiode area and a 30-40% increase in full well capacity.

Abstract: A method and system for quick selection by an intelligent terminal, and an intelligent terminal are provided. The method includes receiving a multi-selection instruction of a user to enter a multi-selection mode, and selecting at least one entry according to the selection of the user; receiving a touch instruction of the user, and obtaining the position of a touch point; and marking all the entries between an entry where the touch point is located and the selected entry as being in a selected state. No need for carrying out a selection operation on entries one by one is realized, thereby being convenient and quick, and not being prone to errors.

Abstract: Disclosed in the present invention are a method and system for quick selection by an intelligent terminal, and an intelligent terminal. The method comprises: an intelligent terminal receiving a multi-selection instruction of a user to enter a multi-selection mode, and selecting at least one entry according to the selection of the user; the intelligent terminal receiving a touch instruction of the user, and obtaining the position of a touch point; and marking all the entries between an entry where the touch point is located and the selected entry as being in a selected state. According to the present invention, no need for carrying out a selection operation on entries one by one is realized, thereby being convenient and quick, and not being prone to errors.