Abstract: Display artifacts, such as muras, may be perceptible on an electronic display when an electronic device includes a radio frequency transceiver that outputs electromagnetic waves during an emission period and a display panel that writes to display pixels during a refresh period. The electronic device may also include a controller that is coupled to the radio frequency transceiver and the display panel and facilitates the reduction and/or elimination of overlap between the emission periods and the refresh periods to decrease the appearance of display artifacts. In particular, the controller may execute instructions to determine the duration of the emission period and determine the duration of the blanking period that occurs between the refresh periods.

Abstract: Display artifacts, such as muras, may be perceptible on an electronic display when an electronic device includes a radio frequency transceiver that outputs electromagnetic waves during an emission period and a display panel that writes to display pixels during a refresh period. The electronic device may also include a controller that is coupled to the radio frequency transceiver and the display panel and facilitates the reduction and/or elimination of overlap between the emission periods and the refresh periods to decrease the appearance of display artifacts. In particular, the controller may execute instructions to determine the duration of the emission period and determine the duration of the blanking period that occurs between the refresh periods.

Abstract: Disclosed herein is an aqueous alkaline etching solution comprising water and an alkaline material being selected from the group consisting of ammonium hydroxide, ammonium phosphate, ammonium carbonate, quaternary ammonium hydroxide, quaternary ammonium phosphate, quaternary ammonium carbonate, an alkali metal hydroxide, an alkaline earth metal hydroxide, or a combination comprising at least one of the foregoing alkaline materials; the aqueous alkaline solution being operative to etch aluminum oxide at a rate greater than or equal to about 2:1 over a rate at which it etches a metal oxide semiconductor to be protected; wherein the aqueous etching solution has a pH of 8 to 13.

Abstract: Disclosed herein is an aqueous alkaline etching solution comprising water and an alkaline material being selected from the group consisting of ammonium hydroxide, ammonium phosphate, ammonium carbonate, quaternary ammonium hydroxide, quaternary ammonium phosphate, quaternary ammonium carbonate, an alkali metal hydroxide, an alkaline earth metal hydroxide, or a combination comprising at least one of the foregoing alkaline materials; the aqueous alkaline solution being operative to etch aluminum oxide at a rate greater than or equal to about 2:1 over a rate at which it etches a metal oxide semiconductor to be protected; wherein the aqueous etching solution has a pH of 8 to 13.