Abstract: A semiconductor storage device includes a substrate having a surface, a first conductive layer 25 disposed on a substrate and extending in an X direction parallel to the surface of the substrate; a second conductive layer 25 that disposed on the first conductive layer 25 and extending in the X direction; an insulation plug 30 disposed on the substrate, extends in a Z direction intersecting with the X direction, and intersects with the first conductive layer 25; and a contact plug CC disposed on the first insulation plug 30, extends in the Z direction, and intersects with the second conductive layer 25.

Abstract: A semiconductor storage device includes a substrate having a surface, a first conductive layer 25 disposed on a substrate and extending in an X direction parallel to the surface of the substrate; a second conductive layer 25 that disposed on the first conductive layer 25 and extending in the X direction; an insulation plug 30 disposed on the substrate, extends in a Z direction intersecting with the X direction, and intersects with the first conductive layer 25; and a contact plug CC disposed on the first insulation plug 30, extends in the Z direction, and intersects with the second conductive layer 25.

Abstract: A semiconductor storage device includes a substrate having a surface, a first conductive layer 25 disposed on a substrate and extending in an X direction parallel to the surface of the substrate; a second conductive layer 25 that disposed on the first conductive layer 25 and extending in the X direction; an insulation plug 30 disposed on the substrate, extends in a Z direction intersecting with the X direction, and intersects with the first conductive layer 25; and a contact plug CC disposed on the first insulation plug 30, extends in the Z direction, and intersects with the second conductive layer 25.