Abstract: A memory management method, a memory storage device, and a memory control circuit unit are provided. The memory management method includes: storing first management information in a rewritable non-volatile memory module, wherein the first management information reflects a storage status of abnormal data in a first physical unit in the rewritable non-volatile memory module; receiving a read command from a host system, wherein the read command instructs to read data stored in a logical unit corresponding to a physical node in the first physical unit; inquiring the first management information according to the read command; transmitting data read from the physical node to the host system if an inquiring result reflects that the abnormal data is not stored in the physical node; and transmitting error information to the host system if the inquiring result reflects that the abnormal data is stored in the physical node.

Abstract: A memory management method, a memory storage device, and a memory control circuit unit are provided. The memory management method includes: storing first management information in a rewritable non-volatile memory module, wherein the first management information reflects a storage status of abnormal data in a first physical unit in the rewritable non-volatile memory module; receiving a read command from a host system, wherein the read command instructs to read data stored in a logical unit corresponding to a physical node in the first physical unit; inquiring the first management information according to the read command; transmitting data read from the physical node to the host system if an inquiring result reflects that the abnormal data is not stored in the physical node; and transmitting error information to the host system if the inquiring result reflects that the abnormal data is stored in the physical node.

Abstract: A data arrangement method of a flash memory, a flash memory storage device, and a flash memory control circuit unit are provided. The method may be applied to a flash memory, an embedded memory device, or a solid-state disk having a three-dimensional (3D) structure. The method includes: executing a background garbage collection operation in a background mode; receiving at least one write command from a host when the background garbage collection operation is not completed to suspend the background garbage collection operation and exit the background mode; executing the at least one write command; and entering the background mode and continuing the execution of the background garbage collection operation after the at least one write command is completed. Therefore, execution efficiency of the write command in a foreground mode may be optimized.

Abstract: A memory management method, a memory storage device and a memory control circuit unit are disclosed. The method includes: receiving a first write command from a host system; instructing a rewritable non-volatile memory module to perform a first write operation according to the first write command; obtaining first performance information corresponding to the first write operation; and updating threshold information according to the first performance information, wherein the threshold information is configured to determine a type of target data.

Abstract: A data arrangement method of a flash memory, a flash memory storage device, and a flash memory control circuit unit are provided. The method may be applied to a flash memory, an embedded memory device, or a solid-state disk having a three-dimensional (3D) structure. The method includes: executing a background garbage collection operation in a background mode; receiving at least one write command from a host when the background garbage collection operation is not completed to suspend the background garbage collection operation and exit the background mode; executing the at least one write command; and entering the background mode and continuing the execution of the background garbage collection operation after the at least one write command is completed. Therefore, execution efficiency of the write command in a foreground mode may be optimized.

Abstract: A memory management method, a memory storage device and a memory control circuit unit are disclosed. The method includes: receiving a first write command from a host system; instructing a rewritable non-volatile memory module to perform a first write operation according to the first write command; obtaining first performance information corresponding to the first write operation; and updating threshold information according to the first performance information, wherein the threshold information is configured to determine a type of target data.