Patents by Inventor Kaifu Qiu

Kaifu Qiu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250151454
    Abstract: A cell assembly includes a silicon substrate; a first doped region and a second doped region, having opposite polarities. The first doped region is an N-type doped region; the first doped region includes a first doped layer, a passivation layer, and a second doped layer; the passivation layer of the first doped region is provided on the first doped layer of the first doped region; and a conductive channel is formed in the passivation layer of the first doped region.
    Type: Application
    Filed: January 13, 2025
    Publication date: May 8, 2025
    Inventors: Gang CHEN, Wenli XU, Kaifu QIU, Yongqian WANG, Xinqiang YANG
  • Patent number: 12218258
    Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.
    Type: Grant
    Filed: April 25, 2024
    Date of Patent: February 4, 2025
    Assignee: Solarlab Aiko Europe GmbH
    Inventors: Gang Chen, Wenli Xu, Kaifu Qiu, Yongqian Wang, Xinqiang Yang
  • Patent number: 12211950
    Abstract: The disclosure provides a solar cell and a back contact structure thereof, a photovoltaic module, and a photovoltaic system. The back contact structure includes a first doped region having an opposite polarity to a silicon substrate and a second doped region having a same polarity as the silicon substrate. An isolation region is arranged between the first doped region and the second doped region. The protective region arranged on the first doped region includes an insulation layer and a third doped layer having a same polarity as the second doped region. An opening is provided in the protective region to connect the first conductive layer to the first doped region. In the present invention, scratches caused by belt transmission in an existing cell fabrication process is resolved.
    Type: Grant
    Filed: July 11, 2022
    Date of Patent: January 28, 2025
    Assignee: SOLARLAB AIKO EUROPE GMBH
    Inventors: Gang Chen, Wenli Xu, Kaifu Qiu, Yongqian Wang, Xinqiang Yang
  • Publication number: 20250015220
    Abstract: A layered structure is provided for a solar cell having tunnel-oxide-passivated contacts. The layered structure includes at least one tunnel oxide layer and a ?c-SiCx layer, wherein x?0.5. A solar cell having tunnel-oxide-passivated contacts is also provided. The solar cell includes at least one crystalline n-doped or p-doped silicon layer, and the layered structure having the tunnel-oxide passivated contacts. A method for producing a layered structure for a solar cell having tunnel-oxide-passivated contacts is additionally provided. The method includes providing a substrate layer comprising a silicon layer, depositing a tunnel oxide layer on the substrate layer, and depositing a u c-SiCx:H layer, which is n-doped or p-doped, on the tunnel oxide layer.
    Type: Application
    Filed: December 15, 2021
    Publication date: January 9, 2025
    Inventors: Kaining DING, Manuel POMASKA, Kaifu QIU
  • Publication number: 20240363789
    Abstract: A solar cell includes a silicon substrate, a first doped region, and a second doped region. The first doped region includes a first passivated contact region on the silicon substrate and a second passivated contact region on the first passivated contact region. The first passivated contact region includes a first doped layer, a first passivation layer, and a second doped layer. The second passivated contact region includes a second passivation layer and a third doped layer. The second doped region includes a third passivation layer. Each of the first and third passivation layers includes a porous structure. One of the first and second doped regions is a P-type doped region, the other of the first and second doped regions is an N-type doped region, and a hole density of a corresponding passivation layer in the P-type doped region is greater than that in the N-type doped region.
    Type: Application
    Filed: July 5, 2024
    Publication date: October 31, 2024
    Inventors: Gang CHEN, Wenli XU, Kaifu QIU, Yongqian WANG, Xinqiang YANG
  • Publication number: 20240363790
    Abstract: A solar cell includes a silicon substrate, a first doped region, and a second doped region. The first doped region includes a first passivated contact region on the silicon substrate and a second passivated contact region on the first passivated contact region. The first passivated contact region includes a first doped layer, a first passivation layer, and a second doped layer. The second passivated contact region includes a second passivation layer and a third doped layer. The second doped region includes a third passivation layer. Each of the first and third passivation layers includes a porous structure. One of the first and second doped regions is a P-type doped region, the other of the first and second doped regions is an N-type doped region, and a hole density of a corresponding passivation layer in the P-type doped region is greater than that in the N-type doped region.
    Type: Application
    Filed: July 8, 2024
    Publication date: October 31, 2024
    Inventors: Gang CHEN, Wenli XU, Kaifu QIU, Yongqian WANG, Xinqiang YANG
  • Publication number: 20240290905
    Abstract: A solar cell includes a silicon substrate, a first doped region, and a second doped region. The first doped region includes a first passivated contact region on the silicon substrate and a second passivated contact region on the first passivated contact region. The first passivated contact region includes a first doped layer, a first passivation layer, and a second doped layer. The second passivated contact region includes a second passivation layer and a third doped layer. The second doped region includes a third passivation layer. Each of the first and third passivation layers includes a porous structure. One of the first and second doped regions is a P-type doped region, the other of the first and second doped regions is an N-type doped region, and a hole density of a corresponding passivation layer in the P-type doped region is greater than that in the N-type doped region.
    Type: Application
    Filed: May 8, 2024
    Publication date: August 29, 2024
    Inventors: Gang CHEN, Wenli XU, Kaifu QIU, Yongqian WANG, Xinqiang YANG
  • Publication number: 20240274729
    Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.
    Type: Application
    Filed: April 25, 2024
    Publication date: August 15, 2024
    Inventors: Gang CHEN, Wenli XU, Kaifu QIU, Yongqian WANG, Xinqiang YANG
  • Publication number: 20240204115
    Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.
    Type: Application
    Filed: January 22, 2024
    Publication date: June 20, 2024
    Applicant: Solarlab Aiko Europe GmbH
    Inventors: Gang Chen, Wenli Xu, Kaifu Qiu, Yongqian Wang, Xinqiang Yang
  • Patent number: 12009440
    Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.
    Type: Grant
    Filed: September 29, 2023
    Date of Patent: June 11, 2024
    Assignee: Solarlab Aiko Europe GmbH
    Inventors: Gang Chen, Wenli Xu, Kaifu Qiu, Yongqian Wang, Xinqiang Yang
  • Publication number: 20240021741
    Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.
    Type: Application
    Filed: September 29, 2023
    Publication date: January 18, 2024
    Inventors: Gang CHEN, Wenli XU, Kaifu QIU, Yongqian WANG, Xinqiang YANG
  • Patent number: 11837671
    Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.
    Type: Grant
    Filed: February 17, 2023
    Date of Patent: December 5, 2023
    Assignee: SOLARLAB AIKO EUROPE GMBH
    Inventors: Gang Chen, Wenli Xu, Kaifu Qiu, Yongqian Wang, Xinqiang Yang
  • Publication number: 20230317866
    Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.
    Type: Application
    Filed: June 7, 2023
    Publication date: October 5, 2023
    Inventors: Gang CHEN, Wenli XU, Kaifu QIU, Yongqian WANG, Xinqiang YANG
  • Patent number: 11777045
    Abstract: A back contact structure includes: a silicon substrate including a back surface including a plurality of recesses disposed at intervals; a first dielectric layer disposed on the back surface of the silicon substrate; a plurality of first doped regions disposed on the first dielectric layer and disposed inside the plurality of recesses; a plurality of second doped regions disposed on the first dielectric layer and disposed outside the plurality of recesses; a second dielectric layer disposed between the first doped regions and the second doped regions; and a conductive layer disposed on the first plurality of doped regions and the plurality of second doped regions.
    Type: Grant
    Filed: December 3, 2021
    Date of Patent: October 3, 2023
    Assignee: SOLARLAB AIKO EUROPE GMBH
    Inventors: Kaifu Qiu, Yongqian Wang, Xinqiang Yang, Gang Chen
  • Patent number: 11764316
    Abstract: A back contact structure includes: a silicon substrate including a back surface including a plurality of recesses disposed at intervals; a plurality of first conductive regions and a plurality of second conductive regions disposed alternately on the back surface of the silicon substrate; a second dielectric layer disposed between the plurality of first conductive regions and the plurality of second conductive regions; and a conductive layer disposed on the plurality of first conductive regions and the plurality of second conductive regions. One of the plurality of first conductive regions and the plurality of second conductive regions is disposed inside the plurality of recesses, respectively, and the other one is disposed outside the plurality of recesses; each first conductive region includes a first dielectric layer and a first doped region which are disposed successively, and each second conductive region includes a second doped region.
    Type: Grant
    Filed: December 2, 2021
    Date of Patent: September 19, 2023
    Assignee: SOLARLAB AIKO EUROPE GMBH
    Inventors: Kaifu Qiu, Yongqian Wang, Xinqiang Yang, Gang Chen
  • Patent number: 11749761
    Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.
    Type: Grant
    Filed: October 24, 2021
    Date of Patent: September 5, 2023
    Assignee: SOLARLAB AIKO EUROPE GMBH
    Inventors: Gang Chen, Wenli Xu, Kaifu Qiu, Yongqian Wang, Xinqiang Yang
  • Patent number: 11695087
    Abstract: A back contact structure of a solar cell, includes: a silicon substrate, the silicon substrate including a back surface including a plurality of recesses disposed at intervals; a plurality of first conductive regions and a plurality of second conductive regions disposed alternately in the plurality of recesses, where each first conductive region includes a first dielectric layer and a first doped region which are disposed successively in the plurality of recesses, and each second conductive region includes a second doped region; a second dielectric layer disposed between the plurality of first conductive regions and the plurality of second conductive regions; and a conductive layer disposed on the plurality of first conductive regions and the plurality of second conductive regions.
    Type: Grant
    Filed: December 3, 2021
    Date of Patent: July 4, 2023
    Assignee: SOLARLAB AIKO EUROPE GMBH
    Inventors: Kaifu Qiu, Yongqian Wang, Xinqiang Yang, Gang Chen
  • Publication number: 20230197865
    Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.
    Type: Application
    Filed: February 17, 2023
    Publication date: June 22, 2023
    Inventors: Gang CHEN, Wenli XU, Kaifu QIU, Yongqian WANG, Xinqiang YANG
  • Publication number: 20230027079
    Abstract: The disclosure provides a solar cell and a back contact structure thereof, a photovoltaic module, and a photovoltaic system. The back contact structure includes a first doped region having an opposite polarity to a silicon substrate and a second doped region having a same polarity as the silicon substrate. An isolation region is arranged between the first doped region and the second doped region. The protective region arranged on the first doped region includes an insulation layer and a third doped layer having a same polarity as the second doped region. An opening is provided in the protective region to connect the first conductive layer to the first doped region. In the present invention, scratches caused by belt transmission in an existing cell fabrication process is resolved.
    Type: Application
    Filed: July 11, 2022
    Publication date: January 26, 2023
    Inventors: Gang CHEN, Wenli XU, Kaifu QIU, Yongqian WANG, Xinqiang YANG
  • Publication number: 20230027636
    Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.
    Type: Application
    Filed: October 24, 2021
    Publication date: January 26, 2023
    Inventors: Gang CHEN, Wenli XU, Kaifu QIU, Yongqian WANG, Xinqiang YANG